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June 2004
AOD444, AOD444L (Green Product) N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD444 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. AOD444L (Green Product) is offered in a lead-free package.
Features
VDS (V) = 60V ID = 12 A RDS(ON) < 60 m (VGS = 10V) RDS(ON) < 85 m (VGS = 4.5V)
TO-252 D-PAK
D
Top View Drain Connected to Tab
G S
G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current
C C C
Maximum 60 20 12 12 30 12 23 20 10 2 1.3 -55 to 175
Units V V A A mJ W W C
TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25C
Repetitive avalanche energy L=0.1mH Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 17.4 50 4
Max 30 60 7.5
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AOD444, AOD444L
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=10mA, VGS=0V VDS=48V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=12A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=6A Forward Transconductance VDS=5V, ID=12A IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C 1 30 47 85 67 14 0.74 1 12 450 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 61 27 1.35 7.5 VGS=10V, VDS=30V, ID=12A 3.8 1.2 1.9 4.2 VGS=10V, VDS=30V, RL=2.5, RGEN=3 IF=12A, dI/dt=100A/s 3.4 16 2 27.6 30 35 2 10 5 540 85 60 2.4 Min 60 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any a given application depends on the user's specific board design, and the maximum temperature fo 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOD444, AOD444L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 80 Normalized On-Resistance 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V,6A VGS=10V, 12A 7V 5V ID(A) 4.5V VGS=4V 3.5V 5 10 125C 25C 10V 6V 20 VDS=5V 15
0 2 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics
70 RDS(ON) (m)
VGS=4.5V
60 VGS=10V 50
40 0 4 8 12 16 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
160 140 RDS(ON) (m) 120 125C 100 80 60 IS (A) ID=12A
1.0E+01 1.0E+00 125C 1.0E-01 1.0E-02 1.0E-03 1.0E-04 25C
25C
40 4 6 8 10 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD444, AOD444L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 100 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss VDS=30V ID=12A A 700 600 Capacitance (pF) 500 400 300 Coss 200 Ciss
TJ(Max)=175C, TA=25C 10s RDS(ON) limited 1ms 10ms
200 160 Power (W) 120 80 40 0 0.0001 TJ(Max)=175C TA=25C
10.0 ID (Amps)
100s
1.0
DC
0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=7.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOD444, AOD444L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
14 ID(A), Peak Avalanche Current Power Dissipation (W) 0.001 12 10 8 6 4 2 0 0.00001 TA=25C 25
tA =
L ID BV - VDD
20 15 10 5 0
0.0001
0
25
50
75
100
125
150
175
Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability
TCASE (C) Figure 13: Power De-rating (Note B)
14 12 Current rating ID(A) 10 Power (W) 8 6 4
50 40 30 20 10 TA=25C
2 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) 0 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10 ZJA Normalized Transient Thermal Resistance
1
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 PD Single Pulse Ton 0.001 0.00001 T 100 1000
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.

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