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BFP720
SiGe:C Heterojunction Wideband RF Bipolar Transistor
Data Sheet
Revision 1.0, 2009-01-20
RF & Protection Devices
Edition 2009-01-20 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BFP720
BFP720 SiGe:C Heterojunction Wideband RF Bipolar Transistor Revision History: 2009-01-20, Revision 1.0 Previous Revision: Page Subjects (major changes since last revision) Converted to the new IFX Template. Business Unit, Infineon Logo and the Trademarks were changed.
Trademarks of Infineon Technologies AG A-GOLDTM, BlueMoonTM, COMNEONTM, CONVERGATETM, COSICTM, C166TM, CROSSAVETM, CanPAKTM, CIPOSTM, CoolMOSTM, CoolSETTM, CONVERPATHTM, CORECONTROLTM, DAVETM, DUALFALCTM, DUSLICTM, EasyPIMTM, EconoBRIDGETM, EconoDUALTM, EconoPACKTM, EconoPIMTM, E-GOLDTM, EiceDRIVERTM, EUPECTM, ELICTM, EPICTM, FALCTM, FCOSTM, FLEXISLICTM, GEMINAXTM, GOLDMOSTM, HITFETTM, HybridPACKTM, INCATM, ISACTM, ISOFACETM, IsoPACKTM, IWORXTM, M-GOLDTM, MIPAQTM, ModSTACKTM, MUSLICTM, my-dTM, NovalithICTM, OCTALFALCTM, OCTATTM, OmniTuneTM, OmniViaTM, OptiMOSTM, OPTIVERSETM, ORIGATM, PROFETTM, PRO-SILTM, PrimePACKTM, QUADFALCTM, RASICTM, ReverSaveTM, SatRICTM, SCEPTRETM, SCOUTTM, S-GOLDTM, SensoNorTM, SEROCCOTM, SICOFITM, SIEGETTM, SINDRIONTM, SLICTM, SMARTiTM, SmartLEWISTM, SMINTTM, SOCRATESTM, TEMPFETTM, thinQ!TM, TrueNTRYTM, TriCoreTM, TRENCHSTOPTM, VINAXTM, VINETICTM, VIONTICTM, WildPassTM, X-GOLDTM, XMMTM, X-PMUTM, XPOSYSTM, XWAYTM. Other Trademarks AMBATM, ARMTM, MULTI-ICETM, PRIMECELLTM, REALVIEWTM, THUMBTM of ARM Limited, UK. AUTOSARTM is licensed by AUTOSAR development partnership. BluetoothTM of Bluetooth SIG Inc. CAT-iqTM of DECT Forum. COLOSSUSTM, FirstGPSTM of Trimble Navigation Ltd. EMVTM of EMVCo, LLC (Visa Holdings Inc.). EPCOSTM of Epcos AG. FLEXGOTM of Microsoft Corporation. FlexRayTM is licensed by FlexRay Consortium. HYPERTERMINALTM of Hilgraeve Incorporated. IECTM of Commission Electrotechnique Internationale. IrDATM of Infrared Data Association Corporation. ISOTM of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLABTM of MathWorks, Inc. MAXIMTM of Maxim Integrated Products, Inc. MICROTECTM, NUCLEUSTM of Mentor Graphics Corporation. MifareTM of NXP. MIPITM of MIPI Alliance, Inc. MIPSTM of MIPS Technologies, Inc., USA. muRataTM of MURATA MANUFACTURING CO. OmniVisionTM of OmniVision Technologies, Inc. OpenwaveTM Openwave Systems Inc. RED HATTM Red Hat, Inc. RFMDTM RF Micro Devices, Inc. SIRIUSTM of Sirius Sattelite Radio Inc. SOLARISTM of Sun Microsystems, Inc. SPANSIONTM of Spansion LLC Ltd. SymbianTM of Symbian Software Limited. TAIYO YUDENTM of Taiyo Yuden Co. TEAKLITETM of CEVA, Inc. TEKTRONIXTM of Tektronix Inc. TOKOTM of TOKO KABUSHIKI KAISHA TA. UNIXTM of X/Open Company Limited. VERILOGTM, PALLADIUMTM of Cadence Design Systems, Inc. VLYNQTM of Texas Instruments Incorporated. VXWORKSTM, WIND RIVERTM of WIND RIVER SYSTEMS, INC. ZETEXTM of Diodes Zetex Limited.
