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PD -91855A
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
15LJQ100
15A, 100V
Description/Features The 15LJQ100 Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic surface mount SMD-0.5 ceramic package. The device's forward voltage drop and reverse leakage current are optimized for the lowest power loss and the highest circuit efficiency for typical high frequency switching power supplies and resonent power converters. Full MIL-PRF-19500 quality conformance testing is available on source controlled drawings to TX, TXV and S levels. * * * * Hermetically Sealed Low Forward Voltage Drop High Frequency Operation Guard Ring for Enhanced Ruggedness and Long Term Reliability * Surface Mount * Lightweight
Major Ratings and Characteristics Characteristics IIF(AV) Rectangular waveform VRRM IFSM @ tp = 8.3ms half-sine VF @ 15Apk, TJ =125C 15LJQ100 Units 15 100 250 0.72 A V A V C
TJ, Tstg Operating and storage -55 to 150
CASE STYLE
(ISOLATED BASE)
CATHODE ANODE ANODE
IR Case Style SMD-0.5
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03/01/02
15LJQ100
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V)
15LJQ100 100
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current See Fig. 5 IFSM Max. Peak One Cycle Non - Repetitive Surge Current 250 A @ tp = 8.3 ms half-sine
Limits
15
Units
A
Conditions
50% duty cycle @ TC = 100C, rectangular waveform
Electrical Specifications
Parameters
V FM Max. Forward Voltage Drop See Fig. 1Q
Limits
0.65 0.91 1.2 0.53 0.72 0.88
Units
V V V V V V mA mA pF nH @ 5A @ 15A @ 30A @ 5A @ 15A @ 30A TJ = 25C TJ = 125C
Conditions
TJ = 25C
TJ =1 25C
I RM CT LS
Max. Reverse Leakage Current See Fig. 2 Q Max. Junction Capacitance Typical Series Inductance
0.5 15 600 4.8
VR = rated VR
VR = 5VDC ( 1MHz, 25C ) Measured from center of cathode pad to center of anode pad
Thermal-Mechanical Specifications
Parameters
TJ Tstg Max.Junction Temperature Range Max. Storage Temperature Range to Case wt Weight (Typical) Die Size Case Style 1.0 125X125 SMD-0.5 g mils
Limits Units
-55 to 150 -55 to 150 2.25 C C C/W DC operation
Conditions
RthJC Max. Thermal Resistance, Junction
See Fig. 4
Q Pulse Width < 300s, Duty Cycle < 2%
2
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15LJQ100
1000
R e v e rse C u rre n t - I R (m A )
100 10 1 0.1 0.01 0.001 0.0001 0
TJ = 1 7 5 C 1 5 0 C 125C 7 5 C 5 0 C 2 5 C
A
20 40 60 80 100
100
R e v e r se V o lta g e - V R (V )
(A )
10
T J = 1 5 0 C T J = 1 2 5 C T J = 25 C T J = -5 5 C
F
In sta n ta ne o us F o rw a rd C u rre n t - I
Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage
1000
Ju n c tio n C a p ac ita n c e - C
T
( pF )
1
TJ = 2 5 C
0.1 0.0 0.5 1.0 1.5
F o rw ard V o lta g e D rop - V F M (V )
100 0 20 40 60 80
A
100
R e v e r se V o lta g e - V R (V )
Fig. 1 - Max. Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
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15LJQ100
10
Thermal Response (Z thJC)
D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.01 0.0001 0.001
P DM t1 t2 0.1
t1 , Rectangular Pulse Duration (sec)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
A llow able Ca se Tem peratu re - (C )
180 160 140 120 100 80 60 40 20 0 0 5 10 15 20 25
15LJQ100 15LJQ 100 R th JC (D C ) = 2.25 C /W
DC
A
A v era ge F orw ard C urrent - I F (A V ) (A )
Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/02
4
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