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| Excelics DATA SHEET * * * * * * +29.0dBm TYPICAL OUTPUT POWER 9.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 1600 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 30mA PER BIN RANGE 50 D D EFA160A Low Distortion GaAs Power FET 840 116 D D 48 340 100 40 S 95 G S 80 G 50 S G S G S ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss Saturated Drain Current Transconductance Pinch-off Voltage f=12GHz f=18GHz f=12GHz f=18GHz f=12GHz Chip Thickness: 75 13 microns All Dimensions In Microns MIN 27.0 7.0 TYP 29.0 29.0 9.0 6.5 34 MAX UNIT dBm dB % Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=4.0mA 260 180 420 240 -2.0 600 mA mS -3.5 V V V o Drain Breakdown Voltage Igd=1.6mA Source Breakdown Voltage Igs=1.6mA Thermal Resistance (Au-Sn Eutectic Attach) -12 -7 -15 -14 30 C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -4V Vgs Drain Current Idss 475mA Ids Forward Gate Current 40mA 7mA Igsf Input Power 28dBm @ 3dB Compression Pin Channel Temperature 175oC 150oC Tch Storage Temperature -65/175oC -65/150oC Tstg Total Power Dissipation 4.5W 3.8W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com EFA160A DATA SHEET Low Distortion GaAs Power FET S-PARAMETERS FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 Note: --- S11 --MAG ANG 0.936 -81.9 0.911 -119.8 0.903 -138.7 0.903 -149.8 0.900 -157.8 0.903 -162.4 0.905 -165.8 0.908 -168.0 0.913 -170.0 0.914 -171.8 0.918 -173.7 0.920 -175.2 0.924 -177.4 0.925 -179.9 0.925 177.5 0.929 174.2 0.927 171.0 0.928 167.6 0.927 164.8 0.931 162.1 0.945 162.3 0.951 161.1 0.960 159.9 0.961 159.6 0.973 159.3 0.969 159.6 8V, 1/2 Idss --- S21 ----- S12 --MAG ANG MAG ANG 9.025 133.3 0.035 48.7 5.964 108.8 0.047 27.7 4.275 94.5 0.050 18.4 3.297 84.3 0.050 13.0 2.644 75.5 0.049 9.3 2.207 68.6 0.048 6.4 1.884 62.3 0.047 5.6 1.640 56.4 0.046 3.6 1.451 51.2 0.044 3.1 1.297 46.2 0.042 3.9 1.172 41.0 0.041 3.2 1.067 36.1 0.039 2.6 0.977 31.0 0.038 2.9 0.901 25.9 0.038 1.8 0.836 20.8 0.038 1.6 0.775 15.4 0.038 0.7 0.721 10.0 0.037 1.5 0.670 4.6 0.037 2.2 0.626 -0.6 0.037 1.4 0.580 -5.4 0.037 1.0 0.502 -9.7 0.036 2.4 0.469 -13.0 0.033 2.9 0.433 -16.9 0.035 5.0 0.409 -20.1 0.037 8.9 0.391 -22.7 0.037 10.9 0.368 -24.8 0.039 10.8 --- S22 --MAG ANG 0.221 -106.2 0.285 -132.0 0.319 -141.6 0.347 -145.0 0.382 -147.5 0.413 -148.0 0.445 -148.7 0.476 -149.5 0.510 -150.4 0.536 -151.0 0.563 -152.2 0.592 -153.8 0.612 -155.2 0.635 -157.2 0.653 -159.4 0.675 -161.8 0.688 -164.7 0.706 -167.7 0.721 -171.1 0.738 -174.6 0.771 -178.4 0.786 178.6 0.803 176.2 0.821 174.3 0.831 172.5 0.849 170.6 The data included 0.7 mils diameter Au bonding wires: 4 gate wires, 15 mils each; 4 drain wires, 20 mils each; 10 source wires, 7 mils each. |
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