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4AE11
Silicon NPN/PNP Triple Diffused
Application
Low frequency power amplifier
Outline
SP-12 2 1 5 4
NPN
1
3 9
PNP
6 11
8
12
12
1, 5, 8, 12 2, 4, 9, 11 3, 6, 7, 10 Base Collector Emitter NPN 7 PNP 10
4AE11
Absolute Maximum Ratings (for each device, Ta = 25C)
Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25C. Symbol VCBO VCEO VEBO IC IC(peak) PC* Tj Tstg
1
NPN 300 300 7 0.3 0.6 32 150 -55 to 150
PNP -300 -300 -7 -0.3 -0.6 32 150 -55 to 150
Unit V V V A A W C C
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 300 300 7 -- -- -- 1000 3000 -- -- Typ -- -- -- -- -- -- -- -- -- -- Max -- -- -- 10 10 10 -- 30000 1.5 2.0 V V A Unit V V V A Test conditions IC = 1 mA, IE = 0 IC = 10 mA, RBE = IE = 1 mA, IC = 0 VCB = 300 V, IE = 0 VCE = 60 V, RBE = VEB = 5 V, IC = 0 VCE = 1.5 V, IC = 20 mA*
1
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO ICBO ICEO Emitter cutoff current DC current transfer ratio IEBO hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage VCE(sat) VBE(sat)
VCE = 1.5 V, IC = 100 mA*
1
IC = 100 mA, IB = 0.2 mA* IC = 100 mA, IB = 0.2 mA*
1
1
Notes: 1. Pulse test. 2. The minus sign of PNP is omitted.
2
4AE11
Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) 4 device operation 3 device operation 40 2 device operation 1 device operation 20
0
50 100 Case Temperature TC (C)
150
Note: Collector power dissipation of each devices is identical. Typical Output Characteristics (NPN) 500 TC = 25C
100 90 80 70 60 50
Collector current IC (mA)
400
300
40
200 30 20 IB = 0 0 10 A
100
1 2 3 4 5 Collector to emitter voltage VCE (V)
DC Current Transfer Ratio vs. Collector Current (NPN) 10,000 DC current transfer ratio hFE 5,000 2,000 1,000 500 200 100 50 20 10 1 2 5 10 20 50 100 200 500 1,000 Collector current IC (mA) VCE= 1.5 V Pulse
C 75 = T C 5C 2 C 5 -2
3
4AE11
Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) Saturation Voltage vs. Collector Current (NPN) 10 5 200 2 VBE (sat) 1.0 0.5 0.2 0.1 2 5 10 20 50 100 200 Collector current IC (mA) 500 VCE (sat) IC/IB = 200 500 TC = 25C
Typical Output Characteristics (PNP) -500 TC = 25C -180 -160 -140
-
00 -2
Collector current IC (mA)
-400
80 0
20 -1 100 -
-6
-300
-4
-20
0
A
-200
-100 IB = 0 0 -1 -2 -3 -4 -5 Collector to emitter voltage VCE (V) DC Current Transfer Ratio vs. Collector Current (PNP)
DC current transfer ratio hFE
10,000 5,000 2,000 1,000 500 200 100 50 -1
VCE= -1.5 V Pulse
TC
=
C 75 C 25
-2
5
C
-3 -10 -30 -100 -300 -1,000 Collector current IC (mA)
Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V)
Saturation Voltage vs. Collector Current (PNP) -10 -5 200 -2 -1.0 -0.5 -0.2 -0.1 -2 VCE (sat) VBE (sat) 500
IC/IB = 200 TC = 25C
-5 -10 -20 -50 -100-200 -500 Collector current IC (mA)
4
4AE11
Unit: mm
31.3 +0.2 -0.3 24.4 0.1 16.4 0.3 5.0 0.2 3.8 3.2 3.0 2.0 0.1
3.2 10.0 0.3 2.7 1 0.85 0.1 12 1.15 2.54 1.4 1.0 16.0 0.3 10.5 0.5
2.2 0.2 0.55
+0.1 -0.06
1
2
3
4
5
6
7
8
9
10 11 12
Pin No. Electrode
1 B
2 C
3 E
4 C
5 B
6 E
7 E
8 B
9 C
10 E
11 C
12 B
Note: B: Base C: Collector E: Emitter
5
4AE11
When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207
Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00
Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322
Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071
6

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