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| Lead-free Green DCX4710H 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS General Description NEW PRODUCT * DCX4710H is best suited for applications where the load needs to be turned on and off using micro-controllers, comparators or other control circuits particularly at a point of load. It features a discrete pre-based PNP transistor which can support continuous maximum current of 100 mA. It also contains a pre-based NPN transistor which can be used as a control and can be biased using a higher supply. The component devices can be used as a part of circuit or as stand alone discrete devices. 4 5 6 3 2 1 Fig. 1: SOT-563 Features * * * * * Built in Biasing Resistors Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/ROHS Compliant (Note 1) "Green" Device (Note 2) R2 10k CQ1 6 BQ2 5 EQ2 4 Mechanical Data * * * * * * * * Q1 DDTA114YE_DIE R1 10k R2 47k R1 Q2 10k Case: SOT-563 Case Material: Molded Plastic. "Green Molding" Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Fig. 2 Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 7 Ordering Information: See Page 7 Weight: 0.005 grams (approximate) Sub-Component P/N DDTA114YE_DIE DDTC114EE_DIE Reference Q1 Q2 Device Type PNP NPN 1 EQ1 DDTC114EE_DIE 2 BQ1 3 CQ2 Fig. 2: Schematic and Pin Configuration R1 (NOM) 10KW 10KW R2 (NOM) 47KW 10KW Figure 2 2 Maximum Ratings: Total Device Characteristic Power Dissipation (Note 3) Power Derating Factor above 45C Output Current @ TA = 25C unless otherwise specified Symbol Pd Pder Iout Value 150 1.43 100 Unit mW mW/C mA Thermal Characteristics Characteristic @ TA = 25C unless otherwise specified Symbol Tj, Tstg RqJA Value -55 to +150 833 Unit C C/W Junction Operation and Storage Temperature Range Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to one heated junction of PNP transistor) Notes: 1. No purposefully added lead. 2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; as per Diodes Inc. suggested pad layout document AP02001 on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30871 Rev. 3 - 2 1 of 8 www.diodes.com DCX4710H a Diodes Incorporated Sub-Component Device - Pre-Biased PNP Transistor (Q1) @ TA = 25C unless otherwise specified Value -50 -50 -50 +6 to -40 -100 Unit V V V V mA NEW PRODUCT Characteristic Collector-Base Voltage Collector-Emitter Voltage Supply Voltage Input Voltage Output Current (dc) Symbol VCBO VCEO VCC VIN IC(max) Sub-Component Device - Pre-Biased PNP Transistor (Q1) Characteristic Collector-Base Voltage Collector-Emitter Voltage Supply Voltage Input Voltage Output Current (dc) Symbol VCBO VCEO VCC VIN IC(max) @ TA = 25C unless otherwise specified Value 50 50 50 -10 to +40 100 Unit V V V V mA Electrical Characteristics: Pre-Biased PNP Transistor (Q1) Characteristic OFF CHARACTERISTICS Collector-Base Cut Off Current Collector-Emitter Cut Off Current Emitter-Base Cut Off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Output