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Preliminary Technical Information
GenX3TM 600V IGBT With Diode
High Speed PT IGBTs for 40-100kHz switching
IXGA30N60C3D4 IXGP30N60C3D4
VCES = IC110 = VCE(sat) tfi(typ) =
600V 30A 3.0V 47ns
TO-263 (IXGA)
Symbol
VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions
TC = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C TC = 110C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 5 Clamped inductive load @ 600V TC = 25C
Maximum Ratings
600 600 20 30 60 30 150 ICM = 60 220 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C C C Nm/lb.in. g g Optimized for low switching losses Square RBSOA Anti-parallel ultra fast diode International standard packages Advantages High power density Low gate drive requirement Features
G C C(TAB) E G E C(TAB)
TO-220 (IXGP)
G = Gate E = Emitter
C = Collector TAB = Collector
1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO-263
300 260 1.13/10 2.5 3.0
Symbol Test Conditions
(TJ = 25C unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250A, VGE = 0V IC = 250A, VCE = VGE VCE = VCES VGE = 0V VCE = 0V, VGE = 20V IC = 20A, VGE = 15V, Note 1 TJ = 125C TJ = 125C
Characteristic Values
Min. 600 3.5 5.5 Typ. Max. V V 75 A 500 A 100 nA 2.6 1.8 3.0 V V
Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts
(c) 2008 IXYS CORPORATION, All rights reserved
DS100073(11/08)
IXGA30N60C3D4 IXGP30N60C3D4
Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs
Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS TO-220 0.50 Inductive Load, TJ = 125C IC = 20A, VGE = 15V VCE = 300V, RG = 5 Inductive Load, TJ = 25C IC = 20A, VGE = 15V VCE = 300V, RG = 5 IC = 20A, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1MHz IC = 20A, VCE = 10V, Note 1
Characteristic Values Min. Typ. Max.
9 16 915 78 32 38 8 17 16 26 0.27 42 47 0.09 17 28 0.44 70 90 0.33 0.18 75 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.56 C/W C/W
TO-263 (IXGA) Outline
TO-220 (IXGP) Outline
Reverse Diode (FRED) Symbol Test Conditions (TJ = 25C, unless otherwise specified) VF trr IRM RthJC Note 1: Pulse test, t 300s; duty cycle, d 2%. IF = 10A, VGE = 0V, Note 1 TJ = 150C TJ = 100C TJ = 25C TJ = 100C Characteristic Values Min. Typ. Max. 3.0 1.7 60 3 4 V V ns A A
IF = 10A, -diF/dt = 200A/s VR = 300V
Pins:
2.5 C/W
1 - Gate 3 - Source
2 - Drain 4 - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2
IXGA30N60C3D4 IXGP30N60C3D4
Fig. 1. Output Characteristics @ 25C
40 35 30 VGE = 15V 13V
Fig. 2. Extended Output Characteristics @ 25C
180 160 140
11V
VGE = 15V
IC - Amperes
IC - Amperes
25 20 15 10 5 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 7V 9V
120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16
13V
11V
9V
7V 18 20
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ 125C
40 35 30 VGE = 15V 13V 11V
Fig. 4. Dependence of VCE(sat) on Junction Temperature
1.1
VGE = 15V
1.0
I
C
= 40A
VCE(sat) - Normalized
IC - Amperes
25 20 15 10 5 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4
9V
0.9
0.8
I
0.7
C
= 20A
0.6
7V
I
C
= 10A
0.5
2.8 3.2
25
50
75
100
125
150
VCE - Volts
www..net
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
5.5
Fig. 6. Input Admittance
70
TJ = 25C
5.0
60 50
VCE - Volts
I 4.0
C
= 40A 20A 10A
IC - Amperes
4.5
40 30 20 10 0
TJ = 125C 25C - 40C
3.5
3.0
2.5 7 8 9 10 11 12 13 14 15
5
6
7
8
9
10
11
VGE - Volts
VGE - Volts
(c) 2008 IXYS CORPORATION, All rights reserved
IXGA30N60C3D4 IXGP30N60C3D4
Fig. 7. Transconductance
24 22 20 18 25C 125C TJ = - 40C
Fig. 8. Gate Charge
16 14 12
VCE = 300V I C = 20A I G = 10 mA
g f s - Siemens
16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80
VGE - Volts
10 8 6 4 2 0 0 5 10 15 20 25 30 35 40
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
10,000
60 50
Fig. 10. Reverse-Bias Safe Operating Area
f = 1 MHz
Capacitance - PicoFarads
Cies
1,000
IC - Amperes
40 30 20
100
Coes
TJ = 125C
10
Cres
10 0 5 10 15 20 25 30 35 40
0 100
