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| PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL 1mA Mounting torque Terminal connection torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C IXFN32N100P VDSS ID25 RDS(on) trr = = 1000V 27A 320m 300ns Maximum Ratings 1000 1000 30 40 27 75 16 1.5 20 690 -55 ... +150 150 -55 ... +150 300 2500 3000 1.5/13 1.3/11.5 30 V V V V A A A J V/ns W C C C C V~ V~ Nm/lb.in. Nm/lb.in. g miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features International standard package Encapsulating epoxy meets UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect t = 1min t = 1s Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 16A, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 1000 3.5 6.5 200 V V nA Applications Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor controls Robotics and servo controls 50 A 2.5 mA 320 m (c) 2008 IXYS CORPORATION, All rights reserved DS99880A(4/08) IXFN32N100P Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 16A Gate input resistance VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 16A, Note 1 Characteristic Values Min. Typ. Max. 13 21 14.2 815 60 1.50 50 S nF pF pF ns ns ns ns nC nC nC 0.18 C/W C/W SOT-227B Outline Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 16A RG = 1 (External) 55 76 43 225 85 94 Source-Drain Diode TJ = 25C unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 16A, -di/dt = 100A/s VR = 100V Characteristic Values Min. Typ. Max. 32 128 1.5 300 2.2 15 A A V ns C A Note 1: Pulse test, t 300s; duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN32N100P Fig. 1. Output Characteristics @ 25C 32 28 24 9V VGS = 15V 10V 70 60 50 VGS = 15V 10V Fig. 2. Extended Output Characteristics @ 25C ID - Amperes 20 16 8V 12 8 4 0 0 1 2 3 4 5 6 7 8 9 10 7V ID - Amperes 40 30 20 10 0 0 5 10 15 9V 8V 7V 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125C 32 28 24 VGS = 15V 10V 9V 3.0 2.8 2.6 Fig. 4. RDS(on) Normalized to ID = 16A Value vs. Junction Temperature VGS = 10V RDS(on) - Normalized 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 I D = 32A I D = 16A ID - Amperes 8V 20 16 12 8 4 0 0 2 4 6 8 10 12 14 16 18 20 22 6V 7V 0.6 0.4 -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to I D = 16A Value vs. Drain Current 2.6 2.4 2.2 TJ = 125C 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -50 Fig. 6. Maximum Drain Current vs. Case Temperature RDS(on) - Normalized 1.8 1.6 1.4 1.2 1 0.8 0 VGS = 10V 15V - - - - TJ = 25C 5 10 15 20 25 30 35 40 45 50 55 60 65 ID - Amperes 2 -25 0 25 50 75 100 125 150 ID - Amperes TC - Degrees Centigrade (c) 2008 IXYS CORPORATION, All rights reserved IXFN32N100P Fig. 7. Input Admittance 40 35 30 25 20 15 10 5 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 TJ = 125C 25C - 40C 40 35 30 Fig. 8. Transconductance g f s - Siemens ID - Amperes 25 20 15 10 5 0 0 5 10 15 20 25 30 35 40 TJ = - 40C 25C 125C VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 90 80 70 16 14 12 VDS = 500V I D = 16A I G = 10mA Fig. 10. Gate Charge IS - Amperes 60 50 40 30 20 10 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 TJ = 125C TJ = 25C VGS - Volts 10 8 6 4 2 0 0 50 100 150 200 250 300 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance 100,000 Fig. 12. Maximum Transient Thermal Impedance 1.000 f = 1 MHz Ciss Capacitance - PicoFarads 10,000 Coss 1,000 Z(th)JC - C / W 25 30 35 40 0.100 100 Crss 0.010 10 0 5 10 15 20 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 VDS - Volts Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_32N100P(96)3-28-08-C |
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