Off Voltage Input Off Voltage Ouput Off Current ON CHARACTERISTICS 3/4 3/4 Collector-Emitter Saturation Voltage VCE(SAT) 3/4 3/4 3/4 3/4 Equivalent on-resistance* RCE(SAT) 3/4 50 130 DC Current Gain hFE 180 100 140 Output On Voltage Input On Voltage (Load is on) Input Current Base-Emitter Turn-on Voltage Base-Emitter Saturation Voltage Input Resistor +/- 30% (Base) Pull-up Resistor (Base to Vcc supply) Resistor Ratio VOL VI(ON) Ii VBE(ON) VBE(SAT) DR1 R2 D(R2/R1) 3/4 -1.25 3/4 3/4 3/4 7 32 20 -0.066 -0.078 -0.06 -0.04 -0.99 0.99 3/4 3/4 3/4 3/4 3/4 3/4 -0.185 -0.9 3/4 -0.72 -1.15 10 47 3/4 ICBO ICEO IEBO V(BR)CBO V(BR)CEO VOH VI(OFF) IO(OFF) 3/4 3/4 3/4 -50 -50 -4.6 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 -0.71 3/4 Symbol Min Typ @ TA = 25C unless otherwise specified Max -100 -1 -500 3/4 3/4 3/4 -0.5 -1 -0.1 -0.1 -0.1 -0.1 -1.15 -1.15 3.5 3/4 3/4 3/4 3/4 3/4 -0.22 3/4 -0.88 -0.8 -1.25 13 62 20 W 3/4 3/4 3/4 3/4 3/4 V V mA V V KW KW % V Unit nA mA mA V V V V mA Test Conditions VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -5V, IC = 0 IC = -10 mA, IE = 0 IC = -2 mA, IB = 0 VCC = -5V, VB = -0.05V, RL = 1KW VCE = -5V, IC = -100mA VCC = -50V, VI = 0V IC = 5 mA, IB = -0.25 mA IC = -10mA, IB = -0.3mA IC = -10mA, IB = -1mA IC = -10mA, IB= -5mA IC = -100mA, IB= -5mA IC = -100mA, IB = -10mA IC = -100mA, IB = -10mA VCE = -5V, IC = -1 mA VCE = -5V, IC =- 5 mA VCE = -5V, IC = -50 mA VCE = -5V, IC = -100 mA VCE = -10V, IC = -5 mA VCC = -5V, VB = -2.5V, RL = 1KW VO = -0.3V, IC = -2 mA VI = -5V VCE = -5V, IC = 100mA IC = 1mA, IB = 50mA 3/4 3/4 3/4 DS30871 Rev. 3 - 2 2 of 8 www.diodes.com DCX4710H Electrical Characteristics: Pre-Biased PNP Transistor (Q1) ( Continued ) NEW PRODUCT SMALL SIGNAL CHARACTERISTICS Transition Frequency (gain bandwidth product) Collector capacitance (Ccbo-Output Capacitance) *Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02 fT CC 3/4 3/4 200 5 3/4 3/4 MHz pF VCE = -10V, IE = -5mA, f = 100MHz VCB = -10V, IE = 0A, f = 1MHz Pre-Biased NPN Transistor (Q2) Characteristic OFF CHARACTERISTICS Collector-Base Cut Off Current Collector-Emitter Cut Off Current Emitter-Base Cut Off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Output Off Voltage Input Off Voltage Ouput Current ON CHARACTERISTICS @ TA = 25C unless otherwise specified Symbol ICBO ICEO IEBO V(BR) CBO V(BR) CEO VOH V I(OFF) IO (OFF) Min 3/4 3/4 3/4 50 50 4.6 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ 3/4 3/4 3/4 3/4 3/4 3/4 1.2 3/4 0.06 0.06 0.042 0.026 0.272 0.28 3/4 3/4 3/4 3/4 3/4 58 0.12 1.6 3/4 3/4 3/4 10 1 Max 100 1 500 3/4 3/4 3/4 0.8 1 0.1 0.1 0.06 0.04 0.35 0.35 3.5 3/4 3/4 3/4 3/4 3/4 0.2 3/4 0.88 1.195 1.02 13 1.2 W 3/4 3/4 3/4 3/4 3/4 V V mA V V KW 3/4 V Unit nA mA mA V V V V mA Test Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 5V, IC = 0 IC = 10 mA, IE = 0 IC = 2 mA, IB = 0 VCC = 5V, VB = 0.05V, RL = 1KW VCE = 5V, IC = 100mA