Last Trademarks Update 2009-10-19
Data Sheet
3
Revision 1.0, 2009-01-20
BFP720
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 2 3 4 5 5.1 5.2 5.3 5.4 6 7 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 13 14 19
Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Data Sheet
4
Revision 1.0, 2009-01-20
BFP720
List of Figures
List of Figures
Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Permissible Pulse Load Ptot_max / Ptot_DC = f (tp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Permissible Pulse Load RthJS = f (tp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BFP720 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Transition Frequency fT = f (IC, VCE) f = 1 GHz, VCE Parameter in V . . . . . . . . . . . . . . . . . . . . . . . Power Gain Gma, Gms, IS21I = f (f) VCE = 3 V, IC = 13 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Matching S11 vs. Frequency VCE = 3 V, IC = 5 mA / 13 mA . . . . . . . . . . . . . . . . . . . . . . . . . . Output Matching S22 vs. Frequency VCE = 3 V, IC = 5 mA / 13 mA. . . . . . . . . . . . . . . . . . . . . . . . . Source Impedance Zopt for NFmin vs. Frequency VCE = 3 V, IC = 5 mA / 13 mA . . . . . . . . . . . . . . . Noise Figure NFmin = f (IC) VCE = 3 V, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (f) VCE = 3 V, ZS = Zop. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Gain Gma, Gms = f (IC) VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Gain Gma, Gms = f (VCE) IC = 13 mA, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . . . . . . Package Outline SOT343 (top / side view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Marking Example (Marking BFP720: R9s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 12 14 19 19 20 20 21 21 22 22 23 25 25 25 25
Data Sheet
5
Revision 1.0, 2009-01-20
BFP720
List of Tables
List of Tables
Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Table 12 Table 13 Table 14 Table 15 Quick Reference DC Characteristics at TA = 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Quick Reference AC Characteristics at TA = 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Maximum Ratings (TA = 25 C unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 DC Characteristics at TA = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics at TA = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 3 V, f = 1500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 AC Characteristics, VCE = 3 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Data Sheet
6
Revision 1.0, 2009-01-20
SiGe:C Heterojunction Wideband RF Bipolar Transistor
BFP720
1
* * * * * * * * * * * *
Features
High performance general purpose wideband LNA transistor 150 GHz fT-Silicon Germanium Carbon technology 3 Enables Best-In-Class performance for wireless applications due to 2 4 high dynamic range 1 Transistor geometry optimized for low-current applications Operation voltage: 1.0 V to 4.0 V Very high gain at high frequencies and low current consumption 26 dB maximum stable gain at 1.9 GHz and only 13 mA 15 dB maximum available gain at 10 GHz and only 13 mA Ultra low noise figure from latest SiGe:C technology 0.7 dB minimum noise figure at 5.5 GHz and 0.95 dB at 10 GHz High linearity OP1dB = +8.5 dBm and OIP3 = +23 dBm at 5.5 GHz and low current consumption of 13 mA Pb-free (RoHS compliant) package
Main features:
Application FM Radio, Mobile TV, RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDARs, Bluetooth, WiFi, Cordless phone, UMTS, WLAN, UWB, LNB Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name Package BFP720 Data Sheet SOT343 1=B 2=E
Pin Configuration 3=C 7 4=E
Marking R9s Revision 1.0, 2009-01-20
BFP720
Product Brief
