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| SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURE Complementary to KTC3211. B KTA1283 EPITAXIAL PLANAR PNP TRANSISTOR C A N MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING -40 -25 -6 -1.5 625 150 -55 150 UNIT V V V A mW L K D E G H F F 1 2 3 M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO hFE(1) DC Current Gain hFE(2) (Note) hFE(3) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(2) Classification O:85 160 , Y:120 VCE(sat) VBE(sat) VBE fT Cob TEST CONDITION VCB=-35V, IE=0 VEB=-6V, IC=0 IC=-100 A, IE=0 IC=-2mA, IB=0 VCE=-1V, IC=-5mA VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA IC=-800mA, IB=-80mA IC=-800mA, IB=-80mA VCE=-1V, IC=-10mA VCE=-10V, IC=-50mA VCB=-10V, f=1MHz, IE=0 MIN. -40 -25 45 85 40 100 TYP. 170 160 80 -0.28 -0.98 -0.66 200 15 MAX. -100 -100 300 -0.5 -1.2 -1.0 V V V MHz pF UNIT nA nA V V 200 , GR:160 300 1999. 11. 30 Revision No : 2 1/2 KTA1283 I C - VCE -0.5 COLLECTOR CURRENT I C (mA) I B =-4.0mA h FE - I C 1k DC CURRENT GAIN h FE I B =-3.5mA I B =-3.0mA I B =-2.5mA I B =-2.0mA I B =-1.5mA I B =-1.0mA VCE =-1V -0.4 -0.3 -0.2 -0.1 0 500 300 100 50 30 I B =-0.5mA 0 -0.4 -0.8 -1.2 -1.6 -2.0 10 -0.1 -0.3 -1 -3 -10 -30 -100 -300 -1K COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) I C - V BE COLLECTOR CURRENT I C (mA) -100 -50 -30 -10 -5 -3 -1 -0.5 -0.3 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE VBE (V) VCE =-1V V BE(sat), VCE(sat) - I C -5k -3k SATURATION VOLTAGE V BE(sat), VCE(sat) (mV) -1k -500 -300 -100 -50 -30 -10 -0.1 VCE (sat) VBE (sat) IC =10I B -0.3 -1 -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT IC (mA) f T - IC COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) 300 100 50 30 V CE =-10V C ob - VCB f=1MHz I E =0 100 50 30 10 5 3 10 -1 -3 -5 -10 -30 -50 -100 -300 COLLECTOR CURRENT I C (mA) 1 -1 -3 -5 -10 -30 -50 COLLECTOR-BASE VOLTAGE VCB (V) 1999. 11. 30 Revision No : 2 2/2 |
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