VCC = 50V, VI = 0V IC = 5 mA, IB = 0.25 mA IC = 10mA, IB = 0.5mA IC = 10mA, IB = 1mA IC = 10mA, IB= 5mA IC = 100mA, IB= 5mA IC = 100mA, IB = 10mA IC = 100mA, IB = 10mA VCE = 5V, IC = 1 mA VCE = 5V, IC = 5 mA VCE = 5V, IC = 50 mA VCE = 5V, IC = 100 mA VCE = 10V, IC = 5 mA VCC = 5V, VB = 2.5V, RL = 1KW VO = 0.3V, IC = 2 mA VI = 5V VCE = 5V, IC = 100mA IC = 1mA, IB = 50mA 3/4 3/4 VCE = 10V, IE = 5mA, f = 100MHz VCB = 10V, IE = 0A, f = 1MHz Collector-Emitter Saturation Voltage VCE (SAT) Equivalent on-resistance* RCE (SAT) 3/4 12 45 DC Current Gain hFE 130 70 40 Output On Voltage Input On Voltage Input Current Base-Emitter Turn-on Voltage Base-Emitter Saturation Voltage Input Resistor +/- 30% (Base) Resistor Ratio SMALL SIGNAL CHARACTERISTICS Transition Frequency (Gain bandwidth product) Collector capacitance (Ccbo-Output Capacitance) *Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02 VOL VI (ON) Ii VBE(ON) VBE(SAT) R1 (R2/R1) 3/4 2.8 3/4 3/4 3/4 7 0.8 fT CC 3/4 3/4 250 4 3/4 3/4 MHz pF DS30871 Rev. 3 - 2 3 of 8 www.diodes.com DCX4710H Typical Characteristics @ Tamb = 25C unless otherwise specified 250 NEW PRODUCT PD, POWER DISSIPATION (mW) 200 150 100 50 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (C) Fig. 3 Power Derating Curve Characteristics Curves of PNP Transistor (Q1) 0.1 lb = 1.75mA lb = 2.25mA @ Tamb = 25C unless otherwise specified 400 VCE = 5V 0.09 lb = 1.5mA lb = 1.25mA 350 TA = 150 C TA = 125 C TA = 85 C IC, COLLECTOR CURRENT (A) 0.08 0.07 0.06 hFE, DC CURRENT GAIN lb = 2mA 300 250 200 TA = 25 C lb = 0.5mA 0.05 0.04 0.03 lb = 0.75mA lb = 0.25mA 150 TA = -55 C 0.02 0.01 0 0 0.2 0.4 0.6 0.8 100 50 0 lb = 1mA 1 1.2 1.4 1.6 1.8 2 0.1 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 4 VCE vs. IC 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 DC Current Gain vs. IC Ic/Ib = 20 1000 100 Ic/Ib = 10 100 VCE(SAT), COLLECTOR VOLTAGE (V) VCE(SAT), COLLECTOR VOLTAGE (V) 10 10 1 1 TA = 150 C TA = 125 C TA = 150 C TA = 125 C 0.1 TA = 85 C 0.1 TA = -55 C TA = 25 C TA = 85 C TA = -55 C TA = 25 C 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 IC vs. VCE(SAT) 1000 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 IC vs. VCE(SAT) 1000 DS30871 Rev. 3 - 2 4 of 8 www.diodes.com DCX4710H 15 13.5 VCE = 5V 8 Ic/Ib = 20 NEW PRODUCT 7 12 10.5 9 7.5 6 4.5 3 1.5 0 0.1 TA = -55 C TA = 150 C TA = 25 C TA = 125 C TA = 85 C VBE(SAT), BASE-EMITTER VOLTAGE (V) VBE(ON), BASE-EMITTER VOLTAGE (V) 6 5 4 3 2 1 0 TA = -55 C TA = 125 C TA = 85 C TA = 25 C TA = 150 C 1 10 IC, COLLECTOR CURRENT (mA) Fig. 8 IC vs. VBE(ON) 100 0.1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 9 IC vs. VBE(SAT) 100 15 Ic/Ib = 10 TA = -55 C 15 VCE = 0.3V VBE(SAT), BASE-EMITTER VOLTAGE (V) TA = 25 C 9 VI(ON), INPUT VOLTAGE (V) 12 12 TA = 85 C TA = 125 C 9 6 6 TA = 125 C TA = 85 C 3 TA = 150 C 3 TA = 25 C TA = -55 C TA = 150 C 0 0.1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 10 IC