 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| an =y AMPFE comDanv RF MOSFET Power 100 - 500 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor .. Transistor, 4OW, 28V UF284OP Absolute Maximum Ratings at 25C Parameter Symbol Rating Units i D i 627 i 6.33 1 247 1 257 1 H J ] 1 1.40 292 1 I 165 3.M 1 I 055 115 1 I .D65 325 Electrical Characteristics at 25C input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance * Per Side C ISS C oss C RSS GP qD - ) 45 30 a pF pF PF dB % - Vg28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V, F=l .O MHz' V, F=l .O MHz' V, F=l .O MHz' V, 1,,=500.0 mA, P,fi40.0 V, 1,,=500.0 mA, Po,,=40.0 V, 1,,=500.0 mA, P,,g40.0 W. F=500 MHz W, F=500 MHz W, F=500 MHz 10 50 - 2O:l VSWR-T Specifications Subject to Change Without Notice. MIA-COM, Inc. RF MOSFET Power Transistor, 4OW, 28V U F284OP v2.00 Typical Broadband Performance Curves CAPACITANCES 40 vs VOLTAGE 50 POWER OUTPUT vs VOLTAGE P,,=3.0 W I,,=500 mA F=500 MHz Fz1.0 MHz g f L 2 5 10 55 4o 30 20 E C RSS 10 / 0 15 "2, (") 20 25 30 5 10 15 20 25 30 35 5 10 v,, (") GAIN vs FREQUENCY 30 v.,,=28 EFFICIENCY 65 - vs FREQUENCY mA P,,,=40 W V I,,=500 mA PO,,=40 W V,,=28 V I,,=500 6 c kii 55. c J 100 200 3w 400 500 50 . loo 200 3430 400 500 FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT 60 vs POWER INPUT mA VD,=28 V I,,=500 1 J 0.1 0.25 1 2 2.5 POWER INPUT (W) Specifications Subject to Change Without Notice. M/A-COM, inc. RF MOSFET Power Transistor, 4OW, 28V UF284OP v2.00 Typical Device Impedance Frequency 100 300 500 (MHz) 4, (OHMS) 6.0 - j 20.0 2.5 - j 5.5 4.0 + j 3.0 V,,=28 V, I,,=500 mA, P,,,=40.0 Watts Z LOAD (OHMS) 25.0 + j 27.0 13.0 + j 13.0 12.0 + j 5.0 Z,, is the series equivalent `. T input impedance of the device from gate to gate. as measured from drain to drain. Z LcAD the optimum series equivalent is load impedance RF Test Fixture PARTS c3s c6 : 2 7. 2 12 13 c7, 9, 10 It 14, 1s a9 a6 22 22' L I ST WpF UJJ PC la Pf 470 pf 815 uf 10 uf Louf Lu 14 Ll2 13 L7, lo 28" L4 u2 0 SOUfSOV. lOOW42SV. 270 tl+f ZS V. 2.wlF25oNNsmr-RmDco~ 7 TlRdS 5 NO. e2 AVG VIRE lsTum5ra22AvGvw x5* ff so m-04 l%NSUSSION UNE Es'ffsomMTR-uNE ~ff5OpUTRAND(Issar(LIK 35'~50U+MTRCIE(OOSSWLlX .SVFSOOTR-UN uf2e4oP Specifications Subject to Change Without Notice. MIA-COM, Inc. |
Price & Availability of UF284OP
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |