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Datasheet File OCR Text: |
All Bond Pads = 0.004" Sq. Substrate is also Gate. At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Drain Source ON Resistance Input Capacitance Feedback Capacitance gfs rds(on) Ciss Crss 22 40 6.5 2.5 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 5 -1 Min - 25 Typ - 40 - 10 - 100 90 - 5.5 Max Unit V pA mA V NJ72 Process Test Conditions IG = - 1 A, VDS = OV VGS = - 15V, VDS = OV VDS = 15V, VGS = OV VDS = 15V, ID = 1 nA VDS = 15V, VGS = OV ID = 1 mA, VGS = OV VDS = OV, VGS = - 10V VDS = OV, VGS = - 10V f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.co Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Drain Source (on) Resistance in Drain Saturation Current in mA 100 80 60 40 20 80 70 60 50 40 30 20 10 0 -1 Rds as a Function of VGS(OFF) 0 -1 -2 -3 -4 -5 -6 -2 -3 -4 -5 Drain Source Cutoff Voltage in Volts Drain Source Cutoff Voltage in Volts Input Capacitance as a Function of VGS 15 13 VDS = O V 11 9 7 5 0 -4 -8 - 12 - 16 Gate Source Voltage in Volts VDS = 5 V VDS = 10 V Feedback Capacitance in pF Input Capacitance in pF 7 6 5 4 Feedback Capacitance as a Function of VG VDS = O V VDS = 5 V VDS = 10 V 3 2 0 -4 -8 - 12 Gate Source Voltage in Volts |
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