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| PD - 91879A IRF7207 HEXFET(R) Power MOSFET l l l l l l www..com Generation 5 Technology P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S 1 8 7 A D D D D S S G 2 VDSS = -20V 3 6 4 5 RDS(on) = 0.06 Description Fifth Generation HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. T op V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TC = 70C VGS VGSM EAS dv/dt TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10s Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. -20 -5.4 -4.3 -43 2.5 1.6 0.02 12 -16 140 -5.0 -55 to + 150 Units V A W W/C V V V/ns C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Typ. --- Max. 50 Units C/W www.irf.com 1 6/5/00 IRF7207 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS www..com IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -20 --- --- --- -0.7 8.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.011 --- --- --- --- --- --- --- --- 15 2.2 5.7 11 24 43 41 780 410 200 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.06 VGS = -4.5V, ID = -5.4A 0.10 VGS = -2.7V, ID = -2.7A --- V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -5.4A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 125C -100 VGS = 12V nA 100 VGS = -12V 22 ID = -5.4A 3.3 nC VDS = -10V 8.6 VGS = -4.5V, --- VDD = -10V --- ID = -1.0A ns --- RG = 6.0 --- RD = 10, --- VGS = 0V --- pF VDS = -15V --- = 1.0MHz, Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 42 50 -3.1 A -43 -1.0 63 75 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -3.1A, VGS = 0V TJ = 25C, I F = -3.1A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ISD -5.4A, di/dt -79A/s, VDD V(BR)DSS, TJ 150C Starting TJ = 25C, L = 9.6mH RG = 25, IAS = -5.4A. Pulse width 300s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec 2 www.irf.com IRF7207 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP 100 VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP www..com 10 10 -2.25V 20s PULSE WIDTH T = 25 C J 1 10 -2.25V 1 0.1 1 0.1 20s PULSE WIDTH T = 150 C J 1 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 ID = -5.4A TJ = 25 C TJ = 150 C 10 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 1.5 1.0 0.5 1 2.0 V DS = -10V 20s PULSE WIDTH 5.0 3.0 4.0 6.0 0.0 -60 -40 -20 VGS = -4.5V -10V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7207 1600 -VGS , Gate-to-Source Voltage (V) 1200 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = -5.4A 8 VDS = -10V C, Capacitance (pF) Ciss 800 6 www..com C oss 400 4 C rss 2 0 1 10 100 0 0 5 10 FOR TEST CIRCUIT SEE FIGURE 13 20 25 15 30 -VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10 -ID , Drain Current (A) I TJ = 150 C 100us 10 1 TJ = 25 C 1ms 0.1 0.4 V GS = 0 V 0.6 0.7 0.9 1.1 1.2 1.4 1 TA = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7207 6.0 400 EAS , Single Pulse Avalanche Energy (mJ) 5.0 -ID , Drain Current (A) 300 ID -2.4A -4.3A BOTTOM -5.4A TOP 4.0 www..com 2.0 3.0 200 100 1.0 0.0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC , Case Temperature ( C) Starting TJ , Junction Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 P DM t1 t2 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7207 SO-8 Package Details D -B- D IM 5 IN C H E S M IN .05 32 .00 40 .01 4 .00 75 .18 9 .15 0 M AX .06 88 .00 98 .01 8 .009 8 .196 .15 7 M ILLIM E T E R S M IN 1.3 5 0.1 0 0.3 6 0.19 4.80 3.8 1 M AX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0 .2 5 (.0 1 0 ) M AM 5 8 E -A- 7 A1 B C D E e e1 H K L 8X 6 C 8X www..com e 6X 1 2 3 4 e1 A K x 4 5 .05 0 B A S IC .02 5 B A S IC .22 84 .01 1 0.16 0 .244 0 .01 9 .05 0 8 1.27 B A S IC 0 .635 B A S IC 5.8 0 0.2 8 0.4 1 0 6.20 0.48 1.27 8 -C B 8X 0 .2 5 (.0 1 0 ) A1 M CASBS 0 .1 0 (.0 0 4 ) L R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E .. 6 .4 6 ( .2 5 5 ) 1 .7 8 (.0 7 0 ) 8X 1 .2 7 ( .0 5 0 ) 3X Part Marking 6 www.irf.com IRF7207 Tape and Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .48 4 ) 1 1 .7 ( .46 1 ) www..com 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. 33 0.0 0 (1 2 .9 9 2 ) M AX . 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 6/00 www.irf.com 7 |
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