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| UTC UT136F/G TRIACS DESCRIPTION Passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. TRIAC SYMBOL MT2 1 TO-220 G MT1 1:MT1 2:MT2 3:GATE ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive peak off-state voltages UT136F/G-5www..com VDRM UT136F/G-6 UT136F/G-8 RMS on-state current full sine wave, Tmb 107 C Non-repetitive peak on-state current full sine wave, Tj = 25 C prior to surge t = 20ms t = 16.7 ms I2t for fusing (t = 10 ms) Repetitive rate of rise of on-state current after triggering ITM = 6 A, IG = 0.2A,dIG /dt = 0.2A/s T2+ G+ T2+ GT2- GT2- G+ IT(RMS) 500* 600* 800 4 V SYMBOL RATINGS UNIT A ITSM I2t 25 27 3.1 A A2s dIT /dt 50 50 50 10 A/s Peak gate voltage VGM 5 V Peak gate current IGM 2 A Peak gate power PGM 5 W Average gate power (over any 20 ms period) PG(AV) 0.5 W Storage temperature Tstg -40 ~ 150 Operating junction temperature Tj 125 *Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch to the on-state. The rate of rise of current should not exceed 3A/s. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R401-010,C UTC UT136F/G THERMAL RESISTANCES PARAMETER Thermal resistance, Junction to mounting base full cycle half cycle Thermal resistance, Junction to ambient (In free air) TRIAC SYMBOL Rth j-mb Rth j-a 60 MIN TYP MAX 3.0 3.7 UNIT K/W K/W STATIC CHARACTERISTICS (Tj=25C,unless otherwise specified) PARAMETER Gate trigger current IGT SYMBOL CONDITIONS VD=12V, IT=0.1A T2+ G+ T2+ GT2- GT2- G+ VD=12V, IGT=0.1A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V, IGT = 0.1 A IT=5A VD=12V, IT=0.1A VD=400V, IT=0.1A, Tj=125C VD=VDRM(max) , Tj=125C MIN TYP MAX UT136F UT136G UNIT 5 8 11 30 7 16 5 7 5 1.4 0.7 0.4 0.1 25 25 25 70 20 30 20 30 15 1.70 1.5 50 50 50 100 30 45 30 45 30 mA Latching current IL mA Holding current On-state voltage Gate trigger voltage IH VT VGT 0.25 mA V V V mA Off-state leakage current ID 0.5 DYNAMIC CHARACTERISTICS(Tj=25C,unless otherwise specified) PARAMETER Critical rate of rise of Off-state voltage Critical rate of change of Commutating voltage Gate controlled turn-on time SYMBOL dVD /dt CONDITIONS VDM = 67% VDRM(max) , Tj =125C, exponential waveform, gate open circuit VDM=400V, Tj=95C, IT(RMS)=4A, dIcom /dt =1.8A/ms, gate open circuit ITM = 6 A, VD= VDRM(max) , IG=0.1A, dIG/dt=5A/s MIN UT136F UT136G TYP 250 MAX UNIT V/s 50 200 dVcom/dt tgt 10 50 2 V/s s UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R401-010,C UTC UT136F/G TYPICAL CHARACTERISTICS 8 Ptot/W 7 6 5 4 3 2 1 0 0 1 2 3 4 Tmb(max)/C IT(RMS)/A TRIAC 101 104 107 5 4 3 2 1 107 =180 =120 =90 110 =60 113 =30 116 119 122 125 5 0 -50 0 IT(RMS)/A Fig.1. Maximum on-state dissipation,Ptot vs rms on-state current, I T (RMS) where=conduction angle. ITSM/A 1000 IT T 100 ITSM 10 time 8 6 4 T2-G+ quadrant 10 10us 2 10ms 100ms 0 0.01 0.1 Tj initial=25max 50 Tmb/C 100 150 Fig.4. Maximum permissible rms current lT(RMS) vs mounting base Temperature Tmb. IT(RMS)/A 12 dIT/dt limit 100us 1ms 1 10 T/s Fig.2.Maximum Permissible non-repetitive peak on-state Current ITSM vs pulse width tp, for sinusoidal currents,tp20ms ITSM/A IT T Tj initial=25 surge duration /S Fig. 5.Maximum permissible repetitive rms on-state current lT(RMS),vs surge duration,for sinusoidal currents,f=50HZ;Tmb107 VGT(Tj) VGT(25) 30 25 20 15 10 5 0 ITSM time max 1.6 1.4 1.2 1 0.8 0.6 0 1 10 100 1000 0.4 -50 0 50 50 Tj/ 100 100 150 150 Number of cycles at 50Hz Fig3.Maximum Permissible non-repetitive peak on-state current ITSM,vs number of cycles,for sinusoidal currents,f=50HZ. Fig.6. Normalised gate trigger voltage VGT(Tj)/VGT(25),vs junction temperature Tj. UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R401-010,C UTC UT136F/G IGT(Tj) IGT(25) T2+G+ T2+GT2-GT2-G+ TRIAC 12 10 8 6 4 2 IT/A Tj=125 Tj=25 3 2.5 2 1.5 1 0.5 max typ Vo=1.27V Rs=0.091 Ohms 0 -50 0 50 Tj/ 100 150 0 0 0.5 1 1.5 VT/V 2 2.5 3 Fig. 7.Normalised gate trigger Current IGT(Tj)/I GT(25),vs junction temperature Tj. IL(Tj) IL(25) Fig.10.Typical and maximum on-state characteristic. 3 2.5 2 1.5 1 0.5 10 Zth j-mb(K/W) unidirectional bidirectional 1 0.1 PD tp t 0 -50 0 50 Tj/ 100 150 0.01 10us 0.1ms 1ms 10ms tp/s 0.1s 1s 10s Fig.8.Normalised latching Current I L(Tj)/I L(25), vs junction temperature Tj. IH(Tj) 3 IH(25) 2.5 2 1.5 1 0.5 0 -50 0 50 Tj/ Fig. 9.Normalised holding current I H(Tj)/I H(25), vs junction temperature Tj. 100 150 1 0 10 100 1000 Fig.11.Transient thermal impedance Zthj-mb,vs pulse width tp. dV/dt(V/us) off-state dV/dt limit UT136G UT136F dlcom/dt= 5.1A/ms 3.9 3 2.3 1.8 1.4 150 100 Tj/ Fig.12.Typical commutation dV/dt vs junction temperature,parameter commutation dl T/dt.The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dl T/dt. 50 UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R401-010,C UTC UT136F/G TRIAC UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R401-010,C |
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