2
Product Brief
The BFP720 is a wideband Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT) in a plastic 4-pin dual emitter SOT343 package. The device combines very high gain with lowest noise figure at low operating current for use in a wide range of wireless applications. The BFP720 is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Collector design supports operation voltages from 1.0 V to 4.0 V. Table 1 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Collector current Total power dissipation DC current gain Quick Reference DC Characteristics at TA = 25C Symbol Min. Values Typ. 4.7 15 - - 250 Max. - - 25 100 400 V V mA mW 4 13 - - 160 Unit Note / Test Condition
V(BR)CEO V(BR)CBO IC Ptot hFE
IC = 1 mA, IB = 0 mA IE = 0 mA TS 108 C VCE = 3 V, IC = 13 mA
Data Sheet
8
Revision 1.0, 2009-01-20
BFP720
Product Brief
Table 2 Parameter
Quick Reference AC Characteristics at TA = 25C Symbol Min. Values Typ. 45 Max. - - 22 25 - - 20.5 23 - - 0.5 21.5 - OP1dB - 6 22 - - 19 19.5 - - 15 16 - - 0.7 15 - OP1dB - 8.5 23 dBm dB dB dB dBm dB dB GHz dB - - Unit Note / Test Condition
Transition frequency
fT
VCE = 3 V, IC = 13 mA
f = 2.4 GHz
Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Transducer Gain Low Noise Operation Point High Linearity Operation Point Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point
Gms Gms S21 S21 NFmin Gass
IC = 5 mA IC = 13 mA ZS = ZL = 50 IC = 5 mA IC = 13 mA ZS = Zopt IC = 5 mA IC = 5 mA ZS = ZL = 50 IC = 13 mA IC = 13 mA
OIP3
f = 5.5 GHz
Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Transducer Gain Low Noise Operation Point High Linearity Operation Point Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point
Gms Gma S21 S21 NFmin Gass
IC = 5 mA IC = 13 mA ZS = ZL = 50 IC = 5 mA IC = 13 mA ZS = Zopt IC = 5 mA IC = 5 mA ZS = ZL = 50 IC = 13 mA IC = 13 mA
OIP3
Data Sheet
9
Revision 1.0, 2009-01-20
BFP720
Maximum Ratings
3
Maximum Ratings
Table 3 Parameter
Maximum Ratings (TA = 25 C unless otherwise specified) Symbol Min. Values Typ. - - - - - - - - - Max. 4.0 3.5 13 13 1.2 25 2 100 150 150 V V V V mA mA mW C C - - - - - - - - - - - - - - - - -55 -55 Unit Note / Test Condition
Collector-emitter voltage
VCEO VCES VCBO VEBO IC IB
TA = -55 C
Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation
1)
TS 108 C
Operation junction temperature Storage temperature
Ptot TJOp TStg
1) TS measured on the emitter lead at the soldering point of the pcb
Note: Exceeding only one of the above maximum rating limits even for a short moment may cause permanent damage to the device. Even if the device continues to operate, its lifetime may be considerably shortened. Maximum ratings are stress ratings only and do not mean unaffected functional operation and lifetime at others than standard operation conditions.
Data Sheet
10
Revision 1.0, 2009-01-20
BFP720
Thermal Characteristics
4
Thermal Characteristics
Table 4 Parameter
Thermal Resistance Symbol
1)
Value
Unit K/W
Junction - soldering point RthJS 420 1)For calculation of RthJA please refer to Application Note Thermal Resistance
120
100
80 Ptot [m ] W
60
40
20
0 0 50 Ts [C] 100 150
Figure 1
Total Power Dissipation Ptot = f (Ts)
Data Sheet
11
Revision 1.0, 2009-01-20
BFP720
Thermal Characteristics
10
D= 0 D= .005 D= .01 D= .02
Ptot_max / Ptot_DC
D= .05 D= .1 D=0 D= .2 D= .5
D=0.5
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E-01
tp [sec]
Figure 2 Permissible Pulse Load Ptot_max / Ptot_DC = f (tp)
1000
D=0.5 RthJS [K/W]
D= .5 D= .2 D= .1 D= .05 D= .02
D=0
D= .01 D= .005 D= 0
1.E-02
tp [sec]
Figure 3 Data Sheet
Permissible Pulse Load RthJS = f (tp) 12 Revision 1.0, 2009-01-20
1.E+00
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
100
