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PHOTODIODE
Si photodiode
S7686
Photodiode with sensitivity close to spectral luminous efficiency
S7686 is a Si photodiode having a spectral response characteristic that is more similar to the human eye sensitivity (spectral luminous efficiency) than our conventional visible-compensated sensors (S1133, etc.).
Features
efficiency Spectral response range: 480 to 660 nm Peak sensitivity wavelength: 550 nm l Ceramic package for reliability l Active area: 2.4 x 2.8 mm l High-speed response: 0.5 s (VR=0 V, RL=1 k) l fs value: 8 % Typ. (vertical light input)
Applications
l Spectral response analogous to CIE spectral luminous
l Illuminometer l Luminance meter
s Absolute maximum ratings (Ta=25 C)
Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 10 -10 to +60 -20 to +70 Unit V C C
s Electrical and optical characteristics (Ta=25 C)
Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Short circuit current Dark current Rise time Terminal capacitance Symbol p S Isc ID tr Ct Condition Min. Typ. 480 to 660 550 0.38 0.45 2 0.5 200 Max. 20 Unit nm nm A/W A pA s pF
=p 100 lx, 2856 K VR=1 V VR=0 V, RL=1 k VR=0 V, f=10 kHz
1
Si photodiode
s Spectral response
0.6 QE=100 % (Typ. Ta=25 C)
S7686
s Spectral response (relative value)
100 S7686 90 (Typ. Ta=25 C)
RELATIVE SENSITIVITY (%)
PHOTO SENSITIVITY (A/W)
0.5
80 70 60 50 40 30 CIE LUMINOUS SPECTRAL EFFICIENCY 20 10
0.4
0.3
0.2
0.1
0 200
400
600
800
1000
1200
0 300
400
500
600
700
800
900
WAVELENGTH (nm)
KSPDB0133EB
WAVELENGTH (nm)
KSPDB0092EB
s Dark current vs. reverse voltage
1 nA (Typ. Ta=25 C)
s Terminal capacitance vs. reverse voltage
10 nF (Typ. Ta=25 C)
TERMINAL CAPACITANCE
0.1 1 10
100 pA
DARK CURRENT
1 nF
10 pA
1 pA
100 pF
100 fA
10 fA 0.01
10 pF 0.1
1
10
REVERSE VOLTAGE (V)
KSPDB0144EA
REVERSE VOLTAGE (V)
KSPDB0145EA
s Dimensional outline (unit: mm, tolerance unless otherwise noted: 0.15)
CATHODE TERMINAL MARK 8.0 - 0.25 ACTIVE AREA 2.8 x 2.4
+0
0.1
FILTER
0.6
0.45 LEAD 5.0 0.2
91
1.5 0.2
PHOTOSENSITIVE SURFACE
6.0 - 0.3
+0.1
KSPDA0089EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2002 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KSPD1040E02 Oct. 2002 DN

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