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| HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 24 A = 2.7 V = 55 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms Maximum Ratings 600 600 20 30 24 12 48 V V V V A A A A W C C C TO-263 (IXGA) G E C (TAB) TO-220 AB (IXGP) = 15 V, TVJ = 125C, RG = 33 ICM = 24 V GE Clamped inductive load, L = 300 H @ 0.8 VCES TC = 25C 100 -55 ... +150 150 -55 ... +150 Mounting torque with screw M3 Mounting torque with screw M3.5 G C E G = Gate E = Emitter C = Collector TAB = Collector 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 300 g C Features Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s * Very high frequency IGBT * New generation HDMOSTM process * International standard package * High peak current handling capability Applications JEDEC TO-220AB and TO-263AA Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C 5.0 200 1.5 100 2.1 2.7 V V A mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 A, VGE = 0 V = 250 A, VGE = VGE * * * * * V CE = 0.8 VCES V GE = 0 V V CE = 0 V, VGE = 20 V IC = ICE90, VGE = 15 V PFC circuit AC motor speed control DC servo and robot drives Switch-mode and resonant-mode power supplies High power audio amplifiers Advantages * Fast switching speed * High power density (c) 2002 IXYS All rights reserved 98513C (2/02) IXGA 12N60CD1 IXGP 12N60CD1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 5 11 860 VCE = 25 V, VGE = 0 V, f = 1 MHz 100 15 32 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 300 H VCE = 0.8 VCES, RG = Roff = 18 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 300 H VCE = 0.8 VCES, RG = Roff = 18 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG IGBT 0.25 10 10 20 20 60 55 0.09 20 20 0.5 85 85 0.27 180 180 0.60 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 TO-220 AB (IXGP) Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % TO-263 AA (IXGA) Outline 1.25 K/W K/W Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions I F = 15A; T VJ = 150C Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.7 T VJ = 25C 2 2.5 2.5 V V A Dim. Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 V R = 100 V; I F =25A; -di F /dt = 100 A/s L < 0.05 H; T VJ = 100C IF = 1 A; -di/dt = 50 A/s; VR = 30 V TJ = 25C Diode 35 ns 1.6 K/W A A1 b b2 c c2 Min. Recommended Footprint D D1 E E1 e L L1 L2 L3 L4 R IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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