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 IXGC 16N60C2 HiPerFASTTM IGBT IXGC 16N60C2D1 C2-Class High Speed IGBT in ISOPLUS220TM Case Electrically Isolated Back Surface
Preliminary Data Sheet
D1
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VCES IC25 VCE(sat)
tfi(typ)
= 600 V = 20 A = 3.0 V = 35 ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ID110 ICM SSOA (RBSOA) PC TJ TJM Tstg FC VISOL
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 110C TC = 110C (IXGC16N60C2D1 diode) TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 22 Clamped inductive load TC = 25C
Maximum Ratings 600 600 20 30 20 8 10 100 ICM = 32 @0.8 VCES 63 -55 ... +150 150 -55 ... +150 V V V V A A A A A
ISOPLUS 220TM (IXGC) E153432
G
C
E
Isolated back surface*
G = Gate E = Emitter
C = Collector
Features W C C C N/lb. V C Applications g DCB Isolated mounting tab UL recognized (E153432) Meets TO-273 package Outline High current handling capability MOS Gate turn-on - drive simplicity Epoxy meets UL94V-0 flammability classification
Mounting Force
11..65/2.5..15 2500 300 2
Isolation Voltage; 50/60Hz; t = 1minute; RMS Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Weight
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.5 16N60C2 16N60C2D1 5.0 25 50 100 TJ=125C 2.7 2.1 3.0 V A A nA V V
Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages Easy assembly High power density Very fast switching speeds for high frequency applications
VGE(th) ICES IGES VCE(sat)
IC = 250 A, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = 12 A, VGE = 15 V Note 2
(c) 2004 IXYS All rights reserved
DS99149A(11/04)
IXGC 16N60C2 IXGC 16N60C2D1
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Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 8 12 720 55 65 19 32 6 10 25 15 60 35 60 25 18 16N60C2D1 0.38 115 70 150 0.25 120 100 100 S pF pF pF pF nC nC nC ns ns ns ns J ns ns mJ ns ns J 2.0 K/W K/W
ISOPLUS220 Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = 12A; VCE = 10 V, Note 2. VCE = 25 V, VGE = 0 V, f = 1 MHz 16N60C2 16N60C2D1 IC = 20A, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25C IC = 12 A; VGE = 15 V VCE = 400 V; RG = Roff = 22 Note 1.
Inductive load, TJ = 125C IC = 12A; VGE = 15 V VCE = 400 V; RG = Roff = 22 Note 1
Reverse Diode (FRED) Symbol VF IRM t rr t rr RthJC Notes: Test Conditions IF = 10 A, VGE = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ = 125C 2.5 110 30 2.66 1.66 V V A ns ns 2.5 K/W
IF = 12 A; -diF/dt = 100 A/s, VR = 100 V VGE = 0 V; TJ = 125C IF = 1 A; -diF/dt = 100 A/s; VR = 30 V, VGE = 0 V
1. Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ, or increased RG. 2. Pulse test, t 300 s, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692


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