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| Si4914BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) () 0.021 at VGS = 10 V 0.027 at VGS = 4.5 V 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V ID (A)a Qg (Typ.) 8.4 7.4 8d 8d 6.7 FEATURES * Halogen-free According to IEC 61249-2-21 Definition * LITTLE FOOT(R) Plus Integrated Schottky * 100 % Rg and UIS Tested * Compliant to RoHS Directive 2002/95/EC 7.0 APPLICATIONS * Notebook PC - System Power dc-to-dc IF (A) 2.0 D1 SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.50 V at 1.0 A SO-8 G1 D1 D1 G2 S2 1 2 3 4 Top View Ordering Information: SI4914BDY-T1-E3 (Lead (Pb)-free) Si4914BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 7 6 5 G1 S1/D2 S1/D2 S1/D2 G2 N-Channel 2 MOSFET S2 Schottky Diode N-Channel 1 MOSFET S1/D2 ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C Continuous Drain Current (TJ = 150 C)a, b TC = 70 C TA = 25 C TA = 70 C Pulsed Drain Current (10 s Pulse Width) Continuous Source-Drain Diode Current PulseD Source-Drain Current Single-Pulse Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH TC = 25 C Maximum Power Dissipationa, b TC = 70 C TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range Notes: a. Based on TC = 25 C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Package limited. Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 www.vishay.com 1 TJ, Tstg PD TC = 25 C TA = 25 C IDM IS ISM IAS EAS 2.7 1.7 1.7 b, c Symbol VDS VGS Channel-1 30 20 8.4 Channel-2 Unit V 8d 7.4 7.4b, c 5.7b, c 40 2.8 1.1b, c 40 15 11.2 3.1 2.0 2.0b, c 1.2b, c - 55 to 150 C W mJ A ID 6.7 6.7b, c 5.3b, c 40 2.4 1.0b, c 40 1.1b, c Si4914BDY Vishay Siliconix THERMAL RESISTANCE RATINGS Channel-1 Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) t 10 s Steady State Symbol RthJA RthJF Typ. 59 36 Max. 70 45 52 32 Channel-2 Typ. Max. 62.5 40 Unit C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 120 C/W for Channel 1 and 115 C/W for Channel 2. MOSFET SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 85 C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 8 A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 8 A VGS = 4.5 V, ID = 6 A VGS = 4.5 V, ID = 6 A Forward Transconductanceb Diode Forward Voltageb Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Qg Qgs Qgd Rg Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 8 A Ch-1 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 8 A Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 6.7 7.0 2.8 2.8 2.0 2.0 2.9 2.0 6.0 4.0 10.5 11.0 nC gfs VSD VDS = 15 V, ID = 8 A VDS = 15 V, ID = 8 A IS = 1.7 A, VGS = 0 V IS = 1 A, VGS = 0 V Ch-1 Ch-2 Ch-1 Ch-1 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 20 20 0.0165 0.0155 0.0215 0.020 29 33 0.77 0.46 1.1 0.5 0.021 0.020 0.027 0.025 S V 1.2 1.2 30 30 35 - 6.2 2.7 2.7 100 100 1 100 15 10000 A A nA V V mV/C Symbol Test Conditions Min. Typ.a Max. Unit www.vishay.com 2 Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 Si4914BDY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time td(on) tr td(off) tf trr Qrr ta tb Ch-1 Channel-1 VDD = 15 V, RL = 3 ID 5 A, VGEN = 10 V, Rg = 1 Channel-2 VDD = 15 V, RL = 3 ID 5 A, VGEN = 10 V, Rg = 1 IF = 2.2 A, dI/dt = 100 A/s IF = 2.2 A, dI/dt = 100 A/s IF = 2.2 A, dI/dt = 100 A/s IF = 2.2 A, dI/dt = 100 A/s IF = 2.2 A, dI/dt = 100 A/s IF = 2.2 A, dI/dt = 100 A/s IF = 2.2 A, dI/dt = 100 A/s IF = 2.2 A, dI/dt = 100 A/s Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 9 10 10 9 16 16 9 8 35 21 40 11 19 11 16 10 ns 18 20 20 18 32 32 18 16 55 35 nC ns Symbol Test Conditions Min. Typ.a Max. Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 www.vishay.com 3 Si4914BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 VGS = 10 V thru 5 V I D - Drain Current (A) 2.0 40 I D - Drain Current (A) 1.6 4V 30 1.2 TC = 25 C 0.8 20 10 3V 0 0 0.5 1.0 1.5 2.0 2.5 0.4 TC = 125 C 0 0 1 2 3 TJ = - 55 C 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.05 1000 Transfer Characteristics Ciss R DS(on) - On-Resistance () 0.04 C - Capacitance (pF) 800 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 600 400 200 Crss 0 6 Coss 0 0 10 20 30 40 50 0 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 8 A 8 VDS = 15 V 6 VDS = 20 V 4 R DS(on) - On-Resistance VDS = 10 V 1.5 1.7 ID = 7 A Capacitance VGS - Gate-to-Source Voltage (V) VGS = 10 V (Normalized) 1.3 VGS = 4.5 V 1.1 2 0.9 0 0 3.2 6.4 9.6 12.8 16.0 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 4 Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 Si4914BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 TJ = 150 C R DS(on) - On-Resistance () 10 IS - Source Current (A) TJ = 25 C 1 0.08 0.10 0.06 0.1 0.04 TA = 125 C 0.02 TA = 25 C 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.5 ID = 250 A 0.2 VGS(th) Variance (V) ID = 5 mA Power (W) - 0.1 60 80 100 On-Resistance vs. Gate-to-Source Voltage - 0.4 40 - 0.7 20 - 1.0 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (s) 1 10 TJ - Temperature (C) Threshold Voltage 100 Limited by R DS(on)* 10 I D - Drain Current (A) Single Pulse Power, Junction-to-Ambient 1 ms 1 10 ms 100 ms 0.1 TA = 25 C Single Pulse 0.01 0.1 1 10 1s 10 s DC 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 www.vishay.com 5 Si4914BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 8 I D - Drain Current (A) 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (C) Current Derating* 3.5 1.5 2.8 1.2 Power (W) Power (W) 2.1 0.9 1.4 0.6 0.7 0.3 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 TC - Case Temperature (C) TA - Ambient Temperature (C) Power, Junction-to-Foot Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 Si4914BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 PDM Notes: 0.05 t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 2. Per Unit Base = RthJA = 120 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 www.vishay.com 7 Si4914BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 VGS = 10 V thru 5 V 40 I D - Drain Current (A) 4V 30 I D - Drain Current (A) 1.6 2.0 1.2 TJ = 25 C 0.8 20 10 3V 0 0 0.5 1.0 1.5 2.0 2.5 0.4 TJ = 125 C TJ = - 55 C 0 0 1.2 2.4 3.6 4.8 6.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.040 1200 Transfer Characteristics Ciss R DS(on) - On-Resistance () 0.034 C - Capacitance (pF) 960 0.028 720 0.022 VGS = 4.5 V VGS = 10 V 480 Coss 240 Crss 0 6 12 18 24 30 0.016 0.010 0 10 20 30 40 50 0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 8 A 8 VDS = 15 V 6 VDS = 20 V 4 R DS(on) - On-Resistance VDS = 10 V 1.5 1.7 ID = 7.5 A Capacitance VGS - Gate-to-Source Voltage (V) VGS = 10 V (Normalized) 1.3 VGS = 4.5 V 1.1 2 0.9 0 0 3.4 6.8 10.2 13.6 17.0 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 8 Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 Si4914BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.10 10 R DS(on) - On-Resistance () 0.08 IS - Source Current (A) 0.06 1 TJ = 150 C TJ = 25 C 0.04 TA = 125 C 0.02 TA = 25 C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 10-1 VDS = 20 V 10-2 I R - Reverse (A) VDS = 30 V 80 100 On-Resistance vs. Gate-to-Source Voltage 10-4 VDS = 10 V Power (W) 10-3 60 40 10-5 20 10-6 0 25 50 75 100 125 150 TJ - Temperature (C) 0 0.001 0.01 0.1 Time (s) 1 10 Reverse Current Schottky 100 Limited by R DS(on)* 10 I D - Drain Current (A) Single Pulse Power, Junction-to-Ambient 1 ms 1 10 ms 100 ms 0.1 TA = 25 C Single Pulse 0.01 0.1 1 10 1s 10 s DC 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 www.vishay.com 9 Si4914BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 11.0 8.8 I D - Drain Current (A) Package Limited 6.6 4.4 2.2 0 0 25 50 75 100 125 150 TC - Case Temperature (C) Current Derating* 4.0 1.5 3.2 1.2 Power (W) Power (W) 2.4 0.9 1.6 0.6 0.8 0.3 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 TC - Case Temperature (C) TA - Ambient Temperature (C) Power, Junction-to-Foot Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 Si4914BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 PDM t1 Notes: 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 115 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69654. Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 www.vishay.com 11 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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