vs. VBE(SAT) 100 0 0.1 1 10 100 IC, OUTPUT CURRENT (mA) Fig. 11 Input Voltage vs. Collector Current Characteristics Curves of NPN Transistor (Q2) 300 VCE = 5V @ Tamb = 25C unless otherwise specified 0.1 0.09 lb = 1.5mA lb = 1.25mA lb = 1.75mA lb = 2mA IC, COLLECTOR CURRENT (A) 250 hFE, DC CURRENT GAIN TA = 150 C 0.08 0.07 0.06 0.05 0.04 lb = 0.25mA lb = 0.5mA 200 TA = 125 C 150 TA = 85 C 100 TA = 25 C TA = -55 C 0.03 0.02 0.01 lb = 1mA lb = 0.75mA 50 0 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 12 DC Current Gain vs. IC 1000 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 13 VCE vs. IC DS30871 Rev. 3 - 2 5 of 8 www.diodes.com DCX4710H 100 Ic/Ib = 10 100 Ic/Ib = 20 VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) NEW PRODUCT 10 10 1 TA = 150 C TA = 125 C 1 TA = 150 C TA = 125 C 0.1 0.1 TA = -55 C TA = 25 C TA = 85 C TA = -55 C TA = 25 C TA = 85 C 0.01 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 14 IC vs. VCE(SAT) 0.01 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 15 IC vs. VCE(SAT) 25 22.5 VCE = 5V 30 Ic/Ib = 20 27 20 17.5 15 12.5 10 7.5 5 2.5 0 0.1 TA = -55 C TA = 150 C TA = 25 C TA = 125 C TA = 85 C VBE(SAT), BASE-EMITTER VOLTAGE (V) VBE(ON), BASE-EMITTER VOLTAGE (V) 24 21 18 15 12 9 6 3 0 0.1 TA = -55 C TA = 85 C TA = 25 C TA = 125 C TA = 150 C 1 10 IC, COLLECTOR CURRENT (mA) Fig. 16 IC vs. VBE(ON) 100 1 10 IC, COLLECTOR CURRENT (mA) Fig. 17 IC vs. VBE(SAT) 100 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 30 Ic/Ib = 10 25 22.5 TA = 150 C TA = 125 C 27 24 21 18 15 12 9 6 3 0 0.1 TA = -55 C TA = 25 C TA = 85 C VCE = 0.3V 20 VI(ON), INPUT VOLTAGE (V) 17.5 15 12.5 10 7.5 5 2.5 0 0.1 TA = -55 C TA = 150 C TA = 25 C TA = 85 C TA = 125 C 1 10 IC, COLLECTOR CURRENT (mA) Fig. 18 IC vs. VBE(SAT) 100 1 10 IC, COLLECTOR CURRENT (mA) Fig. 19 Input Voltage vs. Output Current 100 DS30871 Rev. 3 - 2 6 of 8 www.diodes.com DCX4710H Ordering Information (Note 5) Marking Code C02 Packaging SOT-563 Shipping 3000/Tape & Reel NEW PRODUCT Device DCX4710H-7 Notes: 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information C02 = Product Type Marking Code YM = Date Code Marking Y = Year e.g., T = 2006 M = Month e.g., 9 = September C02YM Fig. 20 Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 Apr 4 May 5 2006 T Jun 6 Jul 7 2007 U Aug 8 Sep 9 2008 V Oct O Nov N 2009 W Dec D DS30871 Rev. 3 - 2 7 of 8 www.diodes.com DCX4710H Mechanical Details NEW PRODUCT SOT-563 A Dim A B C D G H K Min 0.15 1.1 1.55 0.9 1.5 0.56 0.15 0.1 Max 0.3 1.25 1.7 0.5 1.1 1.7 0.6 0.25 0.18 Typ 0.25 1.2 1.6 1 1.6 0.6 0.2 0.11 C02YM D G BC K H Fig. 21 M L M L All Dimensions in mm Suggested Pad Layout: (Based on IPC-SM-782) E E Figure 4 Dimensions Z G SOT-563 2.2 1.2 0.375 0.5 1.7 0.5 Z G C X Y C E Y X Fig. 22 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes incorporated. DS30871 Rev. 3 - 2 8 of 8 www.diodes.com DCX4710H |
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