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Part no.
ZXMN3F318DN8
30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET
Summary Device
Q1
V(BR)DSS QG (nC)
30 12.9
RDS(on) ()
0.024 @ VGS= 10V 0.039 @ VGS= 4.5V 0.035 @ VGS= 10V
ID (A) 7.3 5.7 6 4.8
Q2
30
9
0.055 @ VGS= 4.5V
Description
This new generation dual Trench MOSFET from Zetex features low on-resistance achievable with low (4.5V) gate drive.
Features
* * *
Low on-resistance 4.5V gate drive capability Low profile SOIC package
Applications
* * * * *
DC-DC Converters SMPS Load switching Motor control Backlighting
Q2
Q1
Ordering information
Device Reel size (inches) Tape width (mm) Quantity per reel
ZXMN3F318DN8TA
7
12
500
Device marking
ZXMN 3F318 Pinout - top view
Issue 1 - March 2008
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ZXMN3F318DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT Q1 LIMIT Q2 UNIT
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS=10V; TA=25C (b) VGS=10V; TA=70C (b) VGS=10V; TA=25C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at TA =25C (a) (d) Linear Derating Factor Power Dissipation at TA =25C (a) (e) Linear Derating Factor Power Dissipation at TA =25C (b) (d) Linear Derating Factor Operating and Storage Temperature Range THERMAL RESISTANCE
PARAMETER
VDSS VGS ID
30 20 7.3 5.9 5.7
30 20 6 4.8 4.6 25 3.3 25 1.25 10
V V A
IDM IS ISM PD
33 3.5 33
A A A W mW/C W mW/C W mW/C
C
PD
1.8 14
PD
2.1 17
Tj, Tstg
-55 to +150
SYMBOL
VALUE
UNIT
Junction to Ambient (a) (d) Junction to Ambient (a) (e) Junction to Ambient (b) (d) Junction to Lead (f)
RJA RJA RJA RJL
100 70 60 53
C/W C/W C/W C/W
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For a device with two active die running at equal power. (f) Thermal resistance from junction to solder-point (at the end of the drain lead). Issue 1 - March 2008
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ZXMN3F318DN8
Q1 Thermal Characteristics
100
ID Drain Current (A)
10 Limited 1
DC 1s 100ms Single Pulse Tamb=25C One active die 10ms 1ms 100s
Max Power Dissipation (W)
RDS(on)
100m 10m 1m 100m
VDS Drain-Source Voltage (V)
1
10
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
Two active die
One active die
0
20
40
60
80
100 120 140 160
Temperature (C)
Safe Operating Area
110 T amb=25C 100 One active die 90 80 70 D=0.5 60 50 40 D=0.2 30 20 10 0 100 1m 10m 100m
Derating Curve
Thermal Resistance (C/W)
Maximum Power (W)
100
Single Pulse T amb=25C One active die
10
Single Pulse D=0.05 D=0.1
1 100 1m 10m 100m 1 10 100 1k
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
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ZXMN3F318DN8
Q1 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
V(BR)DSS IDSS IGSS VGS(th) RDS(on)
30 0.5 100 1.0 3.0 0.024
V A nA V
ID= 250A, VGS=0V VDS= 30V, VGS=0V VGS=20V, VDS=0V ID= 250A, VDS=VGS VGS= 10V, ID= 7.0A
0.039 Forward Transconductance (1) (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On-Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1)
S
VGS= 4.5V, ID = 6.0A VDS= 15V, ID= 7A
gfs
16.5
Ciss Coss Crss
608 132 71
pF pF pF
VDS= 15V, VGS=0V f=1MHz
td(on) tr td(off) tf Qg Qgs Qgd
2.9 3.3 16 8 12.9 2.5 2.52
ns ns ns ns nC nC nC
VDD= 15V, ID= 1A RG6.0, VGS= 10V
VDS= 15V, VGS= 10V ID= 7A
VSD trr Qrr
0.82
1.2
V
Tj=25C, IS= 1.7A, VGS=0V
Reverse Recovery Time (3) Reverse Recovery Charge (3) (1) (2) (3)
12 4.8
ns nC
Tj=25C, IS= 2.2A, di/dt=100A/s
Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. Switching characteristics are independent of operating junction temperature. For design aid only, not subject to production testing.
