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| --= --=z an AMP company = Radar Pulsed Power Transistor, 3OW, lps Pulse, 10% Duty PH3134-30S 3.1 - 3.4 GHz v2.00 Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package I .iOO (2.54) A A I 430 :!0.16) Absolute Maximum Ratings at 25C Parameter 1 Collector-Emitter Emitter-Base Voltage il .I00 (2.54) I Symbol I 1 V,,, V sac L ( P,,, TJ T ST0 1 I Rating 66 3.0 3.6 350 200 -65 to +200 ( Units 1 A 103 (2.54) -: ?- IvI V A Voltage Collector Current (Peak) Total Power Dissipation JunctionTemperature StorageTemperature IwI "C "C UN-ESS CTiERL'!SE NOTCD, XLi,?ANCES ARE INCHES (KILL:MTCRS t.005' =.l3MK> Electrical Characteristics at 25C Specifications Subject to Change Without Notice. Radar Pulsed Power Transistor, 30W PH3134-30S v2.00 RF Test Fixture BNC CONNECTOR PDMONA ELECT. 2451 PC BOARDS, , f-1 /INSULATED JUMPER GROUND ROLLOVER, 2 PLACES-, -SOLDER LUG ELECTROLYTIC MALLORY CAPACITOR TTSOHSOA SMA CONNECTOR , -.J.J HEATSINK, ALUMINUM 73050255-24 1 CHIP CAPACITCIR BASE PLATE, ALWIMJM L ;;mR; CARWER 73050258-04 73050258-03 VIEV \ TRANSISTOR NORYL CLANP, 73050258-05 hW;;STOR 7305025e-01 CARRIER TOP Test Fixture PC Board Dimensions 0 |
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