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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1314-9L TECHNICAL DATA FEATURES HIGH POWER BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 13.75GHz to 14.5GHz HIGH GAIN HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz LOW INTERMODULATION DISTORTION IM3(Min.)=-25dBc at Po=33dBm Single Carrier Level RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 Tch IDS1 G1dB SYMBOL P1dB ( Ta= 25C ) UNIT MIN. dBm 39.0 5.0 -25 TYP. MAX. 39.5 6.0 2.8 26 2.8 3.0 3.0 80 CONDITIONS VDS= 9V IDSset=2.2A dB A % dBc A C f = 13.75 to 14.5GHz add IM3 Two Tone Test Po= 33.0dBm (Single Carrier Level) (VDS X IDS+Pin-P1dB) X Rth(c-c) Recommended gate resistance(Rg) : Rg= 150 (MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL ( Ta= 25C ) UNIT MIN. mS V A V C/W -0.7 -5 TYP. MAX. 2200 -2.0 5.0 3.0 -4.5 3.7 CONDITIONS VDS= 3V IDS= 2.4A VGSoff VDS= 3V IDS= 72mA IDSS VDS= 3V VGS= 0V VGSO IGS= -72A Rth(c-c) Channel to Case gm The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Mar. 2006 TIM1314-9L ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage ( Ta= 25C ) SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 5.7 30.0 175 -65 to +175 PACKAGE OUTLINE (2-9D1B) Unit: mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM1314-9L RF PERFORMANCE Output Power (Pout) vs. Frequency Pout(dBm) VDS=9V 41 IDS2.8A Pin=33.5 dBm 40 39 38 37 13.75 14.0 14.25 14.5 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) 42 freq.=14.5GHz 41 40 39 VDS=9V IDS2.8A Pout 50 40 Pout(dBm) 38 37 36 35 34 33 27 29 31 33 35 37 10 30 add 20 Pin(dBm) 3 add(%) TIM1314-9L Power Dissipation(PT) vs. Case Temperature(Tc) 40 PT(W) 30 20 10 0 0 40 80 Tc( C ) 120 160 200 IM3 vs. Output Power Characteristics 0 VDS=9V -10 freq.=14.5GHz f=5MHz -20 IM3(dBc) -30 -40 -50 28 30 32 34 36 38 Pout(dBm) @Single carrier level 4 |
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