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ZXMN3F318DN8
Q1 Typical Characteristics
10V
5V
ID Drain Current (A)
3.5V
ID Drain Current (A)
10
4V
T = 150C
10V
4V 3.5V 3V
VGS
10
1
3V
1
2.5V
0.1
T = 25C
0.1
2V
2.5V VGS
0.01 0.1
1.5V
0.01
0.1
VDS Drain-Source Voltage (V)
1
10
VDS Drain-Source Voltage (V)
1
10
Output Characteristics
1.6
Output Characteristics
Normalised RDS(on) and VGS(th)
10
VDS = 10V
VGS = 10V
ID Drain Current (A)
1.4 1.2 1.0 0.8 0.6 0.4 -50 0
ID = 7A
RDS(on)
T = 150C
1
VGS(th) VGS = VDS ID = 250uA
T = 25C
0.1
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance (W) 1000
T = 25C
VGS Gate-Source Voltage (V)
2
3
4
Tj Junction Temperature (C)
50
100
150
Normalised Curves v Temperature
10
T = 150C
VGS
100
3V
ISD Reverse Drain Current (A)
2.5V
1
10
3.5V
0.1
T = 25C
1 0.1 0.01 0.01
4V 4.5V 10V
0.01
Vgs = -3V
0.1
On-Resistance v Drain Current
ID Drain Current (A)
1
10
1E-3 0.2
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage
Q1 Typical Characteristics
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ZXMN3F318DN8
900 800
VGS = 0V f = 1MHz CISS COSS CRSS
VGS Gate-Source Voltage (V)
700 600 500 400 300 200 100 0 1
10
10 9 8 7 6 5 4 3 2 1 0
ID = 7A
C Capacitance (pF)
VDS = 15V
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test Circuits
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ZXMN3F318DN8
Q2 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
V(BR)DSS IDSS IGSS VGS(th) RDS(on)
30 0.5 100 1.0 3.0 0.035
V A nA V
ID= 250A, VGS=0V VDS= 30V, VGS=0V VGS=20V, VDS=0V ID= 250A, VDS=VGS VGS= 10V, ID= 5.0A
0.055 Forward Transconductance (1) (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On-Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1)
S
VGS= 4.5V, ID = 4A VDS= 15V, ID= 5A
gfs
11.8
Ciss Coss Crss
430 101 56
pF pF pF
VDS= 15V, VGS=0V f=1MHz
td(on) tr td(off) tf Qg Qgs Qgd
2.5 3.3 11.5 6.3 9 1.7 2
ns ns ns ns nC nC nC
VDD= 15V, ID= 1A RG6.0, VGS= 10V
VDS= 15V, VGS= 10V ID= 5A
VSD trr Qrr
0.82
1.2
V
Tj=25C, IS= 1.7A, VGS=0V
Reverse Recovery Time (3) Reverse Recovery Charge (3)
12 4.9
ns nC
Tj=25C, IS= 2.1A, di/dt=100A/s
1 Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 2 Switching characteristics are independent of operating junction temperature. 3 For design aid only, not subject to production testing.
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ZXMN3F318DN8
Q2 Typical Characteristics
10V
ID Drain Current (A)
ID Drain Current (A)
10
4.5V 4V
VGS
T = 150C
10V
4.5V
4V 3.5V
VGS
10
3.5V
3V
1
3V
1
2.5V
0.1
T = 25C 2.5V
0.1
2V
0.01 0.1
0.01
VDS Drain-Source Voltage (V)
1
10
0.1
VDS Drain-Source Voltage (V)
1
10
Output Characteristics
10
Output Characteristics
Normalised RDS(on) and VGS(th)
VDS = 10V
1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 0
VGS = 10V ID = 5A RDS(on)
ID Drain Current (A)
1
T = 150C
0.1
T = 25C
VGS(th) VGS = VDS ID = 250uA
0.01
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance ()
1000
T = 25C
VGS Gate-Source Voltage (V)
2
3
4
Tj Junction Temperature (C)
50
100
150
Normalised Curves v Temperature
10
T = 150C
VGS
100
3V
ISD Reverse Drain Current (A)
2.5V
1
10 1 0.1 0.01 0.01
3.5V 4V 4.5V 10V
0.1
T = 25C
0.01
0.1
On-Resistance v Drain Current
ID Drain Current (A)
1
10
1E-3 0.2
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage
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ZXMN3F318DN8
Q2 Typical Characteristics
600
VGS Gate-Source Voltage (V)
VGS = 0V
C Capacitance (pF)
500 400 300 200 100 0 1
CISS
f = 1MHz
COSS CRSS
10
10 9 8 7 6 5 4 3 2 1 0
ID = 5A
VDS = 15V
0
1
2
VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage
Q - Charge (nC)
3
4
5
6
7
8
9
Gate-Source Voltage v Gate Charge
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ZXMN3F318DN8
Packaging details - SO8
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ZXMN3F318DN8
Intentionally left blank
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ZXMN3F318DN8
Definitions Product change Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user's application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated . As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Diodes Zetex Semiconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com or www.diodes.com Diodes Inc. does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Diodes Zetex is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: "Preview" Future device intended for production at some point. Samples may be available "Active" Product status recommended for new designs "Last time buy (LTB)" Device will be discontinued and last time buy period and delivery is in effect "Not recommended for new designs" Device is still in production to support existing designs and production "Obsolete" Production has been discontinued Datasheet status key: "Draft version" This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. "Provisional version" This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. "Issue" This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. Diodes Zetex sales offices Europe Zetex GmbH Kustermann-park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Diodes Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Diodes Incorporated 15660 N Dallas Parkway Suite 850, Dallas TX75248, USA Telephone (1) 972 385 2810 www.diodes.com
(c) 2008 Published by Diodes Incorporated
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