1.E+00
1
BFP720
Electrical Characteristics
5
5.1
Electrical Characteristics
DC Characteristics
Table 5 Parameter
DC Characteristics at TA = 25 C Symbol Min. Values Typ. 4.7 - - - 250 Max. - 30 100 2 400 V A nA A 4 - - - 160 Unit Note / Test Condition
Collector-emitter breakdown voltage Collector-emitter cutoff current Collector-base cutoff current Emitter-base cutoff current DC current gain
V(BR)CEO ICES ICBO IEBO hFE
IC = 1 mA, IB = 0 mA VCE = 13 V, VBE = 0 V VCB = 5 V, IE = 0 mA VEB = 0.5 V, IC = 0 mA IC = 13 mA, VCE = 3 V
pulse measured
5.2
General AC Characteristics
Table 6 Parameter
AC Characteristics at TA = 25 C Symbol Min. Values Typ. 45 0.06 Max. - - GHz pF - - Unit Note / Test Condition
Transition frequency Collector-base capacitance
fT Ccb
IC = 13 mA, VCE = 3 V f = 1 GHz VCB = 3 V, VBE = 0 V f = 1 MHz
emitter grounded
Collector-emitter capacitance
Cce
-
0.35
-
pF
VCE = 3 V, VBE = 0 V f = 1 MHz
base grounded
Emitter-base capacitance
Ceb
-
0.35
-
pF
VEB = 0.5 V, VCB = 0 V f = 1 MHz
collector grounded
Data Sheet
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Revision 1.0, 2009-01-20
BFP720
Electrical Characteristics
5.3
Frequency Dependent AC Characteristics
Measurement setup is a testfixture with Bias T's in a 50 system, TA = 25 C
VC Top View
Bias -T
OUT E C
VB B
(Pin 1)
E
Bias-T
IN
Figure 4 Table 7 Parameter
BFP720 Testing Circuit AC Characteristics, VCE = 3 V, f = 150 MHz Symbol Min. - Values Typ. 34 37.5 - - 23 29.5 - - 0.4 28.5 - OP1dB - 6 22 dBm dB dB Max. - dB Unit Note / Test Condition
Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Transducer Gain Low Noise Operation Point High Linearity Operation Point Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point
Gms Gms S21 S21 NFmin Gass
IC = 5 mA IC = 13 mA ZS = ZL = 50 IC = 5 mA IC = 13 mA ZS = Zopt IC = 5 mA IC = 5 mA ZS = ZL = 50 IC = 13 mA IC = 13 mA
OIP3
Data Sheet
14
Revision 1.0, 2009-01-20
BFP720
Electrical Characteristics
Table 8 Parameter
AC Characteristics, VCE = 3 V, f = 450 MHz Symbol Min. - Values Typ. 29 32.5 - - 23 28.5 - - 0.4 28 - - 5.5 21.5 dBm dB dB Max. - dB Unit Note / Test Condition
Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Transducer Gain Low Noise Operation Point High Linearity Operation Point Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point Table 9 Parameter Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Transducer Gain Low Noise Operation Point High Linearity Operation Point Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point
Gms Gms S21 S21 NFmin Gass
OP1dB
IC = 5 mA IC = 13 mA ZS = ZL = 50 IC = 5 mA IC = 13 mA ZS = Zopt IC = 5 mA IC = 5 mA ZS = ZL = 50 IC = 13 mA IC = 13 mA
OIP3
AC Characteristics, VCE = 3 V, f = 900 MHz Symbol Min. - Values Typ. 26.5 29.5 - - 22.5 27.5 - - 0.4 26 - - 5.5 21 dBm dB dB Max. - dB Unit Note / Test Condition
Gms Gms S21 S21 NFmin Gass
OP1dB
IC = 5 mA IC = 13 mA ZS = ZL = 50 IC = 5 mA IC = 13 mA ZS = Zopt IC = 5 mA IC = 5 mA ZS = ZL = 50 IC = 13 mA IC = 13 mA
OIP3
Data Sheet
15
Revision 1.0, 2009-01-20
BFP720
Electrical Characteristics
Table 10 Parameter
AC Characteristics, VCE = 3 V, f = 1500 MHz Symbol Min. - Values Typ. 24 27.5 - - 22 25.5 - - 0.45 24 - - 6 21.5 dBm dB dB Max. - dB Unit Note / Test Condition
Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Transducer Gain Low Noise Operation Point High Linearity Operation Point Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point Table 11 Parameter Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Transducer Gain Low Noise Operation Point High Linearity Operation Point Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point
Gms Gms S21 S21 NFmin Gass OP1dB OIP3
