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| EMC3 / UMC3N / FMC3A Transistors Power management (dual digital transistors) EMC3 / UMC3N / FMC3A Features 1) Both the DTA114E chip and DTC114E chip in a EMT or UMT or SMT package. 2) Ideal for power switch circuits. 3) Mounting cost and area can be cut in half. External dimensions (Units : mm) EMC3 0.22 (4) (3) (2) (5) 0.13 1.2 1.6 (1) Structure Epitaxial planar type NPN / PNP silicon transistor (Built-in resistor type.) Each lead has same dimensions ROHM : EMT5 Abbreviated symbol : C3 UMC3N (4) (3) 0.65 0.65 0.5 1.3 1.1 2.9 0.9 0.5 0.5 1.0 1.6 0.8 0.95 0.95 1.9 (3) 0.2 (5) 0.1Min. 0to0.1 Each lead has same dimensions Equivalent circuit EMC3 / UMC3N (3) (2) (1) ROHM : UMT5 EIAJ : SC-88A Abbreviated symbol : C3 FMC3A (3) (4) (5) FMC3A R1 R2 DTr1 R1 R1=10k R2=10k (1) 0.15 0.3 (2) (4) R1 R2 DTr2 R2 DTr1 R1 R1=10k R2=10k (5) (1) DTr2 (2) 1.6 2.8 (4) 0.3to0.6 0to0.1 Each lead has same dimensions Packaging specifications Package Code Type EMC3 UMC3N FMC3A Basic ordering unit (pieces) T2R 8000 Taping TR 3000 T148 3000 ROHM : SMT5 EIAJ : SC-74A Abbreviated symbol : C3 (5) R2 0.7 The following characteristics apply to both DTr1 and DTr2, however, the "-" sign on DTr2 values for the PNP type have been omitted. 1.25 2.1 0.15 (1) 2.0 (2) EMC3 / UMC3N / FMC3A Transistors Absolute maximum ratings (Ta = 25C) Parameter Supply voltage Input voltage Symbol VCC VIN IO IC (Max.) Power dissipation EMC3, UMC3N FMC3A Tj Tstg Pd Limits 50 40 -10 50 100 150 (TOTAL) 300 (TOTAL) 150 -55+150 C C Unit V V Output current mA mW 1 2 Junction temperature Storage temperature 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. Electrical characteristics (Ta = 25C) Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio Symbol VI (off) VI (on) VO (on) II IO (off) GI fT R1 R2/R1 Min. - 3 - - - 30 - 7 0.8 Typ. - - 0.1 - - - 250 10 1 Max. 0.5 - 0.3 0.88 0.5 - - 13 1.2 Unit V V mA A - MHz k - Conditions VCC=5V, IO=100A VO=0.3V, IO=10mA IO=10mA, II=0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA VCE=10mA, IE=-5mA, f=100MHz - - Transition frequency of the device Electrical characteristic curves DTr1 (NPN) 100 50 VO=0.3V 10m 5m OUTPUT CURRENT : Io (A) VCC=5V 1k 500 DC CURRENT GAIN : GI VO=5V Ta=100C 25C -40C INPUT VOLTAGE : VI (on) (V) 20 10 5 2 1 500m 200m 100m 100 200 500 1m 2m 5m 10m 20m 50m 100m Ta=-40C 25C 100C 2m 1m 500 200 100 50 20 10 5 2 1 0 Ta=100C 25C -40C 200 100 50 20 10 5 2 0.5 1 1.5 2 2.5 3 1 100 200 5001m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) Fig.3 DC current gain vs. output current EMC3 / UMC3N / FMC3A Transistors 1 500m OUTPUT VOLTAGE : VO (on) (V) lO / lI=20 Ta=100C 25C -40C 200m 100m 50m 20m 10m 5m 2m 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current DTr2 (PNP) -100 -50 VO=-0.3V OUTPUT CURRENT : Io (A) -10m -5m -2m -1m -500 -200 -100 -50 -20 -10 -5 -2 -1 0 Ta=100C 25C -40C VCC=-5V 1k 500 DC CURRENT GAIN : GI VO=-5V Ta=100C 25C -40C INPUT VOLTAGE : VI (on) (V) -20 -10 -5 -2 -1 -500m -200m -100m -100- 200 -500-1m -2m -5m -10m -20m -50m -100m Ta=-40C 25C 100C 200 100 50 20 10 5 2 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 1 100 200 5001m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : IO (A) Fig.5 Input voltage vs. output current (ON characteristics) Fig.6 Output current vs. input voltage (OFF characteristics) Fig.7 DC current gain vs. output current -1 -500m OUTPUT VOLTAGE : VO (on) (V) lO/lI=20 Ta=100C 25C -40C -200m -100m -50m -20m -10m -5m -2m -1m -100 -200 -500-1m -2m -5m -10m -20m -50m -100m OUTPUT CURRENT : IO (A) Fig.8 Output voltage vs. output current |
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