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| VISHAY TLMO / S / Y300. Vishay Semiconductors Low Current SMD LED Description These new devices have been designed to meet the increasing demand for AllnGaP based low current SMD LEDs. The package of the TLM.300. is the P-LCC-2 package. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. 94 8553 Features * * * * * * * * * * SMD LED with exceptional brightness Compatible with automatic placement equipment EIA and ICE standard package Compatible with infrared, vapor phase and wave solder processes according to CECC Available in 8 mm tape Low profile package Non-diffused lens: excellent for coupling to light pipes and backlighting Very low power consumption Luminous intensity ratio in one packaging unit IVmax/IVmin 2.0 ESD withstand voltage up to 1 KV Applications Automotive: Backlighting in dashboards and switches Telecommunication: Indicator and backlighting in telephone and fax Indicator and backlight for audio and video equipment Indicator and backlight for battery driven equipment Indicator and backlight in office equipment Flat backlight for LCDs, switches and symbols General use Parts Table Part TLMS3000 TLMS3001 TLMO3000 TLMO3001 TLMY3000 TLMY3001 Color, Luminous Intensity Super red, IV = 2.8 mcd (typ.) Super red, IV = 4.5 mcd (typ.) Orange, IV = 5.6 mcd (typ.) Orange, IV = 9.0 mcd (typ.) Yellow, IV = 4.5 mcd (typ.) Yellow, IV = 7.1 mcd (typ.) Angle of Half Intensity () 60 60 60 60 60 60 AllnGaP AllnGaP AlInGaP AlInGaP AlInGaP AlInGaP Technology Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified TLM.300. Parameter Reverse voltage DC Forward current Surge forward current tp 10 s Test condition Symbol VR IF IFSM Value 6 15 0.1 Unit V mA A Document Number 83224 Rev. 1.1, 17-Jun-04 www.vishay.com 1 TLMO / S / Y300. Vishay Semiconductors Parameter Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient t5s mounted on PC board (pad size > 16 mm2) Test condition Tamb 90 C Symbol PV Tj Tamb Tstg Tsd RthJA Value 40 125 - 40 to + 100 - 40 to + 100 260 400 VISHAY Unit mW C C C C K/W Optical and Electrical Characteristics Tamb = 25 C, unless otherwise specified Super red TLMS300. Parameter Luminous intensity 1) Test condition IF = 2 mA IF = 10 mA IF = 2 mA Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage 1) Part TLMS3000 TLMS3000 TLMS3001 Symbol IV IV IV d p VF VR Min 2.5 Typ. 20 Max Unit mcd mcd 4.0 624 635 60 1.8 6 15 12.5 636 mcd nm nm deg IF = 2 mA IF = 2 mA IF = 2 mA IF = 2 mA IR = 10 A 2.2 V V in one Packing Unit IVmax/IVmin 2.0 Orange TLMO300. Parameter Luminous intensity 1) Test condition IF = 2 mA IF = 10 mA IF = 2 mA Part TLMO3000 TLMO3000 TLMO3001 Symbol IV IV IV d p VF VR Min 5.0 Typ. 50 Max Unit mcd mcd 6.3 600 610 60 1.8 6 15 20 609 mcd nm nm deg Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage 1) IF = 2 mA IF = 2 mA IF = 2 mA IF = 2 mA IR = 10 A 2.2 V V in one Packing Unit IVmax/IVmin 2.0 www.vishay.com 2 Document Number 83224 Rev. 1.1, 17-Jun-04 VISHAY Yellow TLMY300. Parameter Luminous intensity 1) TLMO / S / Y300. Vishay Semiconductors Test condition IF = 2 mA IF = 10 mA IF = 2 mA Part TLMY3000 TLMY3000 TLMY3001 Symbol IV IV IV d p VF VR Min 4.0 Typ. 50 Max Unit mcd mcd 6.3 581 585 60 1.8 6 15 20 594 mcd nm nm deg Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage 1) IF = 2 mA IF = 2 mA IF = 2 mA IF = 2 mA IR = 10 A 2.2 V V in one Packing Unit IVmax/IVmin 2.0 Typical Characteristics (Tamb = 25 C unless otherwise specified) 50 40 30 20 10 0 18253 0 I V re l - Relative Luminous Intensity 10 20 30 P - Power Dissipation ( mW ) V 1.0 0.9 0.8 0.7 0.6 40 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0 20 40 60 80 100 95 10319 T amb - Ambient Temperature ( C ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 3. Rel. Luminous Intensity vs. Angular Displacement 25 I F - Forward Current ( mA ) 100 I F - Forward Current ( mA ) 20 15 10 5 0 0 20 40 60 80 100 10 1 1.0 95 10878 1.5 2.0 2.5 3.0 18254 T amb - Ambient Temperature ( C ) V F - Forward Voltage ( V ) Figure 2. Forward Current vs. Ambient Temperature Figure 4. Forward Current vs. Forward Voltage Document Number 83224 Rev. 1.1, 17-Jun-04 www.vishay.com 3 TLMO / S / Y300. Vishay Semiconductors VISHAY 1.2 1.1 Orange 1.0 Yellow Red 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 540 560 580 600 620 640 660 680 700 - Wavelength ( nm ) 1000 I F - Forward Current ( A ) IVrel- Relative Luminous Intensity tp/T= 0.01 0.02 0.05 100 0.1 0.2 0.5 10 0.01 1 0.10 1.00 10.00 100.00 18266 17557 tp - Pulse Duration ( ms ) Figure 5. Relative Intensity vs. Wavelength Figure 8. Forward Current vs. Pulse Length 2.50 IVrel-Relative Luminous Intensity 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -40 -20 Yellow Orange Super Red 0 20 40 60 80 100 18251 Tamb - Ambient Temperature ( C ) Figure 6. Rel. Luminous Intensity vs. Ambient Temperature 2.00 Yellow 1.95 VFrel - Forward Voltage Orange Super Red 1.90 1.85 1.80 1.75 1.70 1.65 -40 -20 0 20 40 60 80 100 18252 Tamb - Ambient Temperature ( C ) Figure 7. Forward Voltage vs. Ambient Temperature www.vishay.com 4 Document Number 83224 Rev. 1.1, 17-Jun-04 VISHAY Package Dimensions in mm TLMO / S / Y300. Vishay Semiconductors 3.5 0.2 + 0.10 1.65- 0.05 technical drawings according to DIN specifications 0.85 Mounting Pad Layout Pin identification 1.2 area covered with solder resist 2.6 (2.8) + 0.15 2.2 C A 2.8 4 1.6 (1.9) 2.4 3 + 0.15 Dimensions: IR and Vaporphase (Wave Soldering) Drawing-No. : 6.541-5025.01-4 Issue: 7; 05.04.04 95 11314 Document Number 83224 Rev. 1.1, 17-Jun-04 4 www.vishay.com 5 TLMO / S / Y300. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 83224 Rev. 1.1, 17-Jun-04 |
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