IC = 5 mA IC = 13 mA ZS = ZL = 50 IC = 5 mA IC = 13 mA ZS = Zopt IC = 5 mA IC = 5 mA ZS = ZL = 50 IC = 13 mA IC = 13 mA
AC Characteristics, VCE = 3 V, f = 1.9 GHz Symbol Min. - Values Typ. 23 26 - - 21.5 24.5 - - 0.45 23 - - 7 22 dBm dB dB Max. - dB Unit Note / Test Condition
Gms Gms S21 S21 NFmin Gass
OP1dB
IC = 5 mA IC = 13 mA ZS = ZL = 50 IC = 5 mA IC = 13 mA ZS = Zopt IC = 5 mA IC = 5 mA ZS = ZL = 50 IC = 13 mA IC = 13 mA
OIP3
Data Sheet
16
Revision 1.0, 2009-01-20
BFP720
Electrical Characteristics
Table 12 Parameter
AC Characteristics, VCE = 3 V, f = 2.4 GHz Symbol Min. - Values Typ. 22 25 - - 20.5 23 - - 0.5 21.5 - - 6 22 dBm dB dB Max. - dB Unit Note / Test Condition
Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Transducer Gain Low Noise Operation Point High Linearity Operation Point Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point Table 13 Parameter Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Transducer Gain Low Noise Operation Point High Linearity Operation Point Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point
Gms Gms S21 S21 NFmin Gass OP1dB OIP3
IC = 5 mA IC = 13 mA ZS = ZL = 50 IC = 5 mA IC = 13 mA ZS = Zopt IC = 5 mA IC = 5 mA ZS = ZL = 50 IC = 13 mA IC = 13 mA
AC Characteristics, VCE = 3 V, f = 3.5 GHz Symbol Min. - Values Typ. 20.5 23.5 - - 18.5 20 - - 0.55 19 - - 7.5 22.5 dBm dB dB Max. - dB Unit Note / Test Condition
Gms Gms S21 S21 NFmin Gass OP1dB OIP3
IC = 5 mA IC = 13 mA ZS = ZL = 50 IC = 5 mA IC = 13 mA ZS = Zopt IC = 5 mA IC = 5 mA ZS = ZL = 50 IC = 13 mA IC = 13 mA
Data Sheet
17
Revision 1.0, 2009-01-20
BFP720
Electrical Characteristics
Table 14 Parameter
AC Characteristics, VCE = 3 V, f = 5.5 GHz Symbol Min. - Values Typ. 19 19.5 - - 15 16 - - 0.7 15 - - 8.5 23 dBm dB dB Max. - dB Unit Note / Test Condition
Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Transducer Gain Low Noise Operation Point High Linearity Operation Point Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point Table 15 Parameter Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Transducer Gain Low Noise Operation Point High Linearity Operation Point Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point Notes
Gms Gma S21 S21 NFmin Gass OP1dB OIP3
IC = 5 mA IC = 13 mA ZS = ZL = 50 IC = 5 mA IC = 13 mA ZS = Zopt IC = 5 mA IC = 5 mA ZS = ZL = 50 IC = 13 mA IC = 13 mA
AC Characteristics, VCE = 3 V, f = 10 GHz Symbol Min. - Values Typ. 13.5 15 - - 9 10 - - 0.95 10.5 - - 8 19.5 dBm dB dB Max. - dB Unit Note / Test Condition
Gma Gma S21 S21 NFmin Gass OP1dB OIP3
IC = 5 mA IC = 13 mA ZS = ZL = 50 IC = 5 mA IC = 13 mA ZS = Zopt IC = 5 mA IC = 5 mA ZS = ZL = 50 IC = 13 mA IC = 13 mA
1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1 2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all measured results
Data Sheet
18
Revision 1.0, 2009-01-20
BFP720
Electrical Characteristics
5.4
Characteristic Curves
50
45
3V
40 2V
35
30 fT [GHz]
25
20
15
10 1V 5 0.5 V 0 1 10 Ic [mA] 100
Figure 5
Transition Frequency fT = f (IC, VCE) f = 1 GHz, VCE Parameter in V
42
39
36
33
30
Gms
27
G [dB]
24
21
18
G |S |2
21
ma
15
12
9
6 0 1 2 3 4 5 6 7 8 9 10
f [GHz]
Figure 6 Data Sheet
Power Gain Gma, Gms, IS21I = f (f) VCE = 3 V, IC = 13 mA 19 Revision 1.0, 2009-01-20
BFP720
Electrical Characteristics
6 0.
0.8
Swp Max 10GHz
10 GHz
1.0
10 GHz 9 GHz 9 GHz
2. 0 0 3.
2 GHz
.4 -0
3 GHz
1 GHz
1 GHz 2 GHz
-0 .6
-0.8
-1.0
.0 -2
Figure 7
Input Matching S11 vs. Frequency VCE = 3 V, IC = 5 mA / 13 mA
Swp Max 10GHz
6 0.
0.8
1.0
2. 0
0 3.
S22 @3V, 5mA
10 GHz
S22 @3V, 13mA
0.2
0.4
0.6
0.8
1.0
2.0
3.0
2 GHz 4 GHz 3 GHz
1 GHz
.4 -0
-0 .6
-0.8
-1.0
.0 -2
2 GHz
Figure 8
Output Matching S22 vs. Frequency VCE = 3 V, IC = 5 mA / 13 mA
Data Sheet
20
4. .0 -5. 0 0
-0.
