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| 2SJ333 L , 2SJ333 S Silicon P-Channel MOS FET Application DPAK-1 High speed power switching 4 4 Features Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V Source * Suitable for Switching regulator, DC - DC converter * * * * 12 2, 4 3 12 1 3 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings -30 20 -7 -28 -7 20 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25C 2SJ333 L , 2SJ333 S Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min -30 Typ -- Max -- Unit V Test conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -25 V, VGS = 0 ID = -1 mA, VDS = -10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- -1.0 -- -- -- -- 0.1 10 -100 -2.5 0.14 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = -4 A VGS = -10 V * ID = -4 A VGS = -4 V * ID = -4 A VDS = -10 V * VDS = -10 V VGS = 0 f = 1 MHz ID = -4 A VGS = -10 V RL = 7.5 ------------------------------------------------ -- 0.15 0.22 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 4 6 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 755 495 210 12 50 120 120 -1.1 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = -7 A, VGS = 0 IF = -7 A, VGS = 0, diF / dt = 50 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 100 -- s -------------------------------------------------------------------------------------- 2SJ333 L , 2SJ333 S Power vs. Temperature Derating 40 Pch (W) -100 I D (A) -30 -10 Maximum Safe Operation Area 10 s DC 100 s 1 30 Channel Dissipation 20 10 Drain Current 50 100 150 Tc (C) 200 Case Temperature Typical Output Characteristics ms P 10 W = Op ms era (1s tio ho n( t) Tc -3 Operation in this =2 5 area is limited C) -1 by R DS(on) -0.3 Ta = 25 C -0.1 -0.5 -1 -2 -50 5 -10 -20 Drain to Source Voltage V DS (V) 0 -10 -10 V -5 V -4.5 V -4 V Typical Transfer Characteristics -10 Tc = 25 C (A) -8 -25 C 75 C Pulse Test -3.5 V I D (A) -8 -6 -3 V -4 -2.5 V VGS = -2 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) ID Drain Current -6 V DS = -10 V Pulse Test Drain Current -4 -2 -2 0 -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) 2SJ333 L , 2SJ333 S Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test Drain to Source On State Resistance R DS(on) ( ) -1.0 Drain to Source Saturation Voltage V DS(on) (V) Static Drain to Source on State Resistance vs. Drain Current 5 2 1 0.5 Pulse Test -0.8 -0.6 I D = -5 A -0.4 -2 A -1 A 0 -4 -8 12 Gate to Source Voltage -16 -20 V GS (V) 0.2 0.1 VGS = -4 V -10 V -0.2 0.05 -0.1 -0.3 -1 -3 -10 -30 Drain Current I D (A) -100 Static Drain to Source on State Resistance R DS(on) ( ) Pulse Test 0.32 I D = -5 A V GS = -4 V 0.16 -1 A -2 A Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.40 Forward Transfer Admittance vs. Drain Current 50 20 10 5 Tc = 25 C 75 C 2 1 0.5 -10 V DS = -10 V Pulse Test -25 C 0.24 0.08 0 -40 V GS = -10 V I D = -1 A -2 A -5 A 0 40 80 120 160 Case Temperature Tc (C) -0.2 -0.5 -1 -2 -5 Drain Current I D (A) -10 2SJ333 L , 2SJ333 S Body-Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) Capacitance C (pF) Typical Capacitance vs. Drain to Source Voltage 10000 200 100 50 VGS = 0 f = 1 MHz 3000 1000 Ciss Coss 20 10 di / dt = 50 A / s VGS = 0, Ta = 25 C 300 Crss 100 5 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 Reverse Drain Current I DR (A) 0 -10 -20 -30 -40 -50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V DD = -25 V -10 V -4 V DS -40 V DD = -25 V -10 V V GS (V) 0 0 Switching Characteristics 500 200 100 50 20 10 5 -0.1 -0.2 -0.5 -1 -2 -5 Drain Current I D (A) -10 V GS = -10 V, V DD = -30 V PW = 5 s, duty < 1 % t d(off) tf tr t d(on) Drain to Source Voltage -8 -60 I D = -7 A -80 V GS -12 -16 -20 -40 -100 0 -8 -16 -24 -32 Gate Charge Qg (nc) Gate to Source Voltage Switching Time t (ns) -20 2SJ333 L , 2SJ333 S Reverse Drain Current vs. Source to Drain Voltage -20 Reverse Drain Current I DR (A) Pulse Test -16 -12 -10 V -5 V -8 V GS = 0, 5 V -4 0 -0.4 -0.8 -1.2 -1.6 V DS (V) -2 Drain to Source Voltage Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.2 0.1 0.05 0.02 0.0 1 0.3 0.1 ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C Pu lse PDM PW T 0.03 1s t ho D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 2SJ333 L , 2SJ333 S Switching Time Test Circuit Vin Monitor D.U.T. RL Vout Monitor Vin 10% Waveforms 90% Vin 10 V 50 V DD = 30 V Vout td(on) 90% 10% tr td(off) 90% 10% tf |
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