View MRF329_91759.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF329/D
The RF Line
NPN Silicon RF Power Transistor
. . . designed primarily for wideband large-signal output and driver amplifier stages in the 100 to 500 MHz frequency range. * Specified 28 Volt, 400 MHz Characteristics -- Output Power = 100 Watts Minimum Gain = 7.0 dB Efficiency = 50% (Min) * Built-In Matching Network for Broadband Operation Using Double Match Technique
www..com Tested for Load Mismatch at all Phase Angles with 3:1 VSWR * 100%
MRF329
100 W, 100 to 500 MHz CONTROLLED "Q" BROADBAND RF POWER TRANSISTOR NPN SILICON
* Gold Metallization System for High Reliability
CASE 333-04, STYLE 1
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Collector Current -- Peak Total Device Dissipation @ TC = 25C (1) Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 30 60 4.0 9.0 12 270 1.54 - 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case (2) Symbol RJC Max 0.65 Unit C/W
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 80 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 80 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 8.0 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)EBO 30 60 4.0 -- -- -- -- -- -- Vdc Vdc Vdc
NOTES: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 6
(c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994
MRF329 1
ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS (continued)
Collector-Base Breakdown Voltage (IC = 80 mAdc, IE = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CBO ICBO 60 -- -- -- -- 5.0 Vdc mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 4.0 Adc, VCE = 5.0 Vdc) hFE 20 -- 80 --
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob -- 95 125 pF
FUNCTIONAL TESTS (Figure 1) www..com
Common-Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 100 W, f = 400 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 100 W, f = 400 MHz) Load Mismatch (VCC = 28 Vdc, Pout = 100 W, f = 400 MHz, VSWR = 3:1 all angles) GPE No Degradation in Output Power 7.0 50 9.7 60 -- -- dB %
L3 + C12 C13 C14 28 Vdc -
L1
L2 DUT
C10 Z2
RF INPUT
Z1
RF OUTPUT
C1
C2
C3
C4
C5
C6
C7
C8
C9
C11
C1, C2, C7, C9 -- 1.0 - 20 pF Johanson (JMC 5501) C3, C4 -- 36 pF 100 mil Chip Cap (ATC) C5, C6 -- 50 pF 100 mil Chip Cap (ATC) C8 -- 30 pF 100 mil Chip Cap (ATC) C10 -- 2.0 - 150 pF 100 mil Chip Caps in Parallel (ATC) C11 -- 1.0 - 10 pF Johanson (JMC 5201) C12, C13 -- 1000 pF UNELCO Feedthru C14 -- 0.1 F Erie Redcap
L1 -- 0.15 H Molded Choke with Ferrite Bead L1 -- (Ferroxcube #56-590-65/4B) on Ground End L2 -- 4 Turns #18 AWG, 1/4 ID L3 -- Ferroxcube VK200-19/4B Z1 -- Microstrip Line 2300 mils L x 210 mils W Z2 -- Microstrip Line 2300 mils L x 280 mils W Board -- Glass Teflon, t = 0.062, r = 2.56
Figure 1. 400 MHz Test Circuit
MRF329 2
MOTOROLA RF DEVICE DATA
120 Pout , POWER OUTPUT (WATTS) 100 80 60 40 20 0 VCC = 28 Vdc Pout , POWER OUTPUT (WATTS) f = 100 MHz 225 MHz 400 MHz
120 100 80 60 40 20 0 100 VCC = 28 Vdc 6W 4W Pin = 11 W 9W
0
2
4
6
8
10
12
150
200
250
300
350
400
Pin, INPUT POWER (WATTS) www..com
f, FREQUENCY (MHz)
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Frequency
100 Pout , POWER OUTPUT (WATTS) 80
Pin = 11 W Pout , POWER OUTPUT (WATTS)
100 80
Pin = 11 W 8.5 W
8.5 W 60 6.5 W 40
60
6.5 W
40
20 f = 225 MHz 0 10 14 18 22 26 30
20 f = 400 MHz 0 10 14 18 22 26 30
VCC, SUPPLY VOLTAGE (VOLTS)
VCC, SUPPLY VOLTAGE (VOLTS)
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
12.5 Pout = 100 W VCC = 28 V G PE , POWER GAIN (dB) 11.5
10.5
9.5
8.5
0
100
200 f, FREQUENCY (MHz)
300
400
Figure 6. Power Gain versus Frequency
MOTOROLA RF DEVICE DATA
MRF329 3
f = 100 MHz
225 Zin
350 300 www..com 225 ZOL*
400
300 350
400 Pout = 100 W, VCC = 28 V
f = 100 MHz Zo = 10
f MHz 100 225 300 350 400
Zin Ohms 0.55 + j0.40 0.60 + j1.40 1.00 + j2.15 1.50 + j2.20 1.85 + j1.70
ZOL* Ohms 3.56 - j1.60 2.30 - j1.10 1.95 - j0.70 1.70 - j0.20 1.50 + j0.30
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency.
Figure 7. Series Equivalent Input/Output Impedance
MRF329 4
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
-A- N D
2 1 3
Q
2 PL
0.13 (0.005) K -B- K
M
TA
M
B
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K L N P Q STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.965 0.985 0.390 0.410 0.250 0.290 0.190 0.210 0.095 0.115 0.215 0.235 0.725 BSC 0.155 0.175 0.004 0.006 0.195 0.205 0.740 0.770 0.415 0.425 0.390 0.400 0.120 0.135 MILLIMETERS MIN MAX 24.51 25.02 9.91 10.41 6.73 7.36 4.83 5.33 2.42 2.92 5.47 5.96 18.42 BSC 3.94 4.44 0.10 0.15 4.95 5.21 18.80 19.55 10.54 10.80 9.91 10.16 3.05 3.42
P
4
F www..com G
J H
N
N C -T-
SEATING PLANE
EMITTER COLLECTOR EMITTER BASE
CASE 333-04 ISSUE E
MOTOROLA RF DEVICE DATA
MRF329 5
www..com
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
MRF329 6
*MRF329/D*
MRF329/D MOTOROLA RF DEVICE DATA

▲Up To Search▲

Price & Availability of MRF329

	To Download MRF329 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .