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FEATURES * Isolation Test Voltage: 5300 VRMS * TTL Compatible * High Bit Rates: 1.0 Mbit/s * High Common-Mode Interference Immunity * Bandwidth 2.0 MHz * Open-Collector Output * External Base Wiring Possible * Field-Effect Stable by TRIOS* * Underwriters Lab File #E52744 * V VDE #0884 Approval Available with Option 1 DE High-Speed TRIOS(R) Optocoupler Dimensions in inches (mm) pin one ID 4 .255 (6.48) .268 (6.81) 5 6 7 8 Cathode 3 4 6 5 6N135 6N136 3 2 1 NC Anode 1 2 8 7 Cathode (VCC) Base (VB) Collector (VO) Emitter (GND) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .031 (0.79) NC Description The 6N135 and 6N136 are optocouplers with a GaAIAs infrared emitting diode, optically coupled with an integrated photodetector which consists of a photodiode and a high-speed transistor in a DIP-8 plastic package. Signals can be transmitted between two electrically separated circuits up to frequencies of 2.0 MHz. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages. Maximum Ratings Emitter Reverse Voltage ..............................................5.0 V Forward Current.............................................25 mA Peak Forward Current (t =1.0 ms, duty cycle 50%) .........................50 mA Maximum Surge Forward Current (t 1.0 s, 300 pulses/s) .................................1.0 A Thermal Resistance................................... 700 K/W Total Power Dissipation (TA70C) ...............45 mW Detector Supply Voltage ..................................... -0.5 to 15 V Output Voltage...................................... -0.5 to 15 V Emitter-Base Voltage .......................................5.0 V Output Current..............................................8.0 mA Maximum Output Current ..............................16 mA Base Current................................................ 5.0 mA Thermal Resistance................................... 300 K/W Total Power Dissipation (TA70C) .............100 mW Package Isolation Test Voltage (between emitter and detector climate per DIN 50014, part 2, Nov. 74 (t=1.0 s) .....................5300 VRMS Pollution Degree (DIN VDE 0109)....................... 2.0 Creepage................................................... 7.0 mm Clearance .................................................. 7.0 mm Comparative Tracking Index per DIN IEC112/VDE 0303 part 1, Group IIIa per DIN VDE 6110 ........................ 175 Isolation Resistance VIO=500 V, TA=25C ................................ 1012 VIO=500 V, TA=100C .............................. 1011 Storage Temperature Range ........-55C to +125C Ambient Temperature Range....... -55C to +100C Soldering Temperature (max. 10 s, dip soldering 0.5 mm from case bottom)....... 260C .300 (7.62) typ. .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56) .020 (.51 ) .035 (.89 ) .100 (2.54) typ. 10 3-9 .008 (.20) .012 (.30) .