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| DSS20201L LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features * * * * * Ideal for Medium Power Amplification and Switching Complementary PNP Type Available (DSS20200L) Ultra Low Collector-Emitter Saturation Voltage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Mechanical Data * * * * * * * Case: SOT-23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish -- Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) C NEW PRODUCT B Top View E Device Schematic Maximum Ratings @TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO ICM IC Value 20 20 6 4 2 Unit V V V A A Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25C Power Dissipation (Note 4) @ TA = 25C Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25C Operating and Storage Temperature Range Notes: 1. 2. 3. 4. Symbol PD RJA PD RJA TJ, TSTG Value 600 209 1.2 104 -55 to +150 Unit mW C/W mW C/W C No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB with minimum recommended pad layout. Device mounted on FR-4 PCB with 1 inch2 copper pad layout. DSS20201L Document number: DS31605 Rev. 2 - 2 1 of 5 www.diodes.com December 2008 (c) Diodes Incorporated DSS20201L Electrical Characteristics @TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min 20 20 6 200 200 200 200 150 Typ 330 40 75 70 35 Max 100 100 10 50 90 100 50 0.9 0.9 45 450 200 100 100 610 500 110 Unit V V V nA nA Test Conditions IC = 100A IC = 10mA IE = 100A VCB = 20V, IE = 0 VEB = 6V, IC = 0 VCE = 2V, IC = 10mA VCE = 2V, IC = 500mA VCE = 2V, IC = 1A VCE = 2V, IC = 2A IC = 0.1A, IB = 10mA IC = 1.0A, IB = 100mA IC = 1.0A, IB = 10mA IC = 2.0A, IB = 200mA IE = 2A, IB = 200mA IC = 1A, IB = 10mA VCE = 2V, IC = 1A VCE = 5V, IC = 100mA, f = 100MHz VCB = 3V, f = 1MHz VEB = 0.5V, f = 1MHz VCC = 15V, IC = 750mA, IB1 = 15mA VCC = 15V, IC = 750mA, IB1 = IB2 = 15mA NEW PRODUCT Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 5) DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(SAT) RCE(SAT) VBE(SAT) VBE(ON) fT Cobo Cibo ton td tr toff ts tf mV Equivalent On-Resistance Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage SMALL SIGNAL CHARACTERISTICS Transition Frequency Output Capacitance Input Capacitance SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time Notes: m V V MHz pF pF ns ns ns ns ns ns 5. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 1.6 1.4 10 PD, POWER DISSIPATION (W) 1.2 1.0 0.8 0.6 (Note 3) (Note 4) IC , COLLECTOR CURRENT (A) Pw = 10ms 1 Pw = 100ms 0.1 DC 0.4 0.2 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature 0.01 0.001 0.1 1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage DSS20201L Document number: DS31605 Rev. 2 - 2 2 of 5 www.diodes.com December 2008 (c) Diodes Incorporated DSS20201L 1.8 1.6 IC, COLLECTOR CURRENT (A) hFE, DC CURRENT GAIN 1,000 T A = 150C 1.4 1.2 1.0 IB = 5mA T A = 85C TA = 25C T A = -55C IB = 4mA IB = 3mA 100 0.8 0.6 0.4 IB = 1mA IB = 2mA NEW PRODUCT 0.2 0 0 1 2 3 4 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage 5 10 1 VCE = 2V 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical DC Current Gain vs. Collector Current VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 IC/IB = 10 1.2 VCE = 2V VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1.0 0.1 T A = 150C T A = 85C 0.8 TA = -55C 0.6 TA = 25C 0.01 TA = 25C TA = -55C 0.4 T A = 85C T A = 150C 0.2 0.001 1 0 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Turn-On Voltage vs. Collector Current f = 1MHz 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current IC/IB = 10 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1.2 1,000 1.0 0.8 TA = -55C CAPACITANCE (pF) 100 Cibo 0.6 T A = 25C TA = 85C TA = 150C 0.4 10 Cobo 0.2 0 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Base-Emitter Saturation Voltage vs. Collector Current 1 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 8 Typical Capacitance Characteristics DSS20201L Document number: DS31605 Rev. 2 - 2 3 of 5 www.diodes.com December 2008 (c) Diodes Incorporated DSS20201L 1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz) 100 NEW PRODUCT 10 VCE = 2V f = 100MHz 1 0 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Gain-Bandwidth Product vs. Collector Current 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.9 RJA(t) = r(t) * RJA RJA = 168C/W P(pk) D = 0.02 0.01 D = 0.01 D = 0.005 t1 D = Single Pulse t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 10 Transient Thermal Response 10 100 1,000 Ordering Information Part Number DSS20201L-7 Notes: (Note 6) Case SOT-23 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information ZN1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) ZN1 Date Code Key Year Code Month Code 2008 V Jan 1 Feb 2 2009 W Mar 3 2010 X Apr 4 May 5 YM 2011 Y Jun 6 2012 Z Jul 7 Aug 8 2013 A Sep 9 2014 B Oct O Nov N 2015 C Dec D DSS20201L Document number: DS31605 Rev. 2 - 2 4 of 5 www.diodes.com December 2008 (c) Diodes Incorporated DSS20201L Package Outline Dimensions A BC NEW PRODUCT H K D J F G L M K1 SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm Suggested Pad Layout Y Z C Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DSS20201L Document number: DS31605 Rev. 2 - 2 5 of 5 www.diodes.com December 2008 (c) Diodes Incorporated |
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