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DIONICS, INC.
65 Rushmore Street Westbury, NY 11590
Phone: (516) 997-7474 Fax: (516) 997-7479 Website: www.dionics- usa.com
DIG-11-15-30-SM Photovoltaic MOSFET / IGBT Driver
Features:
O O O O O O O O
Applications:
O O O O O O O O
Optically Isolated Constructed For Surface Mount Assembly Suitable For Manual or Automatic Placement Sturdy Construction, Immune To Handling Damage Fast Turn On, Turn Off & Active Gate Discharge Dielectrically Isolated PV IC Construction High Open Circuit Voltage Up To 17.5V High Isolation Resistance
MOSFET/IGBT Driver Medical Implant Application Medical Solid-State Relays A.T.E. (Automatic Test Equipment) Medical Test Equipment Isolation Amplifiers Load Control From Microprocessor I/O Ports Thermocouple Open Detectors
Description: The DIG-11-15-30-SM Photovoltaic is a State-of-the-Art, optically-coupled floating power source used primarily to control MOSFET/IGBT's when electrical isolation between input and output is required. It is particularly well suited for Medical implant applications. In addition to the infrared LED and photovoltaic (PV) diode array, each of the DIG-11-15-30-SM devices contains circuitry that rapidly discharges the power MOSFET/IGBT gate when the LED is deactivated. The unique rapid discharge feature of the DIG-11-15-30-SM makes it particularly useful for high side switching of MOSFET/IGBT's in Medical applications, DC motor control and switching regulator applications. The rugged design features a hard ceramic top, 2 hard sides and of course a hard ceramic bottom. Therefore, it is ideal for manual and automatic vacuum pencil assembly methods, with handling damage almost impossible. The typical input circuit to the LED is a limiting resistor connected in series with the LED. When activated, the LED emits infrared light towards the photovoltaic diode array, which then responds by generating an open circuit voltage (Voc) and disabling the turn off circuitry. The self-limiting photovoltaic output of the diode array is floating and therefore, can be safely applied directly to the MOSFET/IGBT, regardless of the source potential of the MOSFET/IGBT. When the LED is deactivated, the active turn-off circuit discharges the capacitive input of the MOSFET/IGBT. The active turn-off circuitry is designed such that the turn-off time of the MOSFET/IGBT is relatively independent of the input capacitance over a range of 300 to 5000 pF.
DIG-11-15-30-SM Layout:
140 mil 50 mil 130 mil
DIG-11-15-30-SM Configuration:
Pad Number
3 4
130 mil
Function
Size (Inches)
1 2 3 4
+ Input - Input + Vo - Vo
0.030 x 0.050 0.030 x 0.030 0.030 x 0.030 0.030 x 0.030
140 mil
11 15 30
2
Top View Side View
1
Bottom View
03/2002
DIG-11-15-30-SM Photovoltaic MOSFET/IGBT Driver
v Absolute Maximum Ratings (T a = 25 0C) LED Forward Current LED Forward Current LED Reverse Voltage Output Discharge Current Operating Temperature Range Storage Temperature Steady State Peak 10% Duty Cycle 100 mA 150 mA 10V 15mA -550C to 1250 C -550C to 1500 C
Electrical Characteristics (T a =25 0C Unless otherwise specified)
Parameter & Test Condition Symbol Open Circuit Voltage Voc Iled = 30 mA Short Circuit Current Isc Iled = 30 mA LED Forward Voltage Vfled If = 20 mA LED Reverse Current Irled Vr = -5V Off State Voltage Voff Ioff = 10 A; Iled = 0 mA Isolation Voltage Viso 1 sec; Iiso < 100 A Turn-On Time* Ton Iled = 30 mA C=1500pF; Voc up to 50% Turn-Off Time* Toff Iled = 30 mA C=1500 pF * Sample Tested
Min. 14.0 40.0 10.0 1500 -
Max. 17.5 1.7 0.75 100
Unit V A V A V VDC s
-
10
s

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