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Datasheet File OCR Text: |
www..com DC COMPONENTS CO., LTD. R DC9018 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in AM/FM amplifier and local oscillator of FM/VHF tuner. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Pinning 1 = Emitter 2 = Base 3 = Collector Absolute Maximum Ratings(TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC IB PD TJ TSTG o C) Rating 30 15 5 50 10 400 +150 -55 to +150 Unit V V V mA mA mW o o Symbol .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 321 .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO (1) Min 30 15 5 28 700 2% Typ 1100 1.3 Max 50 0.5 270 1.7 Unit V V V nA V MHz pF Test Conditions IC=100A IC=1mA IE=100A VCB=12V IC=10mA, IB=1mA IC=1mA, VCE=5V IC=5mA, VCE=5V VCB=10V, IE=0 Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain (1) VCE(sat) hFE fT Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Cob 380s, Duty Cycle Classification of hFE Rank Range D 28~45 E 39~60 F 54~80 G 72~108 H 97~146 I 132~198 J 180~270 |
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