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IL766B Vishay Semiconductors Optocoupler, Photodarlington Output, AC Input, Internal RBE Features * * * * * * * * * Internal RBE for Better Stability BVCEO < 60 V Isolation Test Voltage, 5300 VRMS AC or Polarity Insensitive Inputs No Base Connection High Insulation Resistance, 1011 Typical Standard Plastic DIP Package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A/C 1 C/A 2 NC 3 6 NC 5C 4E i179040 e3 Pb Pb-free Agency Approvals * UL1577, File No. E52744 System Code H or J, Double Protection * BSI IEC60950 IEC60065 Order Information Part IL766B-1 IL766B-2 IL766B-2X006 Remarks CTR > 400 %, DIP-6 CTR > 900 %, DIP-6 CTR > 900 %, DIP-6 400 mil (option 6) Description The IL766B is a bidirectional input, optically coupled isolator consisting of two Gallium Arsenide infrared emitters and a silicon photodarlington sensor. For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Forward continuous current Power dissipation Derate linearly from 55 C Test condition Symbol IF Pdiss Value 60 200 2.6 Unit mA mW mW/C Output Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Power dissipation Derate linearly from 25 C Test condition Symbol BVCEO BVCBO Pdiss Value 60 70 200 2.6 Unit V V mW mW/C Document Number 83644 Rev. 1.4, 26-Oct-04 www.vishay.com 1 IL766B Vishay Semiconductors Coupler Parameter UL Isolation test voltage Total power dissipation Derate linearly from 25 C Creepage Clearance Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature Operating temperature Lead soldering time at 260 C RIO RIO Tstg Tamb t = 1.0 s Test condition Symbol VISO Ptot Value 5300 250 3.3 7 7 1012 1011 - 55 to + 150 - 55 to + 100 10 VISHAY Unit VRMS mW mW/C min min C C sec. Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Test condition IF 10 mA Symbol VF Min Typ. 1.25 Max 1.5 Unit V Output Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Test condition IC = 10 mA IF = 0 VCE = 10 V, IF = 0 Symbol BVCEO ICEO Min 60 1.0 100 Typ. Max Unit V nA Coupler Parameter Saturation voltage, collectoremitter Test condition IC = 10 mA, IF = 10mA Symbol VCEsat Min Typ. Max 1.0 Unit V Current Transfer Ratio Parameter Current Transfer Ratio Test condition IF = 1.0 mA, VCE = 5.0 V IF = 0.5 mA, VCE = 5.0 V Part IL766B-1 IL766B-2 Symbol CTR CTR Min 400 900 Typ. Max Unit % % www.vishay.com 2 Document Number 83644 Rev. 1.4, 26-Oct-04 VISHAY Switching Characteristics Parameter Turn-off time Test condition VCC = 5.0 V, IF = 2.0 mA, RL = 100 Symbol toff Min Typ. 200 Max IL766B Vishay Semiconductors Unit s Package Dimensions in Inches (mm) pin one ID 3 .248 (6.30) .256 (6.50) 4 2 1 5 6 ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) i178004 .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) .300 (7.62) typ. 18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81) .114 (2.90) .130 (3.0) Option 6 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .255 (6.5) .248 (6.3) 20 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) 18446 Document Number 83644 Rev. 1.4, 26-Oct-04 www.vishay.com 3 IL766B Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 83644 Rev. 1.4, 26-Oct-04 |
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