2
5 GHz
4 GHz 3 GHz
1 GHz
-1 -10.0
8 GHz 7 GHz 6 GHz
8 GHz 7 GHz 6 GHz 5 GHz
4.0 5.0
0
10.0
-3 .0 0
Swp Min 0GHz
9 GHz
9 GHz
-4 4. 0 0 -. -5. 0
-0.
2
4 GHz
0 4. 5.0
10.0
-10.0 0
3 GHz
10.0
-3 3. 0
Swp Min 0GHz
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0 5.0
0
0. 4
8 GHz 7 GHz 6 GHz 5 GHz
8 GHz 7 GHz
6 GHz 5 GHz 4 GHz
S11 @3V, 5mA S11 @3V, 13mA
0 4. 5.0
10.0
0. 4 4
0 0.2
0.2 .
Revision 1.0, 2009-01-20
BFP720
Electrical Characteristics
6 0.
0.8
1.0
Swp Max 10GHz
2. 0
2.4GHz 5.5GHz 1.9GHz
0.4
2.0
0.8 1.0
5.5GHz
1.9GHz 0.45GHz
3.0 4.0 5.0
.0 -2
0.2
0.6
0
10GHz
.4 -0
-0 .6
-0.8
-1.0
Figure 9
Source Impedance Zopt for NFmin vs. Frequency VCE = 3 V, IC = 5 mA / 13 mA
2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1
F [dB] f = 10GHz f = 5.5GHz f = 2.4GHz f = 1.9GHz f = 0.45GHz
1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8
c
10
I [mA]
12
14
16
18
Figure 10
Noise Figure NFmin = f (IC) VCE = 3 V, ZS = Zopt
Data Sheet
21
-4 4 . -. -5. 0 0
: Ic = 13mA : Ic = 13mA 0.2 : Ic = 5mA : Ic = 5mA
-. -10.0
10.0
20
-3 -3 . .0
0. 4
0 3. 0 4. 5.0
0.2 .
2.4GHz
10.0
Swp Min 0.45GHz
Revision 1.0, 2009-01-20
BFP720
Electrical Characteristics
1.4 1.3 1.2 1.1 1 0.9 0.8
F [dB]
0.7 0.6 0.5
IC = 13mA
0.4
I = 5.0mA C
0.3 0.2 0.1 0 0 1 2 3 4 5
f [GHz]
6
7
8
9
10
Figure 11
Noise Figure NFmin = f (f) VCE = 3 V, ZS = Zop
42 40 38 36 34 32
0.15GHz
0.45GHz
0.90GHz
30 28
G [dB]
26 24 22 20
1.50GHz 1.90GHz 2.40GHz 3.50GHz
5.50GHz
18 16 14 12 10 0 5 10 15 20 25 30
10.00GHz
IC [mA]
Figure 12
Power Gain Gma, Gms = f (IC) VCE = 3 V, f = Parameter in GHz
Data Sheet
22
Revision 1.0, 2009-01-20
BFP720
Electrical Characteristics
40 38 36 34
0.15GHz
0.45GHz
32 30 28 26
0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz
G [dB]
24 22 20 18 16
5.50GHz
10.00GHz
14 12 10 8 6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VCE [V]
Figure 13
Power Gain Gma, Gms = f (VCE) IC = 13 mA, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves.
Data Sheet
23
Revision 1.0, 2009-01-20
BFP720
Simulation Data
6
Simulation Data
For SPICE-model as well as for S-parameters including noise parameters please refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. The simulation data have been generated and verified using typical devices. The BFP720 nonlinear SPICE-model reflects the typical DC- and RF-device performance with high accuracy.
Data Sheet
24
Revision 1.0, 2009-01-20
BFP720
Package Information
7
Package Information
0.9 0.1 2 0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M
+0.1 0.6 -0.05
0.1 MAX. 0.1 A
2
0.1 MIN.
0.15 -0.05 0.2 M A
SOT343-PO V08
+0.1
Figure 14
Package Outline SOT343 (top / side view)
0.6
0.8
1.15 0.9
SOT343-FP V08
Figure 15
Footprint
Figure 16
Marking Example (Marking BFP720: R9s)
4 0.2
Pin 1
2.15
2.3
8
1.6
1.1
SOT323-TP V02
Figure 17
Tape Dimensions
Data Sheet
25
1.25 0.1
2.1 0.1
Revision 1.0, 2009-01-20
www.infineon.com
Published by Infineon Technologies AG

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