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) Characteristics TA=0 to 70C unless otherwise specified, TA=25C typ. Emitter Forward Voltage Breakdown Voltage Reverse Current Capacitance Temperature Coefficient, Forward Voltage Detector Supply Current Logic Low Supply Current Logic High Output Voltage, Output Low 6N135 6N136 Output Current, Output High Output Current, Output High Package Coupling Capacitance, Input-Output Current Transfer Ratio 6N135 6N136 6N135 6N136 Symbol Value 1.6 (1.9) 5.0 0.5 (10) 125 -1.7 Unit V Condition VF VBR IR CO VF /TA IF=16 mA IR=10 A A VR=5.0 V pF VR=0 V, f=1.0 MHz mV/C IF=16 mA ICCL ICCH VOL 150 0.01 (1) 0.1 (0.4) A V IOH 3.0 (500) nA 0.01 (1) A IF=16 mA, VO open, VCC=15 V IF=0 mA, VO open, VCC=15 V IF=16 mA, VCC=4.5 V IO=1.1 mA IO=2.4 mA IF=0 mA, VO=VCC=5.5 V IF=0 mA, VO=VCC=15 V CIO CTR CTR CTR CTR 0.6 16 (7.0) 35 (19) 5.0 15 pF % f=1.0 MHz IF=16 mA, VO=0.4 V, VCC=4.5 V, TA=25C IF=16 mA, VO=0.5 V, VCC=4.5 V *TRIOS--TRansparent IOn Shield 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-62 May 17, 2000-08 Figure 1. Switching Times IF Delay Time IF=16 mA, VCC=5.0 V, TA=25C Parameter High-Low t Symbol 6N135 6N136 Value 0.3 (1.5) 0.2 (0.8) Unit s Condition tPHL RL=4.1 k RL=1.9 k Low-High 6N135 6N136 tPLH 0.3 (1.5) 0.2 (0.8) s RL=4.1 k RL=1.9 k VO 5V 1.5 V t tPHL tPLH VOL Common Mode Interference Immunity VCM=10 VP-P , VCC=5.0 V, TA=25C Parameter High, IF=0 mA Low, IF=16 mA 6N135 6N136 6N135 6N136 CML Symbol CMH Value 1000 Unit V/s Condition Pulse generator ZO=50 tr,tf=5 ns duty cycle 10% t100 s 1 IF RL=4.1 k RL=1.9 k RL=4.1 k RL=1.9 k 8 7 6 5 RL 5V 2 IF Monitor Figure 3. LED forward current vs. forward voltage VO 3 100 4 IF - LED Current in mA CL 15 pF 20 15 10 5 0 75C 25C 0C Figure 2. Common-mode Interference Immunity VCM 10 V 90% 10% tr tf 10% 90% t 0V VO 5V 1.3 1.4 1.5 1.6 1.7 VF - LED forward Voltage A: IF=0 mA VO t Figure 4. Permissible forward LED current vs. temperature 30 IF LED Current in ma VOL B: IF=16 mA t 20 IF 1 2 3 4 8 7 6 5 RL 5V A B VFF 10 VO 0 0 20 40 60 80 100 Ambient Temperature in C +VCM Pulse generator ZO=50 tr,tf=8 ns 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-63 6N135/136 May 17, 2000-08 Figure 5. Permissible power dissipation vs. temperature 120 Total Power in mW 100 80 60 40 Emitter 20 0 0 20 40 60 80 Ambient Temperature in C 100 Detector Figure 8. Propagation Delay vs. Temperature-6N136 @ VCC=5.0 V, IF=16 mA, RL=1.9 k tp - Propagation Delay Time - ns 900 800 700 600 500 400 300 200 100 0 -60 -40 -20 0 20 40 60 Temperature, Ta(C) 80 100 TpHL @ 1.5V TpHL @ 3V TpLH @ 1.5V TpLH @ 3V Figure 6. Output Current vs. Output Voltage (TA=25C, VCC=5.0 V) 25 IF=40mA Figure 9. Propagation Delay vs. Temperature-6N135 @ VCC=5.0 V, IF=16 mA, RL=4.1 k tp - Propagation Delay Time - ns 1400 1200 1000 800 600 400 200 0 -60 TpHL TpLH Output Current, Io(mA) 20 15 10 5 0 0 5 IF=35mA IF=30mA IF=25mA IF=20mA IF=15mA IF=10mA IF=5mA 10 15 Output Voltage, Vo(V) 20 25 -40 -20 0 20 40 60 Temperature, Ta(C) 80 100 Figure 7. Output Current vs. Temperature @ VO=0.4 V, VCC=5.0 8 Output Current, Io(mA) 7 6 5 4 3 2 1 0 -60 -40 -20 0 20 40 60 Temperature, Ta(C) 80 100 IF = 1mA IF = 10mA IF = 20mA IF = 16mA Figure 10. Logic High Output Current vs. Temperature 100 10 1 0.1 0.01 VCC=VO=15 V VCC=VO=5 V IF = 2mA IOH - Collector Current, IC (nA) 0.001 -60 -40 -20 0 20 40 60 Temperature, TA (C) 80 100 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-64 6N135/136 May 17, 2000-08 Figure 11. Small Signal Current Transfer Ratio vs. Quiescent Input Current (VCC=5.0 V, RL=100 ) 0.6 iF/iO / Small Signal Current Transfer Ratio 0.5 0.4 0.3 0.2 0.1 0 0 5 10 IF / mA 15 20 25 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-65 6N135/136 May 17, 2000-08 |
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