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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1305 DESCRIPTION *With TO-220Fa package *Low collector saturation voltage *High transition frequency APPLICATIONS *High current switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base * Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -30 -30 -5 -3 15 W V A UNIT V Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA1305 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA , IB=0 B -30 V V(BR)EBO Emitter-base breakdown voltage IE=-50A , IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-30V;IE=0 -1.0 A IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 A hFE DC current gain IC=-0.5A ; VCE=-3V 60 320 fT Transition frequency IC=-0.5A ; VCE=-5V 100 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1305 Fig.2 Outline dimensions (unindicated tolerance:0.15 mm) 3 |
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