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| STL150N3LLH5 N-channel 30 V, 0.0014 , 35 A, PowerFLATTM (6x5) STripFETTM V Power MOSFET Features Type STL150N3LLH5 VDSS 30 V RDS(on) max ID <0.00175 35 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses PowerFLATTM ( 6x5 ) Application Switching applications Figure 1. Internal schematic diagram Description This STripFETTMV Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. Table 1. Device summary Marking 150N3LLH5 Package PowerFLATTM (6x5) Packaging Tape and reel Order code STL150N3LLH5 June 2009 Doc ID 14092 Rev 4 1/12 www.st.com 12 Contents STL150N3LLH5 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 14092 Rev 4 STL150N3LLH5 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID(1) ID (1) ID(2) ID (3) (3) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (continuous) at TC = 25 C Drain current (continuous) at TC=100 C Drain current (pulsed) Total dissipation at TC = 25 C Total dissipation at TC = 25 C Derating factor Value 30 22 150 94 35 21.8 140 80 4 0.03 -55 to 150 Unit V V A A A A A W W W/C C IDM PTOT (1) PTOT (3) TJ Tstg Operating junction temperature Storage temperature 1. The value is rated according Rthj-c 2. The value is rated according Rthj-pcb 3. Pulse width limited by safe operating area Table 3. Symbol Rthj-case Rthj-pcb (1) Thermal resistance Parameter Thermal resistance junction-case (drain) (steady state) Thermal resistance junction-ambient Value 1.56 31.3 Unit C/W C/W 1. When mounted on FR-4 board of 1inch, 2oz Cu, t < 10 sec Table 4. Symbol IAV EAS Avalanche data Parameter Not-repetitive avalanche current, (pulse width limited by Tj Max) Single pulse avalanche energy (starting TJ = 25 C, ID = IAV , VDD = 24 V) Value 17 300 Unit A mJ Doc ID 14092 Rev 4 3/12 Electrical characteristics STL150N3LLH5 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS= 0 VDS = Max rating, VDS = Max rating @125 C VGS = 22 V VDS= VGS, ID = 250 A VGS= 10 V, ID= 17.5 A VGS= 4.5 V, ID= 17.5 A 1 1.55 Min. 30 1 10 100 Typ. Max. Unit V A A nA V 2.2 0.0014 0.00175 0.0019 0.0024 Table 6. Symbol Ciss Coss Crss Qg Qgs Qgd RG Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 25 V, f=1 MHz, VGS=0 VDD=15 V, ID = 35 A VGS =4.5 V (see Figure 14) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain Min. Typ. 5800 1147 127 40 13.4 14.9 Max. Unit pF pF pF nC nC nC - - - Gate input resistance 1.1 - Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=15 V, ID= 17.5 A, RG=4.7 , VGS=10 V (see Figure 13) Min. Typ. 17.2 30.8 65.8 47.8 Max. Unit ns ns ns ns - 4/12 Doc ID 14092 Rev 4 STL150N3LLH5 Electrical characteristics Table 8. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 35 A, VGS=0 ISD = 35 A, di/dt = 100 A/s, VDD= 25 V Test conditions Min. 43.8 46 2.1 Typ. Max. 35 140 1.1 Unit A A V ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% Doc ID 14092 Rev 4 5/12 Electrical characteristics STL150N3LLH5 2.1 Figure 2. ID(A) Electrical characteristics (curves) Safe operating area HV42710 Figure 3. Thermal impedance 100 a is are n) this DS(o on x R ion ma t era by Op ited lim TJ = 150 C TC = 25 C Single pulse 10 10 ms 100 ms 1 1s 0.1 0.01 0.1 1 10 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. BVDSS (norm) Normalized BVDSS vs temperature HV42790 Figure 7. RDS(on) (m) 2.5 Static drain-source on resistance HV42770 1.1 1.05 2.0 1 1.5 0.95 0.9 1.0 0.85 -55 -30 -5 20 45 70 95 120 145 TJ(C) 0.5 0 10 20 30 ID(A) 6/12 Doc ID 14092 Rev 4 STL150N3LLH5 Figure 8. VGS(V) Electrical characteristics Capacitance variations HV42760 f=1MHz Gate charge vs gate-source voltage Figure 9. HV42730 VDD=15 V VGS=5 V ID=34 A C(pF) 12 10 8 10000 8000 Ciss 6000 6 4 2 0 0 20 40 60 Qg(nC) 4000 2000 Crss Coss 0 0 10 20 VDS(V) Figure 10. Normalized gate threshold voltage vs temperature VGS(th) (norm) 1.2 HV42740 ID=250A Figure 11. Normalized on resistance vs temperature RDS(on) (norm) HV42750 1.6 ID=17 A VGS=10 V 1 1.4 0.8 1.2 0.6 1 0.4 0.8 0.2 -55 -30 -5 20 45 70 95 120 145 TJ (C) 0.6 -55 -30 -5 20 45 70 95 120 145 TJ(C) Figure 12. Source-drain diode forward characteristics VSD(V) 0.8 0.7 TJ=25C 0.6 0.5 TJ=175C 0.4 0.3 0 10 20 30 ID(A) TJ=-55C HV42780 Doc ID 14092 Rev 4 7/12 Test circuits STL150N3LLH5 3 Test circuits Figure 14. Gate charge test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 8/12 Doc ID 14092 Rev 4 STL150N3LLH5 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 14092 Rev 4 9/12 Package mechanical data STL150N3LLH5 PowerFLATTM(6x5) mechanical data mm. Min. A A1 A3 b D D1 D2 E E1 E2 E4 e L 0.70 3.43 2.58 4.15 0.35 0.80 Typ. 0.83 0.02 0.20 0.40 5.00 4.75 4.20 6.00 5.75 3.48 2.63 1.27 0.80 0.90 0.027 3.53 2.68 0.135 4.25 0.163 0.47 0.013 Max. 0.93 0.05 Min. 0.031 inch Typ. 0.32 0.0007 0.007 0.015 0.196 0.187 0.165 0.236 0.226 0.137 0.103 0.050 0.031 0.035 0.139 0.105 0.167 0.018 Max. 0.036 0.0019 DIM. 10/12 Doc ID 14092 Rev 4 STL150N3LLH5 Revision history 5 Revision history Table 9. Date 22-Oct-2007 01-Apr-2008 23-Sep-2008 12-Jun-2009 Document revision history Revision 1 2 3 4 First release Document status promoted from preliminary data to datasheet VGS value has been changed on Table 2 and Table 5 VGS(th) value has been changed on Table 5 Changes Doc ID 14092 Rev 4 11/12 STL150N3LLH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 Doc ID 14092 Rev 4 |
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