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| IGBT MODULE ( N series ) n Features * Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Improved FWD Characteristic * Minimized Internal Stray Inductance * Overcurrent Limiting Function (4~5 Times Rated Current) n Outline Drawing n Applications * High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply n Maximum Ratings and Characteristics * Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Terminals *3 Ratings 1200 20 300 600 300 600 2100 +150 -40 +125 2500 3.5 4.5 1.7 Units V V A W C C V Nm n Equivalent Circuit Note: *1:Recommendable Value; 2.5 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 4.5 Nm (M6) *3:Recommendable Value; 1.3 1.7 Nm (M4) * Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE= 20V VGE=20V IC=300mA VGE=15V IC=300A VGE=0V VCE=10V f=1MHz VCC=600V IC=300A VGE= 15V RG=2.7 IF=300A VGE=0V IF=300A Min. Typ. Max. 4.0 60 7.5 3.3 Units mA A V V pF 1.2 0.6 1.5 0.5 3.0 350 4.5 48000 17400 15480 0.65 0.25 0.95 0.35 s V ns * Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.06 0.17 Units C/W 0.0125 Collector current vs. Collector-Emitter voltage T j=25C V GE = 20V, 15V, 12V, 10V 600 600 Collector current vs. Collector-Emitter voltage T j=125C V GE = 20V, 15V, 12V, 10V [A] C Collector current : I Collector current : I 400 C [A] 400 8V 200 200 8V 0 0 1 2 3 4 Collector-Emitter voltage : V CE [V] 5 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] Collector-Emitter vs. Gate-Emitter voltage T j=25C 10 10 Collector-Emitter vs. Gate-Emitter voltage T j=125C [V] CE Collector-Emitter voltage :V 6 IC= 4 600A 300A 2 150A 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] Collector-Emitter voltage V CE 8 [V] 8 6 I C= 4 600A 2 300A 150A 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current V CC =600V, R G=2.7 , V GE =15V, Tj=25C Switching time vs. Collector current V CC =600V, R G =2.7 , V GE 15V, Tj=125C t off 1000 t off 1000 t on tf tr [nsec] on, t r, t off, t f tr Switching time : t 10 0 200 400 600 Collector current : I C [A] Switching time : t 100 on, t r, t off, t f tf [nsec] 100 10 0 t on 200 400 600 Collector current : I C [A] Switching time vs. R G V CC =600V, I C =300A, V GE =15V, Tj =25C 1000 [nsec] t off t on 1000 tr tf [V] 800 CE Dynamic input characteristics T j =25C 25 V CC =400V 600V 800V 600 20 on, t r, t off, t f Collector-Emitter voltage : V 15 Switching time : t 400 10 200 100 5 1 10 Gate resistance : R G [ ] Forward current vs. Forward voltage V GE =OV 0 0 500 0 1000 1500 2000 2500 3000 3500 4000 Gate charge : Q G [nC] Reverse recovery characteristics t rr, Irr vs. I F T j =125C 25C 600 [A] [A] rr rr [nsec] t rr 125C Irr 125C Irr 25C trr 25C 100 F Reverse recovery current : I 0 1 2 3 4 5 Forward current : I 200 0 0 200 400 600 Forward voltage : V F [V] Reverse recovery time 400 :t Forward current : I F [A] Reversed biased safe operating area Transient thermal resistance 3000 Diode [C/W] 0,1 [A] IGBT 2000 SCSOA (non-repetitive pulse) 1500 C +V GE =15V, -V GE <15V, T j <125C, R G >2.7 2500 th(j-c) Thermal resistance : R 0,01 Collector current : I 1000 500 RBSOA (Repetitive pulse) 0,001 0,001 0 0,01 0,1 1 0 200 400 600 800 1000 1200 Pulse width : PW [sec] Collector-Emitter voltage : V CE [V] Switching loss vs. Collector current V CC =600V, R G =2.7 , V GE =15V 125 E off 125C Capacitance vs. Collector-Emitter voltage T j=25C E off, E rr [mJ/cycle] 100 C oes , C res [nF] 100 C ies 75 E off 25C 50 E on 125C E on 25C 25 E rr 125C E rr 25C 0 0 100 200 300 400 500 600 on, Switching loss : E Capacitance : C ies , 10 C oes C res 1 0 5 10 15 20 25 30 35 Collector Current : I C [A] Collector-Emitter Voltage : V CE [V] Fuji Electric GmbH Lyoner Strae 26 D-60528 Frankfurt/M Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Fuji Electric (UK) Ltd. Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com |
Price & Availability of 1MBI300NA-120
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