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| Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA Features: * * * * * High photo sensitivity Fast response time 0805 package size Phototransistor or Photo Darlington Output Choice of opaque or water clear flat lens OP501,DA OP500,DA Description: Each of these devices consists of a NPN silicon phototransistor mounted in a miniature SMT package with a 0805 size chip carrier that is compatible with most automated mounting and position sensing equipment. Both OP500, OP500DA and OP501, OP501DA have a flat lens. OP501 and OP501DA has an opaque lens that shields the device from stray light, whereas OP500 and OP500DA has a water clear lens. All devices have a wide viewing acceptance angle and higher collector current than devices without lenses especially on the OP500DA and OP501 which incorporate photo darlington die instead on the standard transistor. OP500, OP501, OP500DA and OP501DA are mechanically and spectrally matched to the OP200 series infrared LEDs. Applications: * * * * Non-contact position sensing Datum detection Machine automation Optical encoders Part Number OP500 OP501 OP500DA OP501DA Ordering Information Sensor Phototransistor Photo Darlington Viewing Angle 150 N/A 150 Lead Length OP500, OP501, OP500DA, OP501DA OP500 OP501 1 OP500DA OP501DA 1 SENSOR DICE 2 COLLECTOR 2 Pin # Transistor 1 2 Collector Emitter Recommended Solder Pad Patterns 2a RoHS Moisture OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. -- 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Issue A.4 02/09 Page 1 of 5 Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA Absolute Maximum Ratings (TA=25C unless otherwise noted) Storage Temperature Range Operating Temperature Range Lead Soldering Temperature(1) Collector-Emitter Voltage OP500, OP501 OP500DA, OP501DA Emitter-Collector Voltage Collector Current OP500, OP501 OP500DA, OP501DA Power Dissipation(2) OP500, OP501 OP500DA, OP501DA -40o C to +100o C -25o C to +85o C 260 C 30 V 35 V 5V 20 mA 32 mA 75 mW 100 mW Electrical Characteristics (TA = 25C unless otherwise noted) SYMBOL Input Diode IC(ON) On-State Collector Current OP500, OP501 OP500DA, OP501DA Collector-Emitter Saturation Voltage OP500, OP501 OP500DA, OP501DA Collector-Emitter Dark Current Collector-Emitter Breakdown Voltage OP500, OP501 OP500DA, OP501DA Emitter-Collector Breakdown Voltage OP500, OP501 OP500DA, OP501DA Rise and Fall Times OP500, OP501 OP500DA, OP501DA 0.1 10.0 30 35 5 5 0.3 1.0 100 VCE = 5.0 V, EE = 0.15 mW/cm2 (3) VCE = 5.0 V, EE = 0.15 mW/cm2 (3) IC = 100 A, EE = 1.0 mW/cm2 (3) IC = 1 mA, EE = 0.15 mW/cm2 (3) VCC= 5.0 V (4) IC= 100 A, EE = 0 PARAMETER MIN TYP MAX UNITS TEST CONDITIONS mA VCE(SAT) ICEO VBR(CEO) V nA V VBR(ECO) 15 50 60 V IE= 100 A, EE = 0 IC= 100 A, EE = 0 IC= 1 mA, RL = 1K IC= 1 mA, RL = 1K tr, tf s Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. Derate linearly at 2.17 mW/ C above 25 C. 3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. 4. To calculate typical collector dark current in A, use the formulate ICEO = 10(0.04 t - 3/4), where TA is the ambient temperature in C. OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A.4 02/09 Page 2 of 5 OPTEK Technology Inc. -- 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA Relative Response vs. Wavelength 100% 80% Relative Response 60% OP500, OP500DA 40% OP501, OP501DA 20% 0% 400 500 600 700 800 900 1000 1100 Wavelength (nm) OP500, OP501 Relative On-State Collector Current - Ic (mA) vs. Collector-Emitter Voltage--VCE (V) 2.00 1.80 3 mW/cm2 Collector-Emitter Dark Current vs. Temperature-TA 1000 Conditions: Ee = 0 mW/cm2 VCE = 10V IC(ON) - On-State Collector Current (mA) Collector-Emitter Dark Current (nA) 1.60 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0 1 2 3 0.5 mW/cm2 1.0 mW/cm2 2.5 mW/cm2 2 mW/cm2 100 10 1.5 mW/cm2 1 0 -25 0 25 50 75 100 4 5 Temperature--(C) Collector-Emitter Voltage (V) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. -- 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Issue A.4 02/09 Page 3 of 5 Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA OP500, OP501 Relative On-State Collector Current vs. Irradiance--Ee (mW/cm2) 160% 140% Normalized at Ee = 5mW/cm2 Conditions: VCE = 5V, = 935nm, TA = 25 C Relative On-State Collector Current-IC (mA) vs. Temperature-TA 140% 130% Normalized at TA = 25C . Conditions: VCE = 5V, = 935nm, TA = 25 C Relative Collector Current 120% 100% 80% 60% 40% 20% Relative Collector Current 5.0 6.0 2 120% 110% 100% 90% 80% 70% 0 1.0 2.0 3.0 4.0 7.0 8.0 -25 0 25 50 75 100 Ee--Irradiance (mW/cm ) Temperature--(C) OP500DA, OP501DA Collector-Emitter Dark Current vs. Temperature-TA 1000 Relative On-State Collector Current - Ic (mA) vs. Collector-Emitter Voltage--VCE (V) 30 1.2 mW/cm2 IC(ON) - On-State Collector Current (mA) Conditions: Ee = 0 mW/cm2 VCE = 10V Collector-Emitter Dark Current (nA) 25 20 1.0 mW/cm2 100 0.8 mW/cm2 17.5 0.6 mW/cm2 10 15.0 0.4 mW/cm2 1 12.5 10.0 0.2 mW/cm2 0 -25 0 25 50 75 100 0 0.5 1.0 1.5 2.5 3 Temperature--(C) Collector-Emitter Voltage (V) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A.4 02/09 Page 4 of 5 OPTEK Technology Inc. -- 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA OP500DA, OP501DA Relative On-State Collector Current vs. Irradiance--Ee (mW/cm2) 160% 140% 120% 100% 80% 60% 40% Normalized at Ee = 1mW/cm2 Conditions: VCE = 5V, = 935nm, TA = 25 C Relative On-State Collector Current-IC (mA) vs. Temperature-TA 140% 130% Normalized at TA = 25C . Conditions: VCE = 5V, Relative Collector Current--% Relative Collector Current--% 0.50 1.0 1.5 2 120% 110% 100% 90% 80% 70% 0 2.0 -25 0 25 50 75 100 Irradiance- Ee(mW/cm ) Temperature--(C) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. -- 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Issue A.4 02/09 Page 5 of 5 |
Price & Availability of OP500
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