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| www..com SUB45N03-13L Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.013 @ VGS = 10 V 0.02 @ VGS = 4.5 V ID (A) 45a 45a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D TO-263 G G DS Top View S SUB45N03-13L www..com N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25_C TA = 25_Cd TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 30 "20 45a 34a 100 45 100 88c 3.75 - 55 to 175 Unit V A mJ W _C Maximum Power Dissipationb Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 71740 S-05010--Rev. G, 05-Nov-01 www.vishay.com PCB Mountd Symbol RthJA RthJC Limit 40 1.7 Unit _C/W 1 www. .com www..com SUB45N03-13L Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current g IDSS VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 30 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 45 A Drain-Source On-State Drain Source On State Resistancea VGS = 10 V, ID = 45 A, TJ = 125_C rDS( ) DS(on) VGS = 10 V, ID = 45 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 45 A 20 45 0.009 0.013 0.02 0.0145 0.013 0.02 0.026 0.02 S W 30 1 3 "100 1 50 150 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss 2000 VGS = 0 V, VDS = 25 V, f = 1 MHz 370 180 40 7.5 8 11 VDD = 15 V, RL = 0.33 W ID ] 45 A, VGEN = 10 V, RG = 2.5 W 9 38 11 20 20 70 20 ns 70 nC pF www..com Crss Qg Qgs Qgd td(on) tr td(off) tf VDS = 15 V, VGS = 10 V, ID = 45 A , , Coss Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = 45 A, di/dt = 100 A/ms , m IF = 45 A, VGS = 0 V 1 35 1.7 0.03 45 A 100 1.3 70 V ns A mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. e. Guaranteed by design, not subject to production testing. b. Independent of operating temperature. www.vishay.com 2 Document Number: 71740 S-05010--Rev. G, 05-Nov-01 www. .com www..com SUB45N03-13L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 120 VGS = 10 thru 6 V 5V 90 I D - Drain Current (A) I D - Drain Current (A) 60 100 Transfer Characteristics 80 60 4V 40 TC = 125_C 20 25_C 0 - 55_C 3 4 5 30 2V 0 0 2 4 6 8 10 3V 0 1 2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 80 TC = - 55_C 60 25_C r DS(on) - On-Resistance ( W ) 0.04 0.05 On-Resistance vs. Drain Current g fs - Transconductance (S) www..com 125_C 0.03 0.02 VGS = 4.5 V VGS = 10 V 0.01 40 20 0 0 20 40 60 80 0.00 0 20 40 ID - Drain Current (A) 60 80 VGS - Gate-to-Source Voltage (V) Capacitance 3000 10 Gate Charge Ciss V GS - Gate-to-Source Voltage (V) 2500 C - Capacitance (pF) 8 VDS = 15 V ID = 45 A 2000 6 1500 4 1000 Coss 500 Crss 0 6 12 18 24 30 2 0 0 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Document Number: 71740 S-05010--Rev. G, 05-Nov-01 Qg - Total Gate Charge (nC) www.vishay.com 3 www. .com www..com SUB45N03-13L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 100 VGS = 10 V ID = 45 A r DS(on) - On-Resistance (W) (Normalized) 1.7 I S - Source Current (A) TJ = 150_C TJ = 25_C 10 Source-Drain Diode Forward Voltage 1.3 0.9 0.5 - 50 1 - 25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Drain Current vs. Case Temperature 60 200 100 10 ms 100 ms Safe Operating Area 50 I D - Drain Current (A) I D - Drain Current (A) 40 www..com 10 TC = 25_C Single Pulse Limited by rDS(on) 30 1 ms 20 10 ms 100 ms dc 10 0 0 25 50 75 100 125 150 175 1 0.1 1 10 100 TC - Case Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 3 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 71740 S-05010--Rev. G, 05-Nov-01 4 www. .com |
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