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| HIGH-POWERGaAlAsIREMITTERS OD-880L FEATURES * High reliability liquid-phase epitaxially grown GaAlAs * 880nm peak emission for optimum matching with ODD-45W photodiode * Wide range of linear power output * Hermetically sealed TO-46 package * Medium emission angle for best coverage/power density 1.00 MIN. GLASS DOME .015 ANODE (CASE) .209 .220 .183 .152 .186 .156 .017 .024 .043 .143 .150 .100 .041 www..com CATHODE .036 45 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25C Total Power Output, Po PARAMETERS TEST CONDITIONS IF = 100mA IF = 50mA IF = 100mA IR = 10 A VR = 0V MIN 18 TYP 20 50 80 35 30 17 MAX UNITS mW/sr nm nm mW Peak Emission Wavelength, P Spectral Bandwidth at 50%, Half Intensity Beam Angle, Forward Voltage, VF Radiant Intensity, Ie 880 Capacitance, C Rise Time Fall Time Reverse Breakdown Voltage, VR 5 1.55 1.9 Volts Volts pF sec sec Deg 0.5 0.5 ABSOLUTE MAXIMUM RATINGS AT 25C CASE Continuous Forward Current Reverse Voltage Power Dissipation1 190mW 100mA 5V 3A Peak Forward Current (10 s, 400Hz)2 Lead Soldering Temperature (1/16" from case for 10sec) 1Derate per Thermal Derating Curve above 25C 2Derate linearly above 25C 260C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 -55C TO 100C 400C/W Typical 135C/W Typical 100C Thermal Resistance, RTHJA2 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com HIGH-POWERGaAlAsIREMITTERS 200 180 POWER DISSIPATION (mW) 160 140 120 100 80 60 40 20 0 25 50 75 AMBIENT TEMPERATURE (C) 100 NO HEAT SINK INFINITE HEAT SINK OD-880L 10 PEAK FORWARD CURRENT, Ip (amps) THERMAL DERATING CURVE MAXIMUM PEAK PULSE CURRENT t = 10 s t = 100 s t = 500 s 1 MAXIMUM RATINGS 0.1 t Ip T 0.1 D= t T 0.01 0.01 1 DUTY CYCLE, D (%) 10 100 www..com TYPICAL CHARACTERISTICS 100 DEGRADATION CURVE IF = 20mA RELATIVE POWER OUTPUT (%) 100 RADIATION PATTERN RELATIVE POWER OUTPUT (%) 90 IF = 50mA 80 80 60 70 TCASE = 25C NO PRE BURN-IN PERFORMED 40 60 IF = 100mA 104 105 20 50 101 102 103 STRESS TIME, (hrs) 0 -50 -40 -30 -20 -10 0 10 20 BEAM ANGLE, (deg) 30 40 50 4 FORWARD I-V CHARACTERISTICS 1.5 1.4 POWER OUTPUT vs TEMPERATURE FORWARD CURRENT, IF (amps) RELATIVE POWER OUTPUT 0 1 2 3 4 FORWARD VOLTAGE, VF (volts) 5 6 3 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 2 1 0 -25 0 25 50 AMBIENT TEMPERATURE (C) 75 100 100 SPECTRAL OUTPUT 1,000 POWER OUTPUT vs FORWARD CURRENT RELATIVE POWER OUTPUT (%) 60 40 POWER OUTPUT, P (mW) o 80 100 10 20 DC PULSE 10 s, 100Hz 0 750 800 850 900 WAVELENGTH, (nm) 950 1,000 1 10 100 1,000 FORWARD CURRENT, IF (mA) 10,000 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com |
Price & Availability of OD-880L
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