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ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF186/D
The RF MOSFET Line
RF Power Field-Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 28 volt base station equipment. * Guaranteed Performance @ 960 MHz, 28 Volts Output Power -- 120 Watts PEP Power Gain -- 11 dB Efficiency -- 30% Intermodulation Distortion -- -28 dBc * Excellent Thermal Stability * 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 28 Vdc, 960 MHz, 120 Watts CW
MRF186
1.0 GHz, 120 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
CASE 375B-04, STYLE 1 NI-860
ARCHIVED 2005
MAXIMUM RATINGS (2)
Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 70C Derate above 70C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 20 14 162.5 1.25 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C
THERMAL CHARACTERISTICS (2)
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.8 Unit C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 5
MOTOROLA RF Motorola, Inc. 2002 DEVICE DATA
MRF186 1
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 50 Adc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 300 Adc Per Side) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 300 mAdc Per Side) Delta Gate Threshold Voltage (Side to Side) (VDS = 28 V, ID = 300 mA Per Side) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 3 Adc Per Side) Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc Per Side) DYNAMIC CHARACTERISTICS (1) Input Capacitance (Per Side) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (Per Side) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Ciss Coss Crss -- -- -- 177 45 3.4 -- -- -- pF pF pF VGS(th) VGS(Q) VGS(Q) VDS(on) gfs 2.5 3.3 -- -- 2.4 3 4.2 -- 0.58 2.8 4 5 0.3 0.7 -- Vdc Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 1 1 Vdc Adc Adc Symbol Min Typ Max Unit
ARCHIVED 2005
Reverse Transfer Capacitance (Per Side) (VDS = 28 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS (In Motorola Test Fixture, 50 ohm system) (2) Two-Tone Common Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz, f2 = 960.1 MHz) Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz, f2 = 960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz, f2 = 960.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz, f2 = 960.1 MHz) Two-Tone Common Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2 x 400 mA, f = 960 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) (1) Each side of device measured separately. (2) Device measured in push-pull configuration. Gps 11 12.2 -- dB
30
35
--
%
IMD
--
-32
-28
dBc
IRL
9
16
--
dB
Gps
--
12
--
dB
--
33
--
%
IMD
--
-32
--
dBc
IRL
--
16
--
dB
No Degradation In Output Power Before and After Test
MRF186 2
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
VGG +
R1
B1
B2
VDD + + C34 C7 C8 C9 BALUN2
C1 COAX1
C2 R2
C3
C4
C5
C6
L1
C28 C26 Z2 Z1 C19 C21 Z3 C22 R4 R3 Z4 Z6 C23 Z7 Z8 C24 Z9 Z10 DUT C29 C30 C31 Z12 Z14 Z16 Z18 Z20 C32 Z22 RF OUTPUT N2 Z17 Z19 Z21 C33 COAX2 L2 B3 B4 VDD + + C10 C11 C12 C13 C14 C15 C35 C16 C17 C18
RF INPUT N1
Z5
Z11 C25
C20
MRF186 Z13 Z15 C27
BALUN1 VGG +
R5
R6
ARCHIVED 2005
B1 - B4 C1, C7, C8, C10, C16, C17 C2, C11, C34, C35 C3, C6, C12, C15 C4, C5, C13, C14, C19, C20, C32, C33 C9, C18 C21, C22 C23, C30 C24, C25, C26 C27, C28
Fair Rite Products Short Ferrit Bead, 2743021446 10 F, 50 V, Tantalum 0.1 F, Chip Capacitor 330 pF, Chip Capacitor 47 pF, Chip Capacitor 250 F, 50 V, Electrolytic Capacitor 12 pF, Chip Capacitor 0.6 - 4.5 pF, Variable Capacitor, Johanson Gigatrim 5.1 pF, Chip Capacitor 3.9 pF, Chip Capacitor
C31
L1, L2 N1, N2 R1, R6 R2, R5 R3, R4 Z1 - Z22 Balun1, Balun2, Coax1, Coax2 2.20 50 , 0.086 OD Semi-Rigid Coax Board 1/32 Glass Teflon, r = 2.55
0.8 - 8.0 pF, Variable Capacitor, Johanson Gigatrim 3 Turns, #20 AWG, IDIA 0.126, 24.7 nH Type N Connectors 1 k, 1/4 W, Carbon Resistor 1.2 k, 0.1 W, Chip Resistor 75 , 0.1 W, Chip Resistor Microstrip (See Component Placement)
Figure 1. 930 - 960 MHz Test Circuit Schematic
MOTOROLA RF DEVICE DATA
MRF186 3
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
TYPICAL CHARACTERISTICS
-20 IMD, INTERMODULATION DISTORTION (dBc) -30 -40 5th Order -50 7th Order -60 -70 VDD = 28 V f1 = 960.0 MHz f2 = 960.1 MHz IDQ = 800 mA IMD, INTERMODULATION DISTORTION (dBc) 3rd Order -25 -30 -35 -40 -45 -50 -55 -60 0.1 VDD = 28 V f1 = 960.0 MHz f2 = 960.1 MHz 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 400 mA 800 mA IDQ = 200 mA 1200 mA
0
25
50 75 100 Pout, OUTPUT POWER (WATTS) PEP
125
150
Figure 2. Intermodulation Distortion Products versus Output Power
Figure 3. Intermodulation Distortion versus Output Power
16 IDQ = 1200 mA 15 Gps , POWER GAIN (dB) 14 13 12 11 400 mA 800 mA Pout, OUTPUT POWER (WATTS) , DRAIN EFFICIENCY (%)
140 120 100 80 60 40 20 0 0 1 2 Pout DRAIN EFFICIENCY Gps VDS = 28 V f = 960 MHz IDQ = 800 mA
13.8 13.6 13.4 13.2 13 12.8 12.6 6 7 8 12.4 G , POWER GAIN (dB) ps
ARCHIVED 2005
200 mA VDD = 28 V f = 960 MHz 1 10 Pout, OUTPUT POWER (WATTS) 100
4 5 3 Pin, INPUT POWER (WATTS)
Figure 4. Power Gain versus Output Power
Figure 5. Output Power versus Input Power
140 120 Pout, OUTPUT POWER (WATTS) 100 80 60 40 20 0 12 14 16 18 20 22 24 26 28 1W 2W f = 960 MHz IDQ = 800 mA Pin = 5.5 W Pout, OUTPUT POWER (WATTS)
140 120 100 80 60 40 20 Pin = 5.5 W f = 960 MHz IDQ = 800 mA 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VGS, GATE-SOURCE VOLTAGE (VOLTS) TYPICAL DEVICE SHOWN
30
32
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 6. Output Power versus Supply Voltage
Figure 7. Output Power versus Gate Voltage
MRF186 4
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
TYPICAL CHARACTERISTICS
4 3.5 ID , DRAIN CURRENT (A) 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VGS, GATE-SOURCE VOLTAGE (VOLTS) 5.5 6 0 0 TYPICAL DEVICE SHOWN VDS = 10 Vdc C, CAPACITANCE (pF) 200 160 120 80 Coss 40 Crss 10 30 20 40 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 50 VGS = 0 Vdc f = 1 MHz Ciss
Figure 8. Drain Current versus Gate Voltage
Figure 9. Capacitance versus Voltage
12 Gps , POWER GAIN (dB) Gps , POWER GAIN (dB) 9 6 3 0 TJ = 200C TF = 70C 0 5 15 25 10 20 Pout, OUTPUT POWER (WATTS) 30 35 13
VDS = 28 V Pout = 120 W (PEP) f = 960 MHz IDQ = 800 mA
-10 IRL -15 Gps -20 -25 IMD -30 -35 965
ARCHIVED 2005
12.5
12 925
930
935
945 950 940 f, FREQUENCY (MHz)
955
960
Figure 10. DC Safe Operating Area
Figure 11. Broadband Circuit Performance
MOTOROLA RF DEVICE DATA
MRF186 5
Archived 2005
IMD, INTERMODULATION DISTORTION (dBc) INPUT RETURN LOSS (dB)
15
13.5
-5
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
f = 960 MHz
Zin
930 MHz
930 MHz ZOL* f = 960 MHz
Zo = 20
ARCHIVED 2005
VCC = 28 V, IDQ = 2 f MHz 930 945 960 Zin Zin
400 mA, Pout = 120 W PEP ZOL* 4.3 + j1.2 4.3 + j1.0 4.3 + j0.9
2.5 + j6.9 2.5 + j7.0 2.2 + j7.1
= Complex conjugate of source impedance. Conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current, efficiency and frequency.
ZOL* =
Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation performance. Impedances shown represent a single channel (1/2 of MRF186) impedance measurement.
Figure 12. Series Equivalent Input and Output Impedance
MRF186 6
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
VGG R1 B2 C34 VDD C7 C8 C9
B1
C1 C2 C5 C6
C3 C4 C19 C20 C12 C13 C21 R3 R4 C22
C26 R2 C24 C23 R5 C25
C28 L1 C29 C30 L2 C14 C15 C31 C32 C33
C27
B3 C11 B4 C35 VDD
ARCHIVED 2005
C10
MRF186 VGG
R6
C16
C17
C18
Figure 13. Component Placement Diagram of 930 - 960 MHz Broadband Test Fixture
MOTOROLA RF DEVICE DATA
MRF186 7
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
PACKAGE DIMENSIONS
2X
Q bbb
M
A G
A 4 L
1 2
TA
M
B
M
B
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.085 0.115 0.425 BSC 0.852 0.868 0.851 0.869 0.118 0.138 0.395 0.405 0.394 0.406 0.010 REF 0.015 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 4.57 5.69 8.26 8.51 1.52 1.78 0.10 0.15 27.94 BSC 2.46 2.72 2.16 2.92 10.80 BSC 21.64 22.05 21.62 22.07 3.00 3.51 10.03 10.29 10.01 10.31 0.25 REF 0.38 REF
B (FLANGE)
5 3 4X 4
K
4X
D bbb
M
TA
M
B
M
ccc H C
M
TA R
(LID)
M
B
M
F
ccc E
M
TA N
(LID)
M
B
M
S
(INSULATOR)
bbb M PIN 5
(INSULATOR)
M
TA
M
B
M
bbb
M
TA
M
B
T
M SEATING PLANE
CASE 375B-04 ISSUE E NI-860
STYLE 1: PIN 1. 2. 3. 4. 5.
ARCHIVED 2005
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852-26668334 Technical Information Center: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors/
MRF186 8
MOTOROLA RF DEVICE DATA
MRF186/D Archived 2005

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