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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 FEATURES 1.BASE TRANSISTOR NPN(c) TO 251 Power dissipation PCM : 1.25W Tamb=25ae(c) Collector current ICM: 3A Collector-base voltage V(BR)CBO : 40V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(c) 1 DC current gain hFE(c) 2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE (sat) VBE (sat) fT 2.COLLECTOR 3.EMITTER 1 2 3 unless Test otherwise specified(c) TYP MAX UNIT V V V 1 10 1 A A A conditions MIN 40 30 6 Ic= 100|I AIE=0 Ic= 10 mAIB=0 IE= 100|I AIC=0 VCB= 40 VIE=0 VCE= 30 VIB=0 VEB= 6 VIC=0 VCE= 2 V, IC= 1A VCE= 2 V, IC= 100m A IC= 2A, IB= 0.2 A IC= 2A, IB= 0.2 A VCE= 5V, Ic=0.1A f =10MHz 60 32 400 0.5 1.5 50 V V MHz CLASSIFICATION OF h FE(1) Rank Range R 60-120 O 100-200 Y 160-320 GR 200-400 TO-251 PACKAGE OUTLINE DIMENSIONS D D1 C1 A B b1 b L e e1 E A1 C Symbol A A1 B b b1 c c1 D D1 E e e1 L Dimensions In Millimeters Min 2.200 1.020 1.350 0.500 0.700 0.430 0.430 6.350 5.200 5.400 2.300TYP 4.500 7.500 4.700 7.900 Max 2.400 1.270 1.650 0.700 0.900 0.580 0.580 6.650 5.400 5.700 Min Dimensions In Inches Max 0.094 0.050 0.065 0.028 0.035 0.023 0.023 0.262 0.213 0.224 0.091TYP 0.177 0.295 0.185 0.311 0.087 0.040 0.053 0.020 0.028 0.017 0.017 0.250 0.205 0.213 |
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