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December 2001
AO4403 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
VDS (V) = -30V ID = -6.1 A RDS(ON) < 46m (VGS = -10V) RDS(ON) < 61m (VGS = -4.5V) RDS(ON) < 117m (VGS = -2.5V)
SOIC-8 Top View S S S G D D D D
D
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
A B
Maximum -30 12 -6.1 -5.1 -60 3 2.1 -55 to 150
Units V V A
VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 31 59 16
Max 40 75 24
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO4403
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-6.1A TJ=125C 49 76 11 -0.75 -0.7 -1 38 Min -30 -1 -5 100 -1.3 46 70 61 117 -1 -4.2 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
VGS=-4.5V, ID=-5A VGS=-2.5V, ID=-1A VDS=-5V, ID=-5A Forward Transconductance IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current
7
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Crss Gate resistance Rg SWITCHING PARAMETERS Qg Total Gate Charge Gate Source Charge Qgs Qgd Gate Drain Charge tD(on) Turn-On DelayTime Turn-On Rise Time tr tD(off) Turn-Off DelayTime Turn-Off Fall Time tf trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge
VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
940 104 73 6 9.4 2 3 7.6 8.6 44.7 16.5 22.7 15.9
VGS=-4.5V, VDS=-15V, ID=-5A
VGS=-10V, VDS=-15V, RL=2.4, RGEN=6 IF=-5A, dI/dt=100A/s IF=-5A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO4403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25 -10V 20 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 120 100 RDS(ON) (m) 80 60 40 VGS=-10V 20 0.00 2.00 4.00 6.00 8.00 10.00 Normalized On-Resistance 1.6 -2.5V -4.5V -3V -ID (A) 6 -ID(A) 125C 10 VDS=-5V 8
4 2
VGS=-2V
25C
0 0 0.5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics
VGS=-2.5V
1.4
ID=-5A VGS=-4.5V VGS=-10V
1.2
VGS=-2.5V ID=-2A
VGS=-4.5V
1
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
-ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
190 170 150 RDS(ON) (m) 130 110 90 70 50 30 10 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=-2A -IS (A)
1.0E+01 1.0E+00 1.0E-01 125C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C
Alpha and Omega Semiconductor, Ltd.
AO4403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 200 0 0 2 4 6 8 10 12 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics VDS=-15V ID=-5A Capacitance (pF) 1400 1200 1000 800 600 400 Coss Crss Ciss
100.0
TJ(Max)=150C TA=25C RDS(ON) limited 0.1s
40 10s 100s 1ms 10ms Power (W) 30 TJ(Max)=150C TA=25C
-ID (Amps)
10.0
20
1.0 1s 10s DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 Z JA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Package Data
DIMENSIONS IN MILLIMETERS SYMBOLS
DIMENSIONS IN INCHES
A A1 A2 b c D E1 e E h L aaa
MIN 1.45 0.00 --- 0.33 0.19 4.80 3.80 5.80 0.25 0.40 --- 0
NOM 1.50 --- 1.45 --- --- --- --- 1.27 BSC --- --- --- --- ---
MAX 1.55 0.10 --- 0.51 0.25 5.00 4.00 6.20 0.50 1.27 0.10 8
MIN 0.057 0.000 --- 0.013 0.007 0.189 0.150 0.228 0.010 0.016 --- 0
NOM 0.059 --- 0.057 --- --- --- --- 0.050 BSC --- --- --- --- ---
MAX 0.061 0.004 --- 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8
NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE 0.100 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.1000 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE
PACKAGE MARKING DESCRIPTION
RECOMMENDED LAND PATTERN
NOTE: LG PARTN F A Y W LN
- AOS LOGO - PART NUMBER CODE. - FAB LOCATION - ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE
SO-8 PART NO. CODE
UNIT: mm
PART NO. AO4400 AO4401
CODE 4400 4401
PART NO. AO4800 AO4801
CODE 4800 4801
PART NO. AO4700 AO4701
CODE 4700 4701
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Carrier Tape
SO-8 Tape and Reel Data
SO-8 Reel
SO-8 Tape
Leader / Trailer & Orientation

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