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| SKiiP 32 NAB 12 Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = -IC IFM = -ICM Conditions 1) Values 1200 20 65 / 45 130 / 90 60 / 40 120 / 80 1500 35 700 2400 - 40 . . . + 150 - 40 . . . + 125 2500 Units V V A A A A V A A A2s C C V Theatsink = 25 / 80 C tp < 1 ms; Theatsink = 25 / 80 C Theatsink = 25 / 80 C tp < 1 ms; Theatsink = 25 / 80 C MiniSKIIP 3 SEMIKRON integrated intelligent Power SKiiP 32 NAB 12 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter Case M3 Bridge Rectifier VRRM Theatsink = 80 C ID tp = 10 ms; sin. 180 , Tj = 25 C IFSM tp = 10 ms; sin. 180 , Tj = 25 C I2t Tj Tstg Visol AC, 1 min. Characteristics Symbol Conditions 1) IGBT - Inverter IC = 50 A Tj = 25 (125) C VCEsat VCC = 600 V; VGE = 15 V td(on) IC = 50 A; Tj = 125 C tr Rgon = Rgoff = 22 td(off) tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh IGBT - Chopper VCEsat IC = 25 A Tj = 25 (125) C VCC = 600 V; VGE = 15 V td(on) IC = 25 A; Tj = 125 C tr www..com R td(off) gon = Rgoff = 47 tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh Diode 2) - Inverter & Chopper VF = VEC IF = 50 A Tj = 25 (125) C Tj = 125 C VTO Tj = 125 C rT IF = 50 A, VR = - 600 V IRRM diF/dt = - 800 A/s Qrr VGE = 0 V, Tj = 125 C Eoff per diode Rthjh Diode - Rectifier VF IF = 35 A, Tj = 25 C per diode Rthjh Temperature Sensor T = 25 / 100 C RTS min. - - - - - - - - - - - - - - - - - - - - - - - - - typ. max. Units V 2,5(3,1) 3,0(3,7) ns 100 44 ns 100 56 ns 500 380 ns 100 70 mJ - 13 nF - 3,3 K/W 0,5 - V 2,5(3,1) 3,0(3,7) ns 150 75 ns 130 65 ns 600 400 ns 100 50 mJ - 6,2 nF - 1,65 K/W 1,0 - V 2,0(1,8) 2,5(2,3) V 1,2 1,0 m 22 16 A - 40 C - 8,0 mJ - 2,0 K/W 1,0 - 1,2 - 1000 / 1670 - 1,6 V K/W Nm www..com UL recognized file no. E63532 * * specification of temperature sensor see part A common characteristics B 16 - 4 Options * also available with powerful chopper. For characteristics please refer to Inverter IGBT 1) 2) Theatsink = 25 C, unless otherwise specified CAL = Controlled Axial Lifetime Technology (soft and fast recovery) Mechanical Data 2 - 2,5 case to heatsink, SI Units M1 M3 Case mechanical outline see page B 16 - 9 * For diagrams of the Chopper IGBT please refer to SKiiP 30 NAB 12 (c) by SEMIKRON www..com 0698 B 16 - 59 www..com IC [A] 100 17V 80 15V 13V 60 11V 9V 40 7V 32NA1201.vpo 20 0 0 1 2 3 4 5 VCE [V] Fig. 1 Typ. output characteristic, tp = 80 s; 25 C Fig. 2 Typ. output characteristic, tp = 80 s; 125 C Tj = 125 C VCE = 600 V VGE = 15 V RG = 22 Tj = 125 C VCE = 600 V VGE = 15 V IC = 50 A www..com Fig. 3 Turn-on /-off energy = f (IC) VGE [V] 20 18 16 14 600V 32NA1205 Fig. 4 Turn-on /-off energy = f (RG) ICpuls = 50 A 800V C [nF] 100 32NA1206 VGE = 0 V f = 1 MHz 10 12 10 8 6 4 2 0 0 100 200 300 400 QG [nC] 0,1 0 10 20 30 40 VCE [V] 1 Coss Crss Ciss Fig. 5 Typ. gate charge characteristic B 16 - 60 Fig. 6 Typ. capacitances vs. V CE 0698 (c) by SEMIKRON MiniSKiiP 1200 V ICop / IC 1.2 Mini1207 Tj = 150 C VGE = 15 V 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 Th [C] Fig. 7 Rated current of the IGBT ICop / IC = f (Th) ICpuls/IC 2,5 Mini1209 Tj = 150 C VGE = 15 V ICsc/ICN 12 Mini1210 2 10 Tj = 150 C VGE = 15 V tsc = 10 s Lext < 25 nH 8 1,5 6 1 4 Note: *Allowed numbers of short ci cuit:<1000 r *Time between short circuit:>1s 0,5 2 www..com 0 0 500 1000 1500 VCE [V] 0 0 500 1000 1500 VCE [V] Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT Fig. 10 Safe operating area at short circuit of the IGBT Fig. 11 Typ. freewheeling diode forward characteristic B 16 - 4 Fig. 12 Forward characteristic of the input bridge diode 0698 (c) by SEMIKRON www..com MiniSKiiP 3 SKiiP 30 NAB 06 SKiiP 31 NAB 06 SKiiP 32 NAB 06 SKiiP 30 NAB 12 SKiiP 31 NAB 12 SKiiP 32 NAB 12 Circuit Case M3 Layout and connections for the customer's printed circuit board |
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