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| IL350/351/358/359 High Performance Linear Optocoupler for Optical DAA in Telecommunications FEATURES * 2.0 mm High SMT Package * High Sensitivity (K1) at Low Operating LED Current * Couples AC and DC Signals * Low Input-Output Capacitance * Isolation Voltage, 3000 VRMS * Low Distortion APPLICATIONS * Optical DAA for V.34 FAX/Modem PCMCIA Cards * Digital Telephone Line Isolation DESCRIPTION The IL350/1/8/9 family of Linear Optocoupler consist of an IRLED optically coupled to two photodiodes. The emitter mechanically faces both diodes enabling them to receive approximately an equal amount of infrared light. The diodes produce a proportional amount of photocurrents. The ratio of the photocurrents stays constant with high accuracy when either the LED current changes or the ambient temperature changes. Thus one can control the output diode current optically by controlling the input photodiode current. The IL350/1/8/9 optocouplers can be used with the aid of operational amplifiers in closed loop conditions to achieve highly linear and electrically isolated AC and or DC signal amplifiers. .043 (1.08) .033 (.83) .050 (1.25) Typ. Dimensions in Inches (mm) K1 .336 (8.4) .010 (.25) .225 (5.6) .215 (5.4) A2 K3 A4 .230 (5.75) .220 (5.5) .015 (.375) .002 (.050) .042 (1.05) Ref. .091 (2.3) .083 (2.1) .016 (.41) Typ. 10 Typ. .291 (7.39) 010 (.254) .015 (.375) .002 (.050) 40 3-7 8K 7A 6 N.C 5 N.C Pin One ID .006 (.15) Typ. Absolute Maximum Ratings Maximum Ratings Emitter Reverse Voltage..........................................................................................3.0 V Forward Current ...................................................................................... 30 mA Surge Current, Pulse Width <10 s ....................................................... 150 mA Power Dissipation, TA=25C .................................................................150 mW Derate Linearly from 25C .................................................................2.0 mW/C Detector Reverse Voltage ..........................................................................................15 V Power Dissipation ....................................................................................50 mW Derate Linearly from 25C ...............................................................0.65 mW/C Junction Temperature ...............................................................................100C Coupler Isolation Test Voltage, t=1.0 sec. ..................................................... 3000 VRMS Total Package Power Dissipation .........................................................250 mW Derate Linearly from 25C .................................................................2.8 mW/C Storage Temperature Range....................................................-40C to +150C Operating Temperature...............................................................................75C Lead Soldering Time at 260C ............................................................... 10 sec. Isolation Resistance VIO=500 V, TA=25C ........................................................................... 1012 VIO=500 V, TA=100C ......................................................................... 1011 2000 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) OSRAM Opto Semiconductors GmbH & Co. OHG * Regensburg, Germany www.osram-os.com * +49-941-202-7178 1 March 8, 2000-01 Electrical Characteristics TA=25C LED Emitter Forward Voltage Reverse Current VF Temperature Coefficient Junction Capacitance Dynamic Resistance Switching Time IL358/9 Symbol Min. -- -- -- -- -- -- -- Typ. 1.8 .01 -2.2 15 6.0 40 40 Max. 2.1 10 -- -- -- -- -- Units V A mV/C pF Test Conditions VF IR VF/C IF=10 mA VR=3.0 V -- CJ VF/IF VF=0 V, f=1.0 MHz IF=2.5 mA IF=1.0 mA ns ns tf tr Detector Junction Capacitance NEP AC Characteristics Photovoltaic Mode Frequency Response Phase Response Rise Time Package Input-Output Capacitance Common Mode Capacitance IL358/9 BW(-3dB) -- -- -- -- -- 1.0 45 350 -- -- -- MHz Deg. ns CJ -- -- -- 12 <4 -14 -- -- pF W/Hz VF=0 V, f=1.0 MHz VDET=0 V IP1=25 A Modulation current IP1=6.0 A CIO Ccm -- -- 1.0 0.5 -- -- pF pF VF=0 V, f=1.0 MHz VF=0 V, f=1.0 MHz K3 Bins Coupled Characteristics K1 at IF=2.0 mA, VD=0 V Min. IL350 IL351 IL358 IL359 0.003 0.005 0.008 0.008 Typ. -- -- -- -- Max. -- -- -- -- A-J D, E, F, G C,D, E, F, G, H E, F Bin Table Bin A B C D E F G H I J Min. 0.557 0.620 0.690 0.765 0.851 0.945 1.051 1.169 1.297 1.442 Max. 0.626 0.696 0.773 0.859 0.955 1.061 1.181 1.311 1.456 1.618 2000 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) OSRAM Opto Semiconductors GmbH & Co. OHG * Regensburg, Germany www.osram-os.com * +49-941-202-7178 IL350/351/358/359 2 March 8, 2000-01 |
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