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| Power F-MOS FETs 2SK2032 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 200mJ q VGSS = 30V guaranteed q High-speed switching: tf = 90ns q No secondary breakdown unit: mm 15.00.3 11.00.2 5.00.2 3.2 0.7 16.20.5 12.5 3.5 Solder Dip q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 21.00.5 15.00.2 s Applications 3.20.1 2.00.2 2.00.1 1.10.1 5.450.3 0.60.2 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS*1 P D* 2 PD *3 10.90.5 Ratings 450 30 13 26 200 100 3 150 -55 to +150 Unit V V A A mJ W W C C 1 2 3 1: Gate 2: Drain 3: Source TOP-3 Full Pack Package (a) Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature *1 TC = 25C Ta = 25C Tch Tstg *2 L = 5mH, IL = 9A, VDD = 50V, 1 pulse TC = 25C *3 Ta = 25C (Without heat sink) s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tf td(off) Rth(ch-c) Conditions VDS = 360V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 7A VDS = 25V, ID = 7A IDR = 13A, VGS = 0 1700 VDS = 20V, VGS = 0, f = 1MHz 300 120 VGS = 10V, ID = 7A VDD = 150V, RL = 21.4 110 90 220 1.25 5 450 2 0.34 8 -2 5 0.45 min typ max 0.1 1 Unit mA A V V S V pF pF pF ns ns ns C/W Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Fall time Turn-off time (delay time) Thermal resistance between channel and case 1 Power F-MOS FETs Area of safe operation (ASO) 100 30 10 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 1ms 10ms DC IDP ID 120 2SK2032 PD Ta Avalanche energy capacity EAS (mJ) Allowable power dissipation PD (W) (1) TC=Ta (2) Without heat sink (PD=3.0W) 300 VDD=50V ID=13A 250 EAS Tj Non repetitive pulse TC=25C t=100s 100 Drain current ID (A) 80 200 60 (1) 40 150 100 20 (2) 0 0 20 40 60 80 100 120 140 160 50 0 25 50 75 100 125 150 175 Drain to source voltage VDS (V) Ambient temperature Ta (C) Junction temperature Tj (C) ID VDS 16 14 12 6.0V 10 8 6 4 2 0 0 10 20 30 40 50 60 5.0V 100W 5.5V VGS=15V 10V 16 20 ID VGS 6 VDS=25V Vth TC VDS=25V ID=1mA 5 Gate threshold voltage Vth (V) 10 12 Drain current ID (A) Drain current ID (A) 12 TC=0C 25C 150C 100C 4 3 8 2 4 1 0 0 2 4 6 8 0 0 25 50 75 100 125 150 Drain to source voltage VDS (V) Gate to source voltage VGS (V) Case temperature TC (C) VDS VGS Drain to source ON-resistance RDS(on) () 40 TC=25C 1.2 RDS(on) ID 12 | Yfs | ID Forward transfer admittance |Yfs| (S) VGS=10V VDS=25V TC=25C 10 Drain to source voltage VDS (V) 35 30 25 20 15 10 5 3.25A 0 0 5 10 15 20 25 30 13A 6.5A ID=26A 1.0 0.8 TC=150C 0.6 8 100C 6 0.4 25C 0C 4 0.2 2 0 0 4 8 12 16 20 0 0 5 10 15 20 Gate to source voltage VGS (V) Drain current ID (A) Drain current ID (A) 2 Power F-MOS FETs Ciss, Coss, Crss VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 10000 f=1MHz TC=25C 2SK2032 VDS, VGS Qg 250 ID=13A VDS 20 300 td(on), tr, tf, td(off) ID VDD=150V VGS=10V TC=25C td(off) 200 Drain to source voltage VDS (V) Gate to source voltage VGS (V) 3000 1000 300 100 30 Switching time td(on),tr,tf,td(off) (ns) Ciss 200 16 250 150 12 Coss 150 100 Crss 10 3 1 0 50 100 150 200 250 VGS 8 100 tr tf 50 4 50 td(on) 0 0 2 4 6 8 10 12 14 16 0 0 20 40 60 80 100 0 120 Drain to source voltage VDS (V) Gate charge amount Qg (nC) Drain current ID (A) 3 |
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