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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TRANSISTORNPN (c) TO 92 FEATURES Power dissipation PCM : 0.625 W Tamb=25ae(c) Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(c) 1 DC current gain hFE(c) 2 Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) 1.EMITTER 2. COLLECTOR 3.BASE 123 unless Test otherwise MIN 40 25 5 specified(c) TYP MAX UNIT V V V 0.1 0.1 0.1 |I A |I A |I A conditions Ic= 100|I , IE=0 A Ic= 1 mA IB=0 IE= 100|I A IC=0 VCB= 40 V , VCE= 20 V , IE=0 IB=0 VEB= 3 V IC=0 VCE= 1 V, IC= 50m A VCE= 1 V, IC= 500m A IC=500mA, IB=50 mA IC=500mA, IB=50 mA VCE= 6 V, IC=20mA 85 50 300 0.6 1.2 V V Transition frequency fT f =30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank Range B 85-160 C 120-200 D 160-300 |
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