RG = 5 dV / dt < 10V / ns
200
300
400
500
600
VCE - Volts
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VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z(th)JC - C / W
0.10
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_30N60C3(4D)7-25-08
IXGA30N60C3D4 IXGP30N60C3D4
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
0.8 1.4
Fig. 13. Inductive Switching Energy Loss vs. Collector Current
0.6 1.2
Eoff
0.7
Eon -
--1.2
Eoff
0.5
Eon
---1.0
TJ = 125C , VGE = 15V VCE = 300V
RG = 5 , VGE = 15V VCE = 300V
Eoff - MilliJoules
Eoff - MilliJoules
0.6
I
C
= 40A
1.0
0.4
0.8
E
E - MilliJoules
on
on
- MilliJoules
0.5
0.8
0.3
TJ = 125C
0.6
0.4
0.6
0.2
0.4
0.3
I C = 20A
0.4
0.1
TJ = 25C
0.2
0.2 4 6 8 10 12 14 16 18 20
0.2
0.0 10 15 20 25 30 35 40
0.0
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 25 35 45 55 65 75 85 95 105 115 1.4
180 170
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
140
Eoff VCE = 300V
Eon
---1.2
tf
VCE = 300V
td(off) - - - -
130 120
RG = 5 , VGE = 15V
160
TJ = 125C, VGE = 15V
t d(off) - Nanoseconds
I C = 40A
0.8 0.6 0.4
t f - Nanoseconds
Eoff - MilliJoules
1.0
150 140 130 120 110 100
110 100
E - MilliJoules
on
I
C
= 40A
90 80 70
I
C
= 20A
I C = 20A
60 50 40
0.2 0.0 125
90 80 4 6 8 10 12 14 16 18 20
TJ - Degrees Centigrade
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RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
180 160 140 110
160 140 120 100
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
90
tf
VCE = 300V
td(off) - - - -
RG = 5 , VGE = 15V
100 90
tf
VCE = 300V
td(off) - - - -
RG = 5 , VGE = 15V
80
t d(off) - Nanoseconds
t f - Nanoseconds
120 100 80 60 40 20 0 10 15 20
TJ = 125C
80 70 60 50
t f - Nanoseconds
70 60
t d(off) - Nanoseconds
I C = 40A, 20A
80 60 40 20 25 35 45 55 65 75 85 95 105 115 50 40 30 20 125
TJ = 25C
40 30 20
25
30
35
40
IC - Amperes
TJ - Degrees Centigrade
(c) 2008 IXYS CORPORATION, All rights reserved
IXGA30N60C3D4 IXGP30N60C3D4
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
90 80 70 30
70 60
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
24
tr
VCE = 300V
td(on) - - - -
TJ = 125C, VGE = 15V
28 26
tr
VCE = 300V
td(on) - - - -
RG = 5 , VGE = 15V
22
t d(on) - Nanoseconds
t d(on) - Nanoseconds
t r - Nanoseconds
t r - Nanoseconds
50 40 30 20 10 0 10
20
60 50 40 30 20 10 4 6 8 10
I
C
= 40A
24 22 20 18 16 14
TJ = 125C
18
TJ = 25C
16 14 12 10
I
C
= 20A
12
14
16
18
20
15
20
25
30
35
40
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature
75 70 65 60 21
I C = 40A
20
t d(on) - Nanoseconds
t r - Nanoseconds
55 50 45 40 35 30 25 20 15 25 35 45 55 65 75
tr
VCE = 300V
td(on) - - - -
19
RG = 5 , VGE = 15V
18
I
C
= 20A
17
16
85
95
105
115
15 125
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_30N60C3(4D) 7-25-08
IXGA30N60C3D4 IXGP30N60C3D4
30
A
250
nC
T VJ = 150C
T VJ = 100C V R = 300 V
10
A
IF = 5 A IF = 10 A IF = 20 A
25
IF
200
Qr
IRM
IF = 5 A I F = 10 A I F = 20 A
8
20 15 10 5 0
T VJ = 25C T VJ = 100C
150
6
100
4
T VJ = 100C V R = 300 V
50
2
0
1
2
VF
3
V
0 100
A/s 1000 -diF/dt
0
0
200
400
600 A/s 1000 800 -diF/dt
Fig. 21. Forward current IF versus VF
Fig. 22. Reverse recovery charge Qr
Fig. 23. Peak reverse current IRM
2.0
ns
T VJ = 100C V R = 300 V
60
V V FR
T VJ = 100C I F = 10 A
0.3
s
100
1.5
Kf
trr
t fr
80
I RM
IF = 5 A I F = 10 A I F = 20 A
40
0.2
1.0
60
20
V FR
0.5
Qr
t fr
0.1
40
80 120 C 160
T VJ
0.0
0
40
0
200
400
600
-diF/dt
800 A/s 1000
0
0
200
400
0.0 600 A/s 1000 800 diF/dt
Fig. 24. Dynamic parameters Qr, IRM
10
K/W
Fig. 25. Recovery time trr versus -diF/dt
Fig. 26. Peak forward voltage VFR and Constants for ZthJC calculation: i 1 2 Rthi (K/W) 1.449 0.5578 ti (s) 0.0052 0.0003
1
Z thJC
0.1
0.01
0.001 0.00001
DSEP 8-06B
0.0001
0.001
0.01
0.1
s t
1
Fig. 27. Transient thermal resistance junction-to-case
NOTE: Fig. 2 to Fig. 6 shows typical values
(c) 2008 IXYS CORPORATION, All rights reserved

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