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Advanced Technical Information
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PolarHVTM Power MOSFET
N-Channel Enhancement Mode
IXTA 16N50P IXTP 16N50P IXTQ 16N50P
VDSS ID25
RDS(on)
= 500 V = 16 A = 400 m
Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M
Maximum Ratings 500 500 30 V V V A A A mJ mJ V/ns W C C C C C
TO-220 (IXTP)
TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 10 TC = 25C
16 48 16 25 1000 10 300 -55 ... +150 150 -55 ... +150
G
DS
(TAB)
TO-263 (IXTA)
G
S (TAB)
TO-3P (IXTQ)
1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque TO-220 TO-263 TO-3P (TO-220)
300 260
G 1.13/10 Nm/lb.in. 4 3 5.5 g g g
Md Weight
D
S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C
Characteristic Values Min. Typ. Max. 500 3.0 5.0 10 5 50 V V nA A A
Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density
DS99323(02/05)
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
400 m
(c) 2005 IXYS All rights reserved
IXTQ 16N50P IXTA 16N50P IXTP 16N50P www..com
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 16 2250 VGS = 0 V, VDS = 25 V, f = 1 MHz 240 12 23 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 18 (External) 25 70 22 43 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 15 12 S pF pF pF ns ns ns ns nC nC nC 0.42 K/W (TO-220) (TO-3 P) 0.25 0.21 K/W K/W
Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029
TO-263 (IXTA) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthCK
VDS= 20 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 16 64 1.5 A A V
TO-220 (IXTP) Outline
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 16 A -di/dt = 100 A/s 400
ns
TO-3P (IXTQ) Outline
Pins:
1 - Gate
2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692
IXTQ 16N50P
Fig. 1. Output Characteristics @ 25C
24 VGS = 10V 20 8V 14 12 16
IXTA 16N50P IXTP 16N50P www..com
Fig. 2. Output Characteristics @ 125C
VGS = 10V 8V 7V
I D - Amperes
7V
I D - Amperes
16
10 8 6 4 6V
12 6V
8
4 5V 0 0 2 4 6 8 10 12 14 16 18
2 0 0 2 4 6 8 10 12
5V
14
16
18
20
V D S - Volts Fig. 3. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
3.4 3.1 VGS = 10V 2.8 2.6
V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. ID
VGS = 10V TJ = 125 C
R D S ( o n ) - Normalized
2.8 2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 -50 -25 0 25 50 75 100 125 150 I D = 8A I D = 16A
R D S ( o n ) - Normalized
2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 4 8 12
TJ = 25 C
16
20
24
TJ - Degrees Centigrade Fig. 5. Drain Current vs. Case Tem perature
18 16 14 18 16 14
I D - Amperes Fig. 6. Input Adm ittance
I D - Amperes
I D - Amperes
12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150
12 10 8 6 4 2 0 4 4.5 5 5.5 6 6.5 7 TJ = 125 C 25 C -40 C
TC - Degrees Centigrade
(c) 2005 IXYS All rights reserved
V G S - Volts
IXTQ 16N50P IXTA 16N50P IXTP 16N50P www..com
Fig. 7. Transconductance
24 50 45 20 TJ = -40 C 40 25 C 125 C 12
Fig. 8. Source Current vs. Source-To-Drain Voltage
g f s - Siemens
I S - Amperes
16
35 30 25 20 15 10 5 TJ = 25 C TJ = 125 C
8
4
0 0 2 4 6 8 10 12 14 16 18
0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
I D - Amperes Fig. 9. Gate Charge
10 9 8 7 VDS = 250V 10000 f = 1MHz
V S D - Volts Fig. 10. Capacitance
I G = 10mA
Capacitance - picoFarads
I D = 8A
C iss
1000
VG S - Volts
6 5 4 3 2 1 0 0 5 10 15 20 25 30 35
C oss
100
C rss 10 0 5 10 15 20 25 30 35 40
Q G - nanoCoulombs Fig. 11. Forw ard-Bias Safe Operating Area
100 1.00
V D S - Volts Fig. 12. Maxim um Transient Therm al Resistance
R DS(on) Limit 25s 10 100s 1ms TJ = 150C TC = 25C 1 10 100 1000 0.01 0.1 1 10 100 1000 10ms DC
R( t h ) J C - C / W
I D - Amperes
0.10
V D S - Volts
Pulse Width - milliseconds

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