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| 7MBR50NE060 IGBT MODULE 600V / 50A / PIM IGBT Modules Features * High Speed Switching * Voltage Drive * Low Inductance Module Structure * Converter Diode Bridge Dynamic Brake Circuit Applications * Inverter for Motoe Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake Collector power disspation Repetitive peak reverse voltage Average forward current Surge current Repetitive peak reverse voltage Converter Symbol VCES VGES IC ICP -IC PC VCES VGES IC ICP PC VRRM IF(AV) IFSM 10ms Continuous 1ms 1 device 1 device Continuous 1ms Condition Ra ting 600 20 50 100 50 200 600 20 50 100 200 600 1 50 800 900 50 350 648 +150 -40 to +125 AC : 1 minute AC 2500 1.7 *1 Unit V V A A A W V V A A W V A A V V A A As C C V N*m Inverter VRRM Non-Repetitive peak reverse voltage VRSM Average output current IO Surge current (Non-Repetitive) IFSM It (Non-Repetitive) Tj Tstg Viso 50Hz/60Hz sine wave Tj=150C, 10ms Tj=150C, 10ms Operating junction temperature Storage temperature Isolation voltage Mounting screw torque *1 Recommendable value : 1.3 to 1.7 N*m (M4) IGBT Module Electrical characteristics (Tj=25C unless without specified) Item Zero gate voltage collector current Gate-Emitter leakage current Inverter (IGBT) Gate-Emitter threshold voltage Collector-Emitter saturation voltage Collector-Emitter voltage Input capacitance Switching time Symbol ICES IGES VGE(th) VCE(sat) -VCE Cies ton tr toff tf Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Brake (IGBT) Collector-Emitter saturation voltage Switching time trr ICES IGES VCE(sat) ton tr toff tf Brake (FWD) 7MBR50NE060 Condition Min. VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=50mA VGE=15V, Ic=50A -Ic=50A VGE=0V, VCE=10V, f=1MHz VCC=300V IC=50A VGE=15V RG=51 ohm IF=50A VCES=600V, VGE=0V VCE=0V, VGE=20V IC=50A, VGE=15V VCC=300V IC=50A VGE=15V RG=51ohm VR=600V IF=50A VR=800V 3300 1.2 0.6 1.0 0.35 0.3 1.0 0.1 2.8 0.8 0.6 1.0 0.35 1.0 0.6 1.55 1.0 Characteristics Typ. Max. 1.0 20 7.5 2.8 3.0 Unit mA A V V V pF s s s s s mA A V s s s s mA s V mA 4.5 Converter Reverse current Reverse recovery time Forward voltage Reverse current IRRM trr VFM IRRM Thermal Characteristics Item Symbol Condition Min. Inverter IGBT Inverter FRD Brake IGBT Converter Diode With thermal compound Characteristics Typ. Max. 0.63 1.60 0.63 2.10 0.05 Unit Thermal resistance ( 1 device ) Rth(j-c) C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic * NLU (Over current Limiting circuit) IGBT Module Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=25C 125 125 7MBR50NE060 Collector current vs. Collector-Emitter voltage Tj=125C 100 100 Collector current : Ic [A] Collector current : Ic [A] 0 1 2 3 4 5 75 75 50 50 25 25 0 Collector-Emitter voltage : VCE [V] 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25C Collector-Emitter vs. Gate-Emitter voltage Tj=125C 10 VCE [V] VCE [V] Collector-Emitter voltage : 0 5 10 15 20 25 10 8 8 Collector-Emitter voltage : 6 6 4 4 2 2 0 Gate-Emitter voltage : VGE [V] 0 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=300V, RG=51 ohm, VGE=15V, Tj=25C Switching time vs. Collector current Vcc=300V, RG=51 ohm, VGE=15V, Tj=125C 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] 1000 100 100 10 0 20 40 Collector current : Ic [A] 60 80 10 0 20 40 Collector current : Ic [A] 60 80 IGBT Module 7MBR50NE060 Switching time vs. RG Vcc=300V, Ic=50A, VGE=15V, Tj=25C 500 Dynamic input characteristics Tj=25C 25 Switching time : ton, tr, toff, tf [n sec.] Collector-Emitter voltage : VCE [V] 1000 400 20 300 15 100 200 10 100 5 10 10 Gate resistance : RG [ohm] 100 0 0 50 100 150 200 250 300 Gate charge : Qg [nC] 0 FWD Forward current vs. Forward voltage VGE=0V 125 Reverse recovery characteristics trr, Irr, vs. IF Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] 100 Forward current : IF [A] 100 75 50 25 10 0 0 1 2 Forward voltage : VF [V] 3 4 0 20 40 60 80 100 Forward current : IF [A] Transient thermal resistance 500 Reversed biased safe operating area > < +VGE=15V, -VGE < 15V, Tj = 125C, RG = 51 ohm = Thermal resistance : Rth (j-c) [C/W] 1 Collector current : Ic [A] 400 300 200 0.1 100 0 0.001 0.01 Pulse width : PW [sec.] 0.1 1 0 100 200 300 400 500 600 Collector-Emitter voltage : VCE [V] Gate-Emitter voltage : VGE [V] IGBT Module 7MBR50NE060 Switching loss vs. Collector current Vcc=300V, RG=51 ohm, VGE=15V 5 10 Switching loss : Eon, Eoff, Err [mJ /cycle] Capacitance vs. Collector-Emitter voltage Tj=25C 4 3 Capacitance : Cies, Coes, Cres [nF] 1 2 1 0.1 0 0 20 40 Collector current : Ic [A] 60 80 0 5 10 15 20 25 30 35 Collector-Emitter voltage : VCE [V] Converter Diode Forward current vs. Forward voltage 60 50 Forward current : IF [A] 40 30 20 10 0 0 0.5 1.0 Forward voltage : VF [V] 1.5 2.0 IGBT Module Outline Drawings, mm 7MBR50NE060 |
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