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STP25N06 STP25N06FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STP25N06 STP25N06FI
s s s s s s s s
V DSS 60 V 60 V
R DS( on) < 0.065 < 0.065
ID 25 A 16 A
TYPICAL RDS(on) = 0.048 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION
3 1 2 1 2
3
TO-220
ISOWATT220
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS INTERNAL SCHEMATIC DIAGRAM s DC-DC & DC-AC CONVERTERS .com s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
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ABSOLUTE MAXIMUM RATINGS
Symbol Parameter STP25N06 VD S V DG R V GS ID ID ID M(*) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Value STP25N06FI 60 60 20 25 17 100 90 0.6 -65 to 175 175 16 11 100 40 0.27 2000
Unit
V V V A A A W W/o C V
o o
C C
(*) Pulse width limited by safe operating area
December 1996
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STP25N06/FI
THERMAL DATA
TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1.57 62.5 0.5 300 ISOWATT220 3.75
o o o
C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%)
o
Max Value 25 100 25 17
Unit A mJ mJ A
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF
Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VG S = 0 Min. 60 1 10 100 Typ. Max. Unit V A A nA
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I DS S IG SS
.com Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 T c = 125 oC
Gate-body Leakage Current (V D S = 0) V GS = 20 V
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ON ()
Symbol V G S(th) R DS( on) I D( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V Test Conditions ID = 250 A ID = 12.5 A 25 Min. 2 Typ. 2.9 0.048 Max. 4 0.065 Unit V A
V DS > ID( on) x RD S(on) max V GS = 10 V
DYNAMIC
Symbol gfs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > ID( on) x RD S(on) max V DS = 25 V f = 1 MHz ID = 12.5 A VG S = 0 Min. 7 Typ. 11 700 320 90 900 450 150 Max. Unit S pF pF pF
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STP25N06/FI
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions V DD = 30 V ID = 3 A VGS = 10 V R G = 50 (see test circuit, figure 3) V DD = 40 V ID = 25 A VGS = 10 V R G = 50 (see test circuit, figure 5) V DD = 40 V ID = 25 A V GS = 10 V Min. Typ. 30 90 230 Max. 45 130 Unit ns ns A/s
Qg Q gs Q gd
Total Gate Charge Gate-Source Charge Gate-Drain Charge
26 8 9
40
nC nC nC
SWITCHING OFF
Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 40 V ID = 25 A VGS = 10 V R G = 50 (see test circuit, figure 5) Min. Typ. 80 80 170 Max. 120 120 250 Unit ns ns ns
SOURCE DRAIN DIODE
Symbol IS D I SDM(*) Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions Min. Typ. Max. 25 100 I SD = 25 A Unit A A V ns C A
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V S D () t rr Q rr I RRM
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VG S = 0 80 0.22 5.5
1.5
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I SD = 25 A di/dt = 100 A/s V DD = 30 V T j = 150 o C (see test circuit, figure 5)
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
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STP25N06/FI
Thermal Impedeance For TO-220
Thermal Impedance For ISOWATT220
Derating Curve For TO-220
Derating Curve For ISOWATT220
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Output Characteristics
Transfer Characteristics
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Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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Normalized Gate Threshold Voltage vs Temperature
Normalized On Resistance vs Temperature
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Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
Switching Safe Operating Area
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Accidental Overload Area
Source-drain Diode Forward Characteristics
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STP25N06/FI
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge Test Circuit
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Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time
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STP25N06/FI
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 .com 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
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DIA.
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A
C
D1
L2 F1
D
G1
E
Dia. F2 F
L5 L7 L6
L9
L4
G
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H2
P011C
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STP25N06/FI
ISOWATT220 MECHANICAL DATA
DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.4 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 .com 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.015 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
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O
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A
B
L3 L6 L7
F1
D
O
F
G1
E
H
F2
123 L2 L4
P011G
G
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STP25N06/FI
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequ ences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical compone in life support devices or systems without express nts written approval of SGS-THOMSON Microelectonics. (c) 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .
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