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| 2SJ333(L), 2SJ333(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 23 2SJ333(L), 2SJ333(S) Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch Tstg 2 1 Ratings -30 20 -7 -28 -7 20 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr -30 20 -- -- -1.0 -- -- 4 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.1 0.15 6 755 495 210 12 50 120 120 -1.1 100 Max -- -- 10 -100 -2.5 0.14 0.22 -- -- -- -- -- -- -- -- -- -- Unit V V A A V 1/2 1/2 S pF pF pF ns ns ns ns V s IF = -7 A, VGS = 0 IF = -7 A, VGS = 0, diF/dt = 50 A/s ID = -4 A, VGS = -10 V, RL = 7.5 1/2 Test conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -25 V, VGS = 0 ID = -1 mA, VDS = -10 V ID = -4 A, VGS = -10 V* ID = -4 A, VGS = -4 V* VDS = -10 V, VGS = 0, f = 1 MHz 1 1 Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test ID = -4 A, VDS = -10 V* 1 2 2SJ333(L), 2SJ333(S) Power vs. Temperature Derating 40 Pch (W) Maximum Safe Operation Area -100 10 s DC 30 I D (A) -30 -10 100 s 1 Channel Dissipation 20 10 Drain Current 50 100 150 Tc (C) 200 Case Temperature ms P 10 W = Op ms era (1s tio ho n( t) Tc -3 Operation in this =2 5 area is limited C) -1 by R DS(on) -0.3 Ta = 25 C -0.1 -0.5 -1 -2 -50 5 -10 -20 Drain to Source Voltage V DS (V) 0 Typical Output Characteristics -10 -10 V -5 V -4.5 V -4 V Typical Transfer Characteristics -10 Tc = 25 C Pulse Test -3.5 V (A) I D (A) -8 -8 -25 C 75 C -6 -3 V -4 -2.5 V VGS = -2 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) ID Drain Current Drain Current -6 V DS = -10 V Pulse Test -4 -2 -2 0 -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) 3 2SJ333(L), 2SJ333(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test Drain to Source On State Resistance R DS(on) ( ) -1.0 Drain to Source Saturation Voltage V DS(on) (V) Static Drain to Source on State Resistance vs. Drain Current 5 2 1 0.5 Pulse Test -0.8 -0.6 I D = -5 A -0.4 -2 A -1 A 0 -4 -8 12 Gate to Source Voltage -16 -20 V GS (V) 0.2 0.1 VGS = -4 V -10 V -0.2 0.05 -0.1 -0.3 -1 -3 -10 -30 Drain Current I D (A) -100 Static Drain to Source on State Resistance R DS(on) ( ) Pulse Test 0.32 I D = -5 A V GS = -4 V 0.16 -1 A -2 A Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.40 Forward Transfer Admittance vs. Drain Current 50 20 10 5 Tc = 25 C 75 C 2 1 0.5 -10 V DS = -10 V Pulse Test -25 C 0.24 0.08 0 -40 V GS = -10 V I D = -1 A -2 A -5 A 0 40 80 120 160 Case Temperature Tc (C) -0.2 -0.5 -1 -2 -5 Drain Current I D (A) -10 4 2SJ333(L), 2SJ333(S) Body-Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) Capacitance C (pF) Typical Capacitance vs. Drain to Source Voltage 10000 200 100 50 VGS = 0 f = 1 MHz 3000 1000 Ciss Coss 20 10 di / dt = 50 A / s VGS = 0, Ta = 25 C 300 Crss 100 5 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 Reverse Drain Current I DR (A) 0 -10 -20 -30 -40 -50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics V GS (V) 0 V DS (V) 0 V DD = -25 V -10 V 500 200 100 50 20 10 -20 V DS -40 V DD = -25 V -10 V -4 Switching Time t (ns) V GS = -10 V, V DD = -30 V PW = 5 s, duty < 1 % t d(off) tf tr t d(on) Drain to Source Voltage -8 -60 I D = -7 A -80 V GS -12 -16 -20 -40 Gate to Source Voltage -100 0 -8 -16 -24 -32 Gate Charge Qg (nc) 5 -0.1 -0.2 -0.5 -1 -2 -5 Drain Current I D (A) -10 5 2SJ333(L), 2SJ333(S) Reverse Drain Current vs. Source to Drain Voltage -20 Reverse Drain Current I DR (A) Pulse Test -16 -12 -10 V -5 V -8 V GS = 0, 5 V -4 0 -0.4 -0.8 -1.2 -1.6 V DS (V) -2 Drain to Source Voltage Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.2 0.1 0.05 0.02 0.0 1 0.3 0.1 ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C uls e PDM PW T 0.03 1s h P ot D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 6 2SJ333(L), 2SJ333(S) Switching Time Test Circuit Vin Monitor D.U.T. RL 90% Vin 50 -10 V V . DD = 30 V . Vout td(on) 90% 10% tr td(off) 90% 10% tf Vout Monitor Vin 10% Waveforms 7 2SJ333(L), 2SJ333(S) When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 8 |
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