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| www..com SMD Type P-Channel 1.8-V (G-S) MOSFET KI4433DY IC IC Features TrenchFET Power MOSFETS Fast Switching 100% Rg Tested Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation * TA = 25 TA = 85 Operating Junction and Storage Temperature Range * Surface Mounted on 1" X 1" FR4 Board. TJ, Tstg )* TA = 25 TA = 85 IDM IS PD -2.1 2.5 1.3 -55 to 150 Symbol VDS VGS ID -3.9 -2.8 -10 -1.2 1.4 A W 10 secs Steady State -20 8 -2.9 -2.1 A Unit V Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient * Maximum Junction-to-Foot(Drain) * Surface Mounted on 1" X 1" FR4 Board. t 10 sec Symbol RthJA RthJF Typical 40 75 19 Maximum 50 90 25 /W Unit Steady State Steady State www.kexin.com.cn 1 www..com SMD Type KI4433DY Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current* Symbol VGS(th) IGSS IDSS ID(on) Testconditons VDS = VGS, ID = -250 VDS = 0 V, VGS = 8V A Min -0.45 Typ Max -1.0 100 -1 -5 -10 0.095 0.137 0.205 7 -0.8 5.1 VDS = -10 V, VGS = -4.5 V, ID = -2.7A 1.2 1.0 3 6 16 VDD = -10 V, RL = 10 ID = -1 A, VGEN = -4.5 V, RG = 6 30 30 27 IF = -0.9 A, di/dt = 100 A/ 2%. s 20 9.7 25 45 45 40 40 -1.2 7.7 0.110 0.160 0.24 IC IC Unit V nA A A A VDS = -20 V, VGS = 0 V VDS =-20 V, VGS = 0 V, TJ =85 VDS - 5 V, VGS =- 4.5 V VGS = -4.5 V, ID = -2.7 A Drain-Source On-State Resistance rDS(on) VGS = -2.5 V, ID = -2.2A VGS = -1.8V, ID = -1 A Forward Transconductance * Schottky Diode Forward Voltage * Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width 300 s, duty cycle gfs VSD Qg Qgs Qgd Rg td(on) tr td(off) tf trr VDS = -10 V, ID = -2.7 A IS = -0.9A, VGS = 0 V S V nC nC nC ns ns ns ns ns 2 www.kexin.com.cn |
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