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| November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ___________________________________________________________________________________________ D G D G S TO-92 2N7000 S (TO-236AB) 2N7002/NDS7002A Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted 2N7000 2N7002 NDS7002A Units VDSS Drain-Source Voltage 60 60 V V V VDGR VGSS Drain-Gate Voltage (RGS < 1 M) Gate-Source Voltage - Continuous - Non Repetitive (tp < 50s) 20 40 200 500 400 3.2 -55 to 150 300 115 800 200 1.6 280 1500 300 2.4 -65 to 150 ID PD TJ,TSTG TL Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation Derated above 25 C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds o mA mW mW/C C C THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient 312.5 625 417 C/W (c) 1997 Fairchild Semiconductor Corporation 2N7000.SAM Rev. A1 Electrical Characteristics T Symbol Parameter OFF CHARACTERISTICS A = 25C unless otherwise noted Conditions Type Min Typ Max Units BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 10 A VDS = 48 V, VGS = 0 V TJ=125C VDS = 60 V, VGS = 0 V TJ=125C All 2N7000 60 1 1 V A mA A mA nA nA nA nA 2N7002 NDS7002A 2N7000 2N7002 NDS7002A 2N7000 2N7002 NDS7002A 1 0.5 10 100 -10 -100 IGSSF Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V VGS = 20 V, VDS = 0 V IGSSR Gate - Body Leakage, Reverse VGS = -15 V, VDS = 0 V VGS = -20 V, VDS = 0 V ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA VDS = VGS, ID = 250 A 2N7000 2N7002 NDS7002A 2N7000 0.8 1 2.1 2.1 1.2 1.9 1.8 3 2.5 5 9 5.3 7.5 13.5 7.5 13.5 2 3.5 3 5 2.5 0.4 3.75 1.5 1 0.15 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA TJ =125C VGS = 4.5 V, ID = 75 mA VGS = 10 V, ID = 500 mA TJ =100C VGS = 5.0 V, ID = 50 mA TJ =100C VGS = 10 V, ID = 500 mA TJ =125C VGS = 5.0 V, ID = 50 mA TJ =125C 2N7002 1.2 1.7 1.7 2.4 1.2 2 1.7 2.8 NDS7002A VDS(ON) Drain-Source On-Voltage VGS = 10 V, ID = 500 mA VGS = 4.5 V, ID = 75 mA VGS = 10 V, ID = 500mA VGS = 5.0 V, ID = 50 mA VGS = 10 V, ID = 500mA VGS = 5.0 V, ID = 50 mA 2N7000 0.6 0.14 0.6 0.09 0.6 0.09 V 2N7002 NDS7002A 2N7000.SAM Rev. A1 Electrical Characteristics T Symbol Parameter A = 25oC unless otherwise noted Conditions Type Min Typ Max Units ON CHARACTERISTICS Continued (Note 1) ID(ON) On-State Drain Current VGS = 4.5 V, VDS = 10 V VGS = 10 V, VDS > 2 VDS(on) VGS = 10 V, VDS > 2 VDS(on) 2N7000 2N7002 NDS7002A 2N7000 2N7002 NDS7002A 75 500 500 100 80 80 600 2700 2700 320 320 320 20 11 4 50 25 5 10 mA gFS Forward Transconductance VDS = 10 V, ID = 200 mA VDS > 2 VDS(on), ID = 200 mA VDS > 2 VDS(on), ID = 200 mA mS DYNAMIC CHARACTERISTICS Ciss Coss Crss ton Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time VDS = 25 V, VGS = 0 V, f = 1.0 MHz All All All pF pF pF ns VDD = 15 V, RL = 25 , ID = 500 mA, VGS = 10 V, RGEN = 25 VDD = 30 V, RL = 150 , ID = 200 mA, VGS = 10 V, RGEN = 25 2N7000 2N700 NDS7002A 20 toff Turn-Off Time VDD = 15 V, RL = 25 , ID = 500 mA, VGS = 10 V, RGEN = 25 VDD = 30 V, RL = 150 , ID = 200 mA, VGS = 10 V, RGEN = 25 2N7000 10 ns 2N700 NDS7002A 20 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS ISM VSD Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 115 mA (Note 1) VGS = 0 V, IS = 400 mA (Note 1) 2N7002 NDS7002A 2N7002 NDS7002A 2N7002 NDS7002A 115 280 0.8 1.5 0.88 0.88 1.5 1.2 mA A V Note: 1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. 2N7000.SAM Rev. A1 Typical Electrical Characteristics 2N7000 / 2N7002 / NDS7002A 2 3 VGS = 10V , DRAIN-SOURCE CURRENT (A) 1 .5 9.0 8.0 7.0 6.0 RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 .5 V GS =4.0V 4 .5 5 .0 6 .0 2 1 7 .0 1 .5 5.0 0 .5 8 .0 9 .0 10 4.0 3.0 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 5 1 I 0 D 0 .5 0 0 .4 0 .8 1 .2 I D , DRA IN CURRENT (A) 1 .6 2 Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 2 3 V GS = 10V DRAIN-SOURCE ON-RESISTANCE V GS = 10V DRAIN-SOURCE ON-RESISTANCE 2 .5 1.75 I D = 500m A R DS(on) , NORMALIZED R DS(ON) , NORMALIZED 1.5 2 TJ = 1 2 5 C 1.25 1 .5 25C 1 1 -55C 0 .5 0.75 0.5 -5 0 -2 5 0 25 50 75 100 T , JUNCTION T EMPERATURE (C) J 125 150 0 0 0 .4 0 .8 1 .2 I D , DRAIN CURRENT (A) 1 .6 2 Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Drain Current and Temperature 2 1 .1 Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE VDS = 10V 1.6 ID , DRAIN CURRENT (A) T J = -55C 25C 125C 1 .0 5 V DS = VGS I D = 1 mA 1 1.2 0 .9 5 0.8 0 .9 0.4 0 .8 5 0 0 2 V GS 4 6 8 , GATE TO SOURCE VOLTAGE (V) 10 0 .8 -50 -25 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (C) 125 150 Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with Temperature 2N7000.SAM Rev. A1 Typical Electrical Characteristics (continued) 2N7000 / 2N7002 /NDS7002A 1.1 2 DRAIN-SOURCE BREAKDOWN VOLTAGE I D = 250A IS , REVERSE DRAIN CURRENT (A) 1.075 1.05 1.025 1 0.975 0.95 0.925 -50 1 0 .5 V GS = 0V BV DSS , NORMALIZED TJ = 1 2 5 C 0 .1 0 .0 5 25C -5 5 C 0 .0 1 0 .0 0 5 -25 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (C) 125 150 0 .0 0 1 0 .2 0 .4 V SD 0 .6 0 .8 1 1 .2 , BODY DIODE FORW A RD VOLTAGE (V) 1 .4 Figure 7. Breakdown Voltage Variation with Temperature Figure 8. Body Diode Forward Voltage Variation with 60 40 10 V DS = 2 5 V C iss 20 VGS , GATE-SOURCE VOLTAGE (V) 8 CAPACITANCE (pF) C oss 10 6 ID = 5 0 0 m A 4 5 C rss f = 1 MHz V GS = 0V 1 2 V DS 3 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 30 50 2 2 280m A 115m A 1 0 0 0 .4 0 .8 1 .2 Q g , GATE CHARGE (nC) 1 .6 2 Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics VDD t d(on) t on tr 90% t off t d(off) 90% tf V IN D RL V OUT DUT Output, Vout VGS 10% 10% 90% R GEN Inverted G Input, Vin S 10% 50% 50% Pulse Width Figure 11. Figure 12. Switching Waveforms 2N7000.SAM Rev. A1 Typical Electrical Characteristics (continued) 3 2 1 ID , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) 0.5 RD S( ) ON Lim it 3 2 1 10 it 0u s 10 1m 10 ms 10 0m s 1s 0u s 0.5 RD S(O Lim N) 1m s s 0.1 0.05 0.1 0.05 10 10 0m ms V GS = 10V SINGLE PULSE 0.01 0.005 1 2 T A = 25C 10 s DC s VGS = 10V SINGLE PULSE 0.01 0.005 1 T A = 25C 2 1s 10 s DC 5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V) 60 80 5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V) 60 80 Figure 13. 2N7000 Maximum Safe Operating Area 3 2 1 I D , DRAIN CURRENT (A) 0.5 RD S(O N) Lim Figure 14. 2N7002 Maximum Safe Operating Area it 10 1m s 0u s 10 0.1 0.05 ms 10 0m s V GS = 10V SINGLE PULSE 0.01 0.005 1 2 T A = 25C 1s 10 s DC 5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V) 60 80 Figure 15. NDS7000A Maximum Safe Operating Area 1 TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 0.5 D = 0.5 0.2 0.1 0.05 0 .2 0.1 P(pk) 0.05 R JA (t) = r(t) * R JA R JA = (See Datasheet) t1 0 .02 0.01 t2 0.02 0.01 0.0001 Single Pulse TJ - T A = P * RJA (t) Duty Cycle, D = t1 /t2 0.001 0.01 0.1 t 1, TIME (sec) 1 10 100 300 Figure 16. TO-92, 2N7000 Transient Thermal Response Curve 1 TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05 D = 0.5 0 .2 0.1 0 .0 5 0 .0 2 0 .0 1 P(pk) r(t), NORMALIZED EFFECTIVE R JA (t) = r(t) * R JA R JA = (See Datasheet) 0.01 Single Pulse t1 t2 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 TJ - T A = P * RJA (t) Duty Cycle, D = t1 /t2 100 300 Figure 17. SOT-23, 2N7002 / NDS7002A Transient Thermal Response Curve 2N7000.SAM Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G |
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