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APTGF250DA60D3G
Boost chopper NPT IGBT Power Module
VCES = 600V IC = 250A @ Tc = 80C
3
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * High level of integration * M6 power connectors Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
Q2 6 7
1
2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 600 400 250 600 20 1250 600A @ 520V Unit V
September, 2008 1-5 APTGF250DA60D3G - Rev 0
A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF250DA60D3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE = 15V IC = 300A Tj = 125C VGE = VCE , IC = 6 mA VGE = 20V, VCE = 0V Min Typ 1.95 2.2 5.8 Max 500 2.45 6.5 400 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Test Conditions VGE = 0V ; VCE = 25V f = 1MHz VGE=15V, IC=300A VCE=300V Inductive Switching (25C) VGE = 15V VBus = 300V IC = 300A RG = 6 Inductive Switching (125C) VGE = 15V VBus = 300V IC = 300A RG = 6 VGE = 15V Tj = 125C VBus = 300V IC = 300A Tj = 125C RG = 6 VGE 15V ; VBus = 360V tp 10s ; Tj = 125C Min Typ 13 1.2 720 150 72 530 40 160 75 550 50 14 mJ 13 1350 A ns Max Unit nF nC
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 300A VR = 300V IF = 300A VGE = 0V Test Conditions VR=600V Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 600 Typ Max 750 1000 300 1.25 1.2 150 250 20 32 4 7.6 1.6 Unit V A A V ns C mJ
September, 2008 2-5 APTGF250DA60D3G - Rev 0
di/dt =4800A/s
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APTGF250DA60D3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight For terminals To Heatsink M6 M6 IGBT Diode 2500 -40 -40 -40 3 3 Min Typ Max 0.1 0.21 150 125 125 5 5 350 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
D3 Package outline (dimensions in mm)
1
A
DETAIL A
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3-5
APTGF250DA60D3G - Rev 0
September, 2008
APTGF250DA60D3G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 600 500 400
TJ=125C VGE=20V VGE=12V TJ = 125C VGE=15V
600 500
IC (A)
TJ=25C
400
IC (A)
300 200 100 0 0 0.5 1 1.5 2 VCE (V) 2.5
300 200 100 0
VGE=9V
3
3.5
0
1
2
3 VCE (V)
4
5
600 500 400
Transfert Characteristics 30 25 20 E (mJ) 15 10
TJ=25C
Energy losses vs Collector Current
VCE = 300V VGE = 15V RG = 6 TJ = 125C
Eon Eoff
IC (A)
300 200 100 0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 40
VCE = 300V VGE =15V IC = 300A TJ = 125C Eon TJ=125C
Err
5 0 0 150 300 IC (A) 450 600
700 600 500 IC (A)
Reverse Safe Operating Area
30 E (mJ)
Eoff
20
400 300 200
VGE=15V TJ=125C RG=6
10
Err
100 0 0
0 0 5 10 15 20 25 Gate Resistance (ohms) 30
100
200
300 VCE (V)
400
500
600
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.12 Thermal Impedance (C/W)
0.08 0.06 0.04 0.02
0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
0 0.00001
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4-5
APTGF250DA60D3G - Rev 0
September, 2008
0.1
IGBT
0.9
APTGF250DA60D3G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 70 60 50 40 30 20 10 0 0 100 200 IC (A) 300 400
hard switching ZCS ZVS VCE=300V D=50% RG=6 TJ=125C TC=75C
Forward Characteristic of diode 600 500 400 IF (A) 300 200 100 0 0 0.3 0.6 0.9 VF (V) 1.2 1.5
TJ=25C TJ=125C
0.22 Thermal Impedance (C/W)
0.9
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Diode
0.18
0.7
0.14
0.5
0.1 0.06
0.3 0.1 Single Pulse
0.02
0.05
-0.02 0.00001
0.0001
0.001 0.01 0.1 rectangular Pulse Duration (Seconds)
1
10
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGF250DA60D3G - Rev 0
Microsemi reserves the right to change, without notice, the specifications and information contained herein
September, 2008

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