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| VISHAY BYT62 Vishay Semiconductors Standard Avalanche Sinterglass Diode \ Features * * * * Glass passivated junction Hermetically sealed package Controlled avalanche characteristic Low reverse current Applications High voltage rectification diode Mechanical Data Case: Sintered glass case, SOD 57 949539 Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 370 mg, (max. 500 mg) Parts Table Part BYT62 Type differentiation VR = 2400 V; IFAV = 350 mA SOD57 Package Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Peak forward surge current Average forward current Non repetitive reverse avalanche energy Junction temperature Storage temperature range Test condition see electrical characteristics tp = 10 ms, half sinewave Tamb = 25 C, RthJA 60 K/W I(BR)R = 1 A, inductive load Sub type Symbol VR = VRRM IFSM IFAV ER Tj Tstg Value 2400 10 350 60 175 - 55 to + 190 Unit V A mA mJ C C Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Junction ambient Test condition l = 10 mm, TL = constant Sub type Symbol RthJA Value 60 Unit K/W Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage IF = 1 A IF = 1 A, Tj = 175 C IF = 1 A, Tj = - 40 C Document Number 86033 Rev. 4, 07-Jan-03 Test condition IF = 200 mA Sub type Symbol VF VF VF VF Min Typ. Max 3.0 3.6 2.9 4.0 Unit V V V V www.vishay.com 1 BYT62 Vishay Semiconductors Parameter Reverse current Test condition VR = VRRM VR = VRRM, Tj = 175 C VR = VRRM, Tj = - 40 C Reverse breakdown voltage Reverse recovery time IR = 100 A IF = 0.5 A, IR = 1 A, iR = 0.25 A Sub type Symbol IR IR IR V(BR)R trr 2500 Min Typ. VISHAY Max 5 250 400 5 Unit A A nA V s Typical Characteristics (Tamb = 25 C unless otherwise specified) P - Maximum Reverse Power Dissipation ( mW ) R 600 IF - Forward Current ( A ) 10 Tj=+175C 1 500 400 300 RthJA=60K/W 200 100 0 0 40 80 120 VR=VRRM 160 200 RthJA=30K/W 0.1 Tj=+25C 0.01 Tj=-40C 0.001 0 95 9727 1 2 3 4 5 6 7 95 9725 Tj - Junction Temperature ( C ) VF - Forward Voltage ( V ) Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature 1000 IR - Reverse Current ( mA ) Figure 3. Max. Forward Current vs. Forward Voltage VR=VRRM 100 10 1 0.1 0 95 9726 40 80 120 160 200 Tj - Junction Temperature ( C ) Figure 2. Max. Reverse Current vs. Junction Temperature www.vishay.com 2 Document Number 86033 Rev. 4, 07-Jan-03 VISHAY Package Dimensions in mm 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5g Cathode Identification technical drawings according to DIN specifications 94 9538 BYT62 Vishay Semiconductors 0.82 max. 26 min. 4.2 max. 26 min. Document Number 86033 Rev. 4, 07-Jan-03 www.vishay.com 3 BYT62 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 86033 Rev. 4, 